| Co-existence of strongly and weakly localized random laser modes J Fallert, RJB Dietz, J Sartor, D Schneider, C Klingshirn, H Kalt Nature Photonics 3 (5), 279-282, 2009 | 276 | 2009 |
| Terahertz-time domain spectrometer with 90 dB peak dynamic range N Vieweg, F Rettich, A Deninger, H Roehle, R Dietz, T Göbel, M Schell Journal of Infrared, Millimeter, and Terahertz Waves 35, 823-832, 2014 | 218 | 2014 |
| Next generation 1.5 µm terahertz antennas: mesa-structuring of InGaAs/InAlAs photoconductive layers H Roehle, RJB Dietz, HJ Hensel, J Böttcher, H Künzel, D Stanze, M Schell, ... Optics express 18 (3), 2296-2301, 2010 | 218 | 2010 |
| 64 μW pulsed terahertz emission from growth optimized InGaAs/InAlAs heterostructures with separated photoconductive and trapping regions RJB Dietz, B Globisch, M Gerhard, A Velauthapillai, D Stanze, H Roehle, ... Applied Physics Letters 103 (6), 2013 | 127 | 2013 |
| Influence and adjustment of carrier lifetimes in InGaAs/InAlAs photoconductive pulsed terahertz detectors: 6 THz bandwidth and 90dB dynamic range RJB Dietz, B Globisch, H Roehle, D Stanze, T Göbel, M Schell Optics express 22 (16), 19411-19422, 2014 | 124 | 2014 |
| All fiber-coupled THz-TDS system with kHz measurement rate based on electronically controlled optical sampling RJB Dietz, N Vieweg, T Puppe, A Zach, B Globisch, T Göbel, P Leisching, ... Optics letters 39 (22), 6482-6485, 2014 | 109 | 2014 |
| THz generation at 1.55 µm excitation: six-fold increase in THz conversion efficiency by separated photoconductive and trapping regions RJB Dietz, M Gerhard, D Stanze, M Koch, B Sartorius, M Schell Optics express 19 (27), 25911-25917, 2011 | 103 | 2011 |
| Iron doped InGaAs: Competitive THz emitters and detectors fabricated from the same photoconductor B Globisch, RJB Dietz, RB Kohlhaas, T Göbel, M Schell, D Alcer, ... Journal of Applied Physics 121 (5), 2017 | 100 | 2017 |
| Telecom technology based continuous wave terahertz photomixing system with 105 decibel signal-to-noise ratio and 3.5 terahertz bandwidth T Göbel, D Stanze, B Globisch, RJB Dietz, H Roehle, M Schell Optics letters 38 (20), 4197-4199, 2013 | 98 | 2013 |
| Ordered n-type ZnO nanorod arrays H Zhou, J Fallert, J Sartor, RJB Dietz, C Klingshirn, H Kalt, ... Applied physics letters 92 (13), 2008 | 73 | 2008 |
| Absolute terahertz power measurement of a time-domain spectroscopy system B Globisch, RJB Dietz, T Göbel, M Schell, W Bohmeyer, R Müller, ... Optics letters 40 (15), 3544-3547, 2015 | 70 | 2015 |
| Random lasing in ZnO nanocrystals J Fallert, RJB Dietz, M Hauser, F Stelzl, C Klingshirn, H Kalt Journal of Luminescence 129 (12), 1685-1688, 2009 | 57 | 2009 |
| Carrier dynamics in Beryllium doped low-temperature-grown InGaAs/InAlAs B Globisch, RJB Dietz, D Stanze, T Göbel, M Schell Applied Physics Letters 104 (17), 2014 | 54 | 2014 |
| Multichannel terahertz time-domain spectroscopy system at 1030 nm excitation wavelength A Brahm, A Wilms, RJB Dietz, T Göbel, M Schell, G Notni, A Tünnermann Optics express 22 (11), 12982-12993, 2014 | 43 | 2014 |
| Terahertz quasi time-domain spectroscopy based on telecom technology for 1550 nm RB Kohlhaas, A Rehn, S Nellen, M Koch, M Schell, RJB Dietz, JC Balzer Optics Express 25 (11), 12851-12859, 2017 | 42 | 2017 |
| Terahertz detectors from Be-doped low-temperature grown InGaAs/InAlAs: Interplay of annealing and terahertz performance B Globisch, RJB Dietz, S Nellen, T Göbel, M Schell AIP Advances 6 (12), 2016 | 38 | 2016 |
| Large area photoconductive terahertz emitter for 1.55 μm excitation based on an InGaAs heterostructure M Mittendorff, M Xu, RJB Dietz, H Künzel, B Sartorius, H Schneider, ... Nanotechnology 24 (21), 214007, 2013 | 38 | 2013 |
| Multilayer thickness determination using continuous wave THz spectroscopy D Stanze, B Globisch, RJB Dietz, H Roehle, T Göbel, M Schell IEEE Transactions on Terahertz Science and Technology 4 (6), 696-701, 2014 | 37 | 2014 |
| Improving the dynamic range of InGaAs-based THz detectors by localized beryllium doping: up to 70 dB at 3 THz RB Kohlhaas, RJB Dietz, S Breuer, S Nellen, L Liebermeister, M Schell, ... Optics Letters 43 (21), 5423-5426, 2018 | 29 | 2018 |
| Low temperature grown Be-doped InGaAs/InAlAs photoconductive antennas excited at 1030 nm RJB Dietz, R Wilk, B Globisch, H Roehle, D Stanze, S Ullrich, ... Journal of Infrared, Millimeter, and Terahertz Waves 34, 231-237, 2013 | 28 | 2013 |
Martin SchellInstitute Head, Fraunhofer HHI, Berlin, GermanyVerified email at hhi.fraunhofer.de
