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Hongsik Jeong
Hongsik Jeong
Professor of Material Science and Engineering, Ulsan National Institute of Science and Technology
Bestätigte E-Mail-Adresse bei mail.tsinghua.edu.cn
Titel
Zitiert von
Zitiert von
Jahr
A 90 nm 1.8 V 512 Mb diode-switch PRAM with 266 MB/s read throughput
KJ Lee, BH Cho, WY Cho, S Kang, BG Choi, HR Oh, CS Lee, HJ Kim, ...
IEEE Journal of Solid-State Circuits 43 (1), 150-162, 2008
3662008
Full integration and reliability evaluation of phase-change ram based on 0.24/spl mu/m-cmos technologies
YN Hwang, JS Hong, SH Lee, SJ Ahn, GT Jeong, GH Koh, JH Oh, HJ Kim, ...
2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2003
3462003
Highly reliable 50nm contact cell technology for 256Mb PRAM
SJ Ahn, YN Hwang, YJ Song, SH Lee, SY Lee, JH Park, CW Jeong, ...
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 98-99, 2005
3312005
Highly manufacturable high density phase change memory of 64Mb and beyond
SJ Ahn, YJ Song, CW Jeong, JM Shin, Y Fai, YN Hwang, SH Lee, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
3272004
Full integration of highly manufacturable 512Mb PRAM based on 90nm technology
JH Oh, JH Park, YS Lim, HS Lim, YT Oh, JS Kim, JM Shin, YJ Song, ...
2006 International Electron Devices Meeting, 1-4, 2006
2982006
A 0.1- 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation
S Kang, WY Cho, BH Cho, KJ Lee, CS Lee, HR Oh, BG Choi, Q Wang, ...
IEEE Journal of Solid-State Circuits 42 (1), 210-218, 2006
2442006
A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)
WY Cho, BH Cho, BG Choi, HR Oh, S Kang, KS Kim, KH Kim, DE Kim, ...
IEEE Journal of Solid-State Circuits 40 (1), 293-300, 2005
2422005
Memory device employing NVRAM and flash memory cells
BG Jeon, BJ Min, HS Jeong
US Patent 7,916,538, 2011
1612011
Enhanced write performance of a 64-Mb phase-change random access memory
HR Oh, B Cho, WY Cho, S Kang, B Choi, H Kim, K Kim, D Kim, C Kwak, ...
IEEE Journal of Solid-State Circuits 41 (1), 122-126, 2005
1462005
Writing current reduction for high-density phase-change RAM
YN Hwang, SH Lee, SJ Ahn, SY Lee, KC Ryoo, HS Hong, HC Koo, ...
IEEE International Electron Devices Meeting 2003, 37.1. 1-37.1. 4, 2003
1452003
Full integration and cell characteristics for 64Mb nonvolatile PRAM
SH Lee, YN Hwang, SY Lee, KC Ryoo, SJ Ahn, HC Koo, CW Jeong, ...
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 20-21, 2004
1412004
Two-bit cell operation in diode-switch phase change memory cells with 90nm technology
DH Kang, JH Lee, JH Kong, D Ha, J Yu, CY Um, JH Park, F Yeung, ...
2008 Symposium on VLSI Technology, 98-99, 2008
1242008
Phase-change behavior of stoichiometric Ge2Sb2Te5 in phase-change random access memory
JB Park, GS Park, HS Baik, JH Lee, H Jeong, K Kim
Journal of the electrochemical society 154 (3), H139, 2007
1242007
Highly reliable 256Mb PRAM with advanced ring contact technology and novel encapsulating technology
YJ Song, KC Ryoo, YN Hwang, CW Jeong, DW Lim, SS Park, JI Kim, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 118-119, 2006
1232006
Effect of lattice contraction on the Raman shifts of CdSe quantum dots in glass matrices
YN Hwang, S Shin, HL Park, SH Park, U Kim, HS Jeong, E Shin, D Kim
Physical Review B 54 (21), 15120, 1996
1111996
Semiconductor device having multilayer interconnection structure and manufacturing method thereof
W Yang, K Kim, HS Jeong
US Patent 6,836,019, 2004
942004
Ge nitride formation in N-doped amorphous
MC Jung, YM Lee, HD Kim, MG Kim, HJ Shin, KH Kim, SA Song, ...
Applied Physics Letters 91 (8), 083514, 2007
842007
Changes in the electronic structures and optical band gap of and N-doped during phase transition
YK Kim, K Jeong, MH Cho, UK Hwang, HS Jeong, K Kim
Applied physics letters 90 (17), 171920, 2007
802007
A 0.24-μm 2.0-V 1T1MTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme
G Jeong, W Cho, S Ahn, H Jeong, G Koh, Y Hwang, K Kim
IEEE Journal of solid-state circuits 38 (11), 1906-1910, 2003
702003
Ge2Sb2Te5 confined structures and integration of 64 Mb phase-change random access memory
F Yeung, SJ Ahn, YN Hwang, CW Jeong, YJ Song, SY Lee, SH Lee, ...
Japanese Journal of Applied Physics 44 (4S), 2691, 2005
672005
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