Fiacre Rougieux
Fiacre Rougieux
Senior lecturer, The University of New South Wales
Bestätigte E-Mail-Adresse bei unsw.edu.au - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon
D Macdonald, F Rougieux, A Cuevas, B Lim, J Schmidt, M Di Sabatino, ...
Journal of Applied Physics 105 (9), 093704-093704-7, 2009
1612009
Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence
HT Nguyen, FE Rougieux, B Mitchell, D Macdonald
Journal of Applied Physics 115 (4), 043710, 2014
912014
Generation and annihilation of boron-oxygen-related recombination centers in compensated p-and n-type silicon
B Lim, F Rougieux, D Macdonald, K Bothe, J Schmidt
Journal of Applied Physics 108 (10), 103722, 2010
902010
Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon
NE Grant, VP Markevich, J Mullins, AR Peaker, F Rougieux, D Macdonald
physica status solidi (RRL)-Rapid Research Letters 10 (6), 443-447, 2016
772016
A unified approach to modelling the charge state of monatomic hydrogen and other defects in crystalline silicon
C Sun, FE Rougieux, D Macdonald
Journal of Applied Physics 117 (4), 045702, 2015
742015
Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron
M Forster, E Fourmond, FE Rougieux, A Cuevas, R Gotoh, K Fujiwara, ...
Applied Physics Letters 100 (4), 042110, 2012
602012
Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon
FE Rougieux, D Macdonald, A Cuevas, S Ruffell, J Schmidt, B Lim, ...
Journal of Applied Physics 108 (1), 013706, 2010
602010
Grown-in defects limiting the bulk lifetime of p-type float-zone silicon wafers
NE Grant, FE Rougieux, D Macdonald, J Bullock, Y Wan
Journal of Applied Physics 117 (5), 055711, 2015
572015
Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon
NE Grant, VP Markevich, J Mullins, AR Peaker, F Rougieux, D Macdonald, ...
physica status solidi (a) 213 (11), 2844-2849, 2016
542016
Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon
FE Rougieux, B Lim, J Schmidt, M Forster, D Macdonald, A Cuevas
Journal of Applied Physics 110 (6), 063708, 2011
472011
Accurate measurement of the formation rate of iron–boron pairs in silicon
J Tan, D Macdonald, F Rougieux, A Cuevas
Semiconductor Science and Technology 26 (5), 055019, 2011
382011
Influence of annealing and bulk hydrogenation on lifetime-limiting defects in nitrogen-doped floating zone silicon
FE Rougieux, NE Grant, C Barugkin, D Macdonald, JD Murphy
IEEE Journal of Photovoltaics 5 (2), 495-498, 2014
332014
Reassessment of the recombination parameters of chromium in n-and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon
C Sun, FE Rougieux, D Macdonald
Journal of Applied Physics 115 (21), 214907, 2014
322014
Micrometer-scale deep-level spectral photoluminescence from dislocations in multicrystalline silicon
HT Nguyen, FE Rougieux, F Wang, H Tan, D Macdonald
IEEE Journal of Photovoltaics 5 (3), 799-804, 2015
312015
High efficiency UMG silicon solar cells: impact of compensation on cell parameters
F Rougieux, C Samundsett, KC Fong, A Fell, P Zheng, D Macdonald, ...
Progress in Photovoltaics: Research and Applications 24 (5), 725-734, 2016
282016
Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells
M Forster, P Wagner, J Degoulange, R Einhaus, G Galbiati, FE Rougieux, ...
Solar Energy Materials and Solar Cells 120, 390-395, 2014
282014
Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon
M Forster, A Cuevas, E Fourmond, FE Rougieux, M Lemiti
Journal of Applied Physics 111 (4), 043701, 2012
282012
Hydrogen-induced degradation: Explaining the mechanism behind light-and elevated temperature-induced degradation in n-and p-type silicon
D Chen, P Hamer, M Kim, C Chan, AC nee Wenham, F Rougieux, ...
Solar Energy Materials and Solar Cells 207, 110353, 2020
272020
Determining the charge states and capture mechanisms of defects in silicon through accurate recombination analyses: A review
FE Rougieux, C Sun, D Macdonald
Solar Energy Materials and Solar Cells 187, 263-272, 2018
252018
Recombination activity and impact of the boron–oxygen-related defect in compensated n-type silicon
FE Rougieux, M Forster, D MacDonald, A Cuevas, B Lim, J Schmidt
IEEE Journal of Photovoltaics 1 (1), 54-58, 2011
252011
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