Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides S Zhang, D Holec, WY Fu, CJ Humphreys, MA Moram Journal of applied physics 114 (13), 2013 | 237 | 2013 |
Elastic constants and critical thicknesses of ScGaN and ScAlN S Zhang, WY Fu, D Holec, CJ Humphreys, MA Moram Journal of applied physics 114 (24), 2013 | 142 | 2013 |
Monolithically integrated InGaN/GaN light-emitting diodes, photodetectors, and waveguides on Si substrate KH Li, WY Fu, YF Cheung, KKY Wong, Y Wang, KM Lau, HW Choi Optica 5 (5), 564-569, 2018 | 132 | 2018 |
Wafer-scale fabrication of non-polar mesoporous GaN distributed Bragg reflectors via electrochemical porosification T Zhu, Y Liu, T Ding, WY Fu, J Jarman, CX Ren, RV Kumar, RA Oliver Scientific reports 7 (1), 1-8, 2017 | 73 | 2017 |
Monolithic integration of GaN-on-sapphire light-emitting diodes, photodetectors, and waveguides KH Li, YF Cheung, WY Fu, KKY Wong, HW Choi IEEE Journal of Selected Topics In Quantum Electronics 24 (6), 1-6, 2018 | 69 | 2018 |
Chip-scale GaN integration KH Li, WY Fu, HW Choi Progress in quantum electronics 70, 100247, 2020 | 63 | 2020 |
Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography F Tang, T Zhu, F Oehler, WY Fu, JT Griffiths, FCP Massabuau, ... Applied Physics Letters 106 (7), 2015 | 62 | 2015 |
Structure and strain relaxation effects of defects in InxGa1− xN epilayers SL Rhode, WY Fu, MA Moram, FCP Massabuau, MJ Kappers, ... Journal of Applied Physics 116 (10), 2014 | 52 | 2014 |
Intensity-stabilized LEDs with monolithically integrated photodetectors KH Li, H Lu, WY Fu, YF Cheung, HW Choi IEEE Transactions on Industrial Electronics 66 (9), 7426-7432, 2018 | 51 | 2018 |
Close-packed hemiellipsoid arrays: A photonic band gap structure patterned by nanosphere lithography WY Fu, KKY Wong, HW Choi Applied Physics Letters 95 (13), 2009 | 49 | 2009 |
InGaN RGB light-emitting diodes with monolithically integrated photodetectors for stabilizing color chromaticity KH Li, YF Cheung, W Jin, WY Fu, ATL Lee, SC Tan, SY Hui, HW Choi IEEE Transactions on Industrial Electronics 67 (6), 5154-5160, 2019 | 41 | 2019 |
Nanocathodoluminescence reveals mitigation of the stark shift in InGaN quantum wells by Si doping JT Griffiths, S Zhang, B Rouet-Leduc, WY Fu, A Bao, D Zhu, DJ Wallis, ... Nano letters 15 (11), 7639-7643, 2015 | 40 | 2015 |
The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem CJ Humphreys, JT Griffiths, F Tang, F Oehler, SD Findlay, C Zheng, ... Ultramicroscopy 176, 93-98, 2017 | 39 | 2017 |
Geometrical shaping of InGaN light-emitting diodes by laser micromachining WY Fu, KN Hui, XH Wang, KKY Wong, PT Lai, HW Choi IEEE Photonics Technology Letters 21 (15), 1078-1080, 2009 | 39 | 2009 |
Evaluation of InGaN/GaN light-emitting diodes of circular geometry XH Wang, WY Fu, PT Lai, HW Choi Optics Express 17 (25), 22311-22319, 2009 | 37 | 2009 |
The microstructure of non-polar a-plane (112¯ 0) InGaN quantum wells JT Griffiths, F Oehler, F Tang, S Zhang, WY Fu, T Zhu, SD Findlay, ... Journal of Applied Physics 119 (17), 2016 | 27 | 2016 |
Polychromatic light-emitting diodes with a fluorescent nanosphere opal coating KN Hui, WY Fu, WN Ng, CH Leung, PT Lai, KKY Wong, HW Choi Nanotechnology 19 (35), 355203, 2008 | 25 | 2008 |
Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method JT Griffiths, T Zhu, F Oehler, RM Emery, WY Fu, BPL Reid, RA Taylor, ... APL materials 2 (12), 2014 | 23 | 2014 |
GaN microdisk with direct coupled waveguide for unidirectional whispering-gallery mode emission CH To, WY Fu, KH Li, YF Cheung, HW Choi Optics Letters 45 (4), 791-794, 2020 | 22 | 2020 |
Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence T Zhu, D Gachet, F Tang, WY Fu, F Oehler, MJ Kappers, P Dawson, ... Applied Physics Letters 109 (23), 2016 | 17 | 2016 |