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Manasa Kaniselvan
Manasa Kaniselvan
Verified email at iis.ee.ethz.ch - Homepage
Title
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Cited by
Year
A Wafer‐Scale Nanoporous 2D Active Pixel Image Sensor Matrix with High Uniformity, High Sensitivity, and Rapid Switching
H Park, A Sen, M Kaniselvan, AA AlMutairi, A Bala, LP Lee, Y Yoon, S Kim
Advanced Materials 35 (14), 2210715, 2023
222023
Ultrasensitive Multilayer MoS2‐Based Photodetector with Permanently Grounded Gate Effect
M Naqi, M Kaniselvan, S Choo, G Han, S Kang, J Kim, Y Yoon, S Kim
Advanced Electronic Materials 6 (4), 1901256, 2020
162020
Photoresponse of MoSe2 Transistors: A Fully Numerical Quantum Transport Simulation Study
G Han, M Kaniselvan, Y Yoon
ACS Applied Electronic Materials 2 (11), 3765-3772, 2020
62020
An atomistic model of field-induced resistive switching in valence change memory
M Kaniselvan, M Luisier, M Mladenovic
Acs Nano 17 (9), 8281-8292, 2023
52023
Strain-tuning PtSe2 for high ON-current lateral tunnel field-effect transistors
M Kaniselvan, Y Yoon
Applied Physics Letters 119 (7), 2021
42021
An atomistic modelling framework for valence change memory cells
M Kaniselvan, M Luisier, M Mladenović
Solid-State Electronics, 108506, 2022
32022
A comparative study on 2D materials with native high-κ oxides for sub-10 nm transistors
M Sritharan, RKA Bennett, M Kaniselvan, Y Yoon
Materials Today Electronics 8, 100096, 2024
2024
Single Neuromorphic Memristor closely Emulates Multiple Synaptic Mechanisms for Energy Efficient Neural Networks
C Weilenmann, A Ziogas, T Zellweger, K Portner, M Mladenović, ...
arXiv preprint arXiv:2402.16628, 2024
2024
(Invited) Advanced Modeling of Nanoscale Devices
M Luisier, J Aeschlimann, J Backman, J Cao, M Kaniselvan, Y Lee, ...
Electrochemical Society Meeting Abstracts 243, 1849-1849, 2023
2023
Dataset for the paper" An Atomistic Model of Field-Induced Resistive Switching in Valence Change Memory"
M Luisier, M Mladenović, M Kaniselvan
2023
Mitigating Tunneling Leakage in Ultrascaled HfS2 pMOS Devices With Uniaxial Strain
M Kaniselvan, M Sritharan, Y Yoon
IEEE Electron Device Letters 43 (7), 1133-1136, 2022
2022
Engineering the Performance of 2D Transition Metal Dichalcogenide Nanotransistors through Quantum Transport Simulations
M Kaniselvan
University of Waterloo, 2021
2021
Termination-Dependence of Resistive Switching in SrTiO3-Based Valence Change Memory
M Mladenović
A Real-Time Non-Invasive Sensor for Monitoring Laser-Induced Temperature in Medical Applications
JLM Chen, M Kaniselvan, C Seelemann, D Smith
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