High peak power and InGaAs/AlAs(Sb) quantum cascade lasers operating up to 400 K JP Commin, DG Revin, SY Zhang, AB Krysa, K Kennedy, JW Cockburn Applied Physics Letters 97 (3), 031108, 2010 | 49 | 2010 |
Optical properties of multiple quantum well structure by using a high-temperature AlN buffer on sapphire substrate J Bai, T Wang, P Comming, PJ Parbrook, JPR David, AG Cullis Journal of applied physics 99 (2), 023513, 2006 | 35 | 2006 |
Room-temperature GaAs/AlGaAs quantum cascade lasers grown by metal–organic vapor phase epitaxy AB Krysa, DG Revin, JP Commin, CN Atkins, K Kennedy, Y Qiu, T Walther, ... IEEE Photonics Technology Letters 23 (12), 774-776, 2011 | 22 | 2011 |
InP-based midinfrared quantum cascade lasers for wavelengths below 4 μm DG Revin, JP Commin, SY Zhang, AB Krysa, K Kennedy, JW Cockburn IEEE Journal of Selected Topics in Quantum Electronics 17 (5), 1417-1425, 2011 | 21 | 2011 |
High performance, high temperature InGaAs/AlAs(Sb) quantum cascade lasers JP Commin, DG Revin, SY Zhang, AB Krysa, JW Cockburn Applied Physics Letters 95 (11), 111113, 2009 | 21 | 2009 |
Low threshold room temperature GaAs/AlGaAs quantum cascade laser with InAlP waveguide CN Atkins, AB Krysa, DG Revin, K Kennedy, JP Commin, JW Cockburn Electronics letters 47 (21), 1193-1194, 2011 | 10 | 2011 |
Room temperature λ~ 3.3 μm InP-based inGaAs/AIAs (Sb) quantum cascade lasers SY Zhang, DG Revin, JP Commin, K Kennedy, AB Krysa, JW Cockburn Electronics letters 46 (6), 439-440, 2010 | 8 | 2010 |
room temperature InGaAs/AlAs(Sb) quantum cascade lasers with third order distributed feedback grating JP Commin, K Kennedy, DG Revin, SY Zhang, AB Krysa, JW Cockburn Applied Physics Letters 97 (11), 111113, 2010 | 7 | 2010 |
Next generation 9xx/10xx nm high power laser diode bars for multi-kilowatt industrial applications P Commin, R Todt, M Krejci, R Bättig, R Brunner, N Lichtenstein High-Power Diode Laser Technology and Applications XI 8605, 86050Y, 2013 | 4 | 2013 |
High-Peak-Power Room-Temperaturem InGaAs–AlAs(Sb) Quantum Cascade Lasers DG Revin, S Zhang, JP Commin, K Kennedy, AB Krysa, JW Cockburn IEEE Photonics Technology Letters 22 (11), 757-759, 2010 | 4 | 2010 |
Single grating period quantum cascade laser array with broad wavelength tuning range K Kennedy, DG Revin, JP Commin, AB Krysa, MP Semtsiv, ... Electronics Letters 44 (22), 1306-1307, 2008 | 4 | 2008 |
Room temperature InGaAs-AlAsSb quantum cascade lasers operating in 3–4 µm range DG Revin, SY Zhang, JP Commin, JW Cockburn, K Kennedy, AB Krysa, ... Conference on Lasers and Electro-Optics, CThAA5, 2009 | 3 | 2009 |
Recent progress in short wavelength quantum cascade lasers DG Revin, JP Commin, JW Cockburn, SY Zhang, K Kennedy, AB Krysa, ... 2011 IEEE Photonics Society Summer Topical Meeting Series, 57-58, 2011 | 2 | 2011 |
High temperature λ∼ 4 µm In0. 7Ga0. 3As/In0. 34Al0. 66As quantum cascade lasers grown by MOVPE DG Revin, K Kennedy, JP Commin, Y Qiu, T Walther, JW Cockburn, ... Electronics Letters 47 (9), 559-561, 2011 | 2 | 2011 |
Probing diagonal laser transitions in InGaAs/AlInAs/InP quantum cascade lasers MR Soulby, DG Revin, JP Commin, AB Krysa, JS Roberts, JW Cockburn Journal of Applied Physics 106 (12), 123106, 2009 | 2 | 2009 |
High performance short wavelength InP-based quantum cascade lasers DG Revin, JP Commin, SY Zhang, AB Krysa, K Kennedy, JW Cockburn Novel In-Plane Semiconductor Lasers IX 7616, 761612, 2010 | 1 | 2010 |
Semiconductor device F Mohn, P Commin US Patent 10,192,800, 2019 | | 2019 |
Thyristor with improved plasma spreading M Bellini, J Vobecky, P Commin US Patent 10,170,557, 2019 | | 2019 |
Room temperature GaAs/AlGaAs quantum cascade lasers with InGaP and InAlP waveguides DG Revin, CN Atkins, JP Commin, JW Cockburn, Y Qiu, T Walther, ... CLEO: Science and Innovations, CTuP5, 2011 | | 2011 |
Short wavelength InP based quantum cascade lasers DG Revin, JP Commin, JW Cockburn, SY Zhang, K Kennedy, AB Krysa, ... Conference on Lasers and Electro-Optics, CTuE1, 2010 | | 2010 |