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Yabin Chen (陈亚彬)
Yabin Chen (陈亚彬)
Other namesYB Chen, Chen Ya-bin
Verified email at bit.edu.cn
Title
Cited by
Cited by
Year
Improving gas sensing properties of graphene by introducing dopants and defects: a first-principles study
YH Zhang, YB Chen, KG Zhou, CH Liu, J Zeng, HL Zhang, Y Peng
Nanotechnology 20 (18), 185504, 2009
13652009
Doping against the native propensity of MoS2: degenerate hole doping by cation substitution
J Suh, TE Park, DY Lin, D Fu, J Park, HJ Jung, Y Chen, C Ko, C Jang, ...
Nano letters 14 (12), 6976-6982, 2014
7142014
Anisotropic in-plane thermal conductivity of black phosphorus nanoribbons at temperatures higher than 100 K
S Lee, F Yang, J Suh, S Yang, Y Lee, G Li, H Sung Choe, A Suslu, ...
Nature communications 6 (1), 1-7, 2015
4002015
Nitrogen-doped graphenes as efficient electrocatalysts for the selective reduction of carbon dioxide to formate in aqueous solution
H Wang, Y Chen, X Hou, C Ma, T Tan
Green Chemistry 18 (11), 3250-3256, 2016
2742016
Graphene‐Veiled Gold Substrate for Surface‐Enhanced Raman Spectroscopy
W Xu, J Xiao, Y Chen, Y Chen, X Ling, J Zhang
Advanced Materials 25 (6), 928-933, 2013
2512013
Black Arsenic: A Layered Semiconductor with Extreme In‐Plane Anisotropy
Y Chen, C Chen, R Kealhofer, H Liu, Z Yuan, L Jiang, J Suh, J Park, C Ko, ...
Advanced Materials 30 (30), 1800754, 2018
2112018
Thickness‐Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic
M Zhong, Q Xia, L Pan, Y Liu, Y Chen, HX Deng, J Li, Z Wei
Advanced Functional Materials 28 (43), 1802581, 2018
1582018
Investigating the mechanism of hysteresis effect in graphene electrical field device fabricated on SiO2 substrates using Raman spectroscopy
H Xu, Y Chen, J Zhang, H Zhang
Small 8 (18), 2833-2840, 2012
1582012
Ferroelectrically gated atomically thin transition-metal dichalcogenides as nonvolatile memory
C Ko, Y Lee, Y Chen, J Suh, D Fu, A Suslu, S Lee, JD Clarkson, HS Choe, ...
Adv. Mater 28 (15), 2923-2930, 2016
1532016
Reconfiguring crystal and electronic structures of MoS2 by substitutional doping
J Suh, TL Tan, W Zhao, J Park, DY Lin, TE Park, J Kim, C Jin, N Saigal, ...
Nature communications 9 (1), 199, 2018
1522018
Site selective doping of ultrathin metal dichalcogenides by laser-assisted reaction
E Kim, C Ko, K Kim, Y Chen, J Suh, SG Ryu, K Wu, X Meng, A Suslu, ...
Adv. Mater 28 (2), 341-346, 2016
1322016
Controlling the growth of single-walled carbon nanotubes on surfaces using metal and non-metal catalysts
G Hong, Y Chen, P Li, J Zhang
Carbon 50 (6), 2067–2082, 2012
1022012
State of the Art of Single‐Walled Carbon Nanotube Synthesis on Surfaces
Y Chen, Y Zhang, Y Hu, L Kang, S Zhang, H Xie, D Liu, Q Zhao, Q Li, ...
Advanced Materials 26 (34), 5898-5922, 2014
952014
Perspectives on Thermoelectricity in Layered and 2D Materials
J Wu, Y Chen, J Wu, K Hippalgaonkar
Advanced Electronic Materials 4 (12), 1800248, 2018
932018
Chemical vapor deposition growth of single-walled carbon nanotubes with controlled structures for nanodevice applications
Y Chen, J Zhang
Accounts of chemical research 47 (8), 2273-2281, 2014
862014
Diameter controlled growth of single-walled carbon nanotubes from SiO2 nanoparticles
Y Chen, J Zhang
Carbon 49 (10), 3316-3324, 2011
832011
Pressure–Temperature Phase Diagram of Vanadium Dioxide
Y Chen, S Zhang, F Ke, C Ko, S Lee, K Liu, B Chen, JW Ager, R Jeanloz, ...
Nano Letters 17 (4), 2512-2516, 2017
802017
Modulating the Charge‐Transfer Enhancement in GERS using an Electrical Field under Vacuum and an n/p‐Doping Atmosphere
H Xu, Y Chen, W Xu, H Zhang, J Kong, MS Dresselhaus, J Zhang
Small 7 (20), 2945-2952, 2011
762011
Large bandgap of pressurized trilayer graphene
F Ke, Y Chen, K Yin, J Yan, H Zhang, Z Liu, JS Tse, J Wu, H Mao, B Chen
Proceedings of the National Academy of Sciences 116 (19), 9186-9190, 2019
752019
Quantifying van der Waals Interactions in Layered Transition Metal Dichalcogenides from Pressure-Enhanced Valence Band Splitting
P Ci, Y Chen, J Kang, R Suzuki, HS Choe, J Suh, C Ko, T Park, K Shen, ...
Nano Letters 17 (8), 4982-4988, 2017
662017
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