V J B Torres
V J B Torres
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Allergic contact dermatitis in children
S Goncalo, M Gonçalo, A Azenha, MA Barros, A Sousa Bastos, ...
Contact Dermatitis 26 (2), 112-115, 1992
Electrical activity of chalcogen-hydrogen defects in silicon
J Coutinho, VJB Torres, R Jones, PR Briddon
Physical Review B 67 (3), 035205, 2003
Trivacancy and trivacancy-oxygen complexes in silicon: Experiments and ab initio modeling
VP Markevich, AR Peaker, SB Lastovskii, LI Murin, J Coutinho, VJB Torres, ...
Physical Review B 80 (23), 235207, 2009
Electronic structure and Jahn–Teller instabilities in a single vacancy in Ge
J Coutinho, R Jones, VJB Torres, M Barroso, S Öberg, PR Briddon
Journal of Physics: Condensed Matter 17 (48), L521, 2005
Donor-vacancy complexes in Ge: Cluster and supercell calculations
J Coutinho, S Öberg, VJB Torres, M Barroso, R Jones, PR Briddon
Physical Review B 73 (23), 235213, 2006
Dynamic properties of interstitial carbon and carbon-carbon pair defects in silicon
P Leary, R Jones, S Öberg, VJB Torres
Physical Review B 55 (4), 2188, 1997
Re-examination of the SiGe Raman spectra: Percolation/one-dimensional-cluster scheme and ab initio calculations
O Pagès, J Souhabi, VJB Torres, AV Postnikov, KC Rustagi
Physical Review B 86 (4), 045201, 2012
Formation energy and migration barrier of a Ge vacancy from ab initio studies
HM Pinto, J Coutinho, VJB Torres, S Öberg, PR Briddon
Materials science in semiconductor processing 9 (4-5), 498-502, 2006
Structure and electronic properties of trivacancy and trivacancy‐oxygen complexes in silicon
VP Markevich, AR Peaker, B Hamilton, SB Lastovskii, LI Murin, J Coutinho, ...
physica status solidi (a) 208 (3), 568-571, 2011
Structure and properties of vacancy-oxygen complexes in alloys
VP Markevich, AR Peaker, J Coutinho, R Jones, VJB Torres, S Öberg, ...
Physical Review B 69 (12), 125218, 2004
Double negatively charged carbon vacancy at the h-and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study
I Capan, T Brodar, Ž Pastuović, R Siegele, T Ohshima, S Sato, T Makino, ...
Journal of applied physics 123 (16), 161597, 2018
Theory of the carbon vacancy in -SiC: Crystal field and pseudo-Jahn-Teller effects
J Coutinho, VJB Torres, K Demmouche, S Öberg
Physical Review B 96 (17), 174105, 2017
Calculation of deep carrier traps in a divacancy in germanium crystals
J Coutinho, VJB Torres, R Jones, A Carvalho, S Öberg, PR Briddon
Applied physics letters 88 (9), 091919, 2006
Formation of interstitial carbon–interstitial oxygen complexes in silicon: Local vibrational mode spectroscopy and density functional theory
LI Khirunenko, MG Sosnin, YV Pomozov, LI Murin, VP Markevich, ...
Physical Review B 78 (15), 155203, 2008
Calculation of deep states in SiGe alloys: Interstitial carbon-oxygen complexes
A Balsas, J Coutinho, VJB Torres, PR Briddon, M Barroso
Physical Review B 70 (8), 085201, 2004
Electronic structure of divacancy–hydrogen complexes in silicon
J Coutinho, VJB Torres, R Jones, S Öberg, PR Briddon
Journal of Physics: Condensed Matter 15 (39), S2809, 2003
Early stage donor-vacancy clusters in germanium
J Coutinho, VJB Torres, S Öberg, A Carvalho, C Janke, R Jones, ...
Journal of Materials Science: Materials in Electronics 18 (7), 769-773, 2007
Ab initio calculations of the structure and dynamics of C60 and C3− 60
R Jones, CD Latham, MI Heggie, VJB Torres, S Öberg, SK Estreicher
Philosophical magazine letters 65 (6), 291-298, 1992
Silicon carbide diodes for neutron detection
J Coutinho, VJB Torres, I Capan, T Brodar, Z Ereš, R Bernat, V Radulović, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2021
Ab initio study of CsI and its surface
RM Ribeiro, J Coutinho, VJB Torres, R Jones, SJ Sque, S Öberg, ...
Physical Review B 74 (3), 035430, 2006
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