| Allergic contact dermatitis in children S Goncalo, M Gonçalo, A Azenha, MA Barros, A Sousa Bastos, ... Contact Dermatitis 26 (2), 112-115, 1992 | 104 | 1992 |
| Electrical activity of chalcogen-hydrogen defects in silicon J Coutinho, VJB Torres, R Jones, PR Briddon Physical Review B 67 (3), 035205, 2003 | 97 | 2003 |
| Trivacancy and trivacancy-oxygen complexes in silicon: Experiments and ab initio modeling VP Markevich, AR Peaker, SB Lastovskii, LI Murin, J Coutinho, VJB Torres, ... Physical Review B 80 (23), 235207, 2009 | 85 | 2009 |
| Electronic structure and Jahn–Teller instabilities in a single vacancy in Ge J Coutinho, R Jones, VJB Torres, M Barroso, S Öberg, PR Briddon Journal of Physics: Condensed Matter 17 (48), L521, 2005 | 72 | 2005 |
| Re-examination of the SiGe Raman spectra: Percolation/one-dimensional-cluster scheme and ab initio calculations O Pagès, J Souhabi, VJB Torres, AV Postnikov, KC Rustagi Physical Review B 86 (4), 045201, 2012 | 71 | 2012 |
| Donor-vacancy complexes in Ge: Cluster and supercell calculations J Coutinho, S Öberg, VJB Torres, M Barroso, R Jones, PR Briddon Physical Review B 73 (23), 235213, 2006 | 71 | 2006 |
| Dynamic properties of interstitial carbon and carbon-carbon pair defects in silicon P Leary, R Jones, S Öberg, VJB Torres Physical Review B 55 (4), 2188, 1997 | 69 | 1997 |
| Formation energy and migration barrier of a Ge vacancy from ab initio studies HM Pinto, J Coutinho, VJB Torres, S Öberg, PR Briddon Materials science in semiconductor processing 9 (4-5), 498-502, 2006 | 56 | 2006 |
| Structure and electronic properties of trivacancy and trivacancy‐oxygen complexes in silicon VP Markevich, AR Peaker, B Hamilton, SB Lastovskii, LI Murin, J Coutinho, ... physica status solidi (a) 208 (3), 568-571, 2011 | 52 | 2011 |
| Double negatively charged carbon vacancy at the h-and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study I Capan, T Brodar, Ž Pastuović, R Siegele, T Ohshima, S Sato, T Makino, ... Journal of applied physics 123 (16), 2018 | 50 | 2018 |
| Structure and properties of vacancy-oxygen complexes in alloys VP Markevich, AR Peaker, J Coutinho, R Jones, VJB Torres, S Öberg, ... Physical Review B 69 (12), 125218, 2004 | 40 | 2004 |
| Silicon carbide diodes for neutron detection J Coutinho, VJB Torres, I Capan, T Brodar, Z Ereš, R Bernat, V Radulović, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2021 | 39 | 2021 |
| Theory of the carbon vacancy in -SiC: Crystal field and pseudo-Jahn-Teller effects J Coutinho, VJB Torres, K Demmouche, S Öberg Physical Review B 96 (17), 174105, 2017 | 37 | 2017 |
| Calculation of deep carrier traps in a divacancy in germanium crystals J Coutinho, VJB Torres, R Jones, A Carvalho, S Öberg, PR Briddon Applied physics letters 88 (9), 2006 | 30 | 2006 |
| Formation of interstitial carbon–interstitial oxygen complexes in silicon: Local vibrational mode spectroscopy and density functional theory LI Khirunenko, MG Sosnin, YV Pomozov, LI Murin, VP Markevich, ... Physical Review B 78 (15), 155203, 2008 | 27 | 2008 |
| Electronic structure of divacancy–hydrogen complexes in silicon J Coutinho, VJB Torres, R Jones, S Öberg, PR Briddon Journal of Physics: Condensed Matter 15 (39), S2809, 2003 | 26 | 2003 |
| Calculation of deep states in SiGe alloys: Interstitial carbon-oxygen complexes A Balsas, J Coutinho, VJB Torres, PR Briddon, M Barroso Physical Review B 70 (8), 085201, 2004 | 25 | 2004 |
| Early stage donor-vacancy clusters in germanium J Coutinho, VJB Torres, S Öberg, A Carvalho, C Janke, R Jones, ... Journal of Materials Science: Materials in Electronics 18, 769-773, 2007 | 22 | 2007 |
| Ab initio calculations of the structure and dynamics of C60 and C3− 60 R Jones, CD Latham, MI Heggie, VJB Torres, S Öberg, SK Estreicher Philosophical magazine letters 65 (6), 291-298, 1992 | 21 | 1992 |
| Ab initio study of CsI and its surface RM Ribeiro, J Coutinho, VJB Torres, R Jones, SJ Sque, S Öberg, ... Physical Review B 74 (3), 035430, 2006 | 18 | 2006 |
