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Mehmet Onur Baykan
Mehmet Onur Baykan
Augmented Reality Hardware Reliability Engineer, Facebook
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Title
Cited by
Cited by
Year
Strain effects on three-dimensional, two-dimensional, and one-dimensional silicon logic devices: Predicting the future of strained silicon
MO Baykan, SE Thompson, T Nishida
Journal of Applied Physics 108 (9), 2010
772010
Non-volatile RRAM embedded into 22FFL FinFET technology
O Golonzka, U Arslan, P Bai, M Bohr, O Baykan, Y Chang, A Chaudhari, ...
2019 Symposium on VLSI Technology, T230-T231, 2019
622019
Strained SiGe and Si FinFETs for high performance logic with SiGe/Si stack on SOI
I Ok, K Akarvardar, S Lin, M Baykan, CD Young, PY Hung, MP Rodgers, ...
2010 International Electron Devices Meeting, 34.2. 1-34.2. 4, 2010
572010
Critical discussion on (100) and (110) orientation dependent transport: nMOS planar and FinFET
CD Young, MO Baykan, A Agrawal, H Madan, K Akarvardar, C Hobbs, ...
2011 Symposium on VLSI Technology-Digest of Technical Papers, 18-19, 2011
352011
(1 1 0) and (1 0 0) Sidewall-oriented FinFETs: A performance and reliability investigation
CD Young, K Akarvardar, MO Baykan, K Matthews, I Ok, T Ngai, KW Ang, ...
Solid-state electronics 78, 2-10, 2012
302012
Strain tunable silicon and germanium nanowire optoelectronic devices
MO Baykan, T Nishida, SE Thompson
US Patent App. 13/500,681, 2012
282012
Impact of fin doping and gate stack on FinFET (110) and (100) electron and hole mobilities
K Akarvardar, CD Young, MO Baykan, I Ok, T Ngai, KW Ang, MP Rodgers, ...
IEEE electron device letters 33 (3), 351-353, 2012
232012
Performance and variability in multi-VTFinFETs using fin doping
K Akarvardar, CD Young, D Veksler, KW Ang, I Ok, M Rodgers, V Kaushik, ...
Proceedings of Technical Program of 2012 VLSI Technology, System and …, 2012
132012
Physical insights on comparable electron transport in (100) and (110) double-gate fin field-effect transistors
MO Baykan, CD Young, K Akarvardar, P Majhi, C Hobbs, P Kirsch, ...
Applied Physics Letters 100 (12), 2012
52012
Strain effects in AlGaN/GaN HEMTs
M Chu, AD Koehler, A Gupta, S Parthasarathy, MO Baykan, SE Thompson, ...
Materials and Reliability Handbook for Semiconductor Optical and Electron …, 2013
42013
Electrical characterization and reliability assessment of double-gate FinFETs
CD Young, K Akarvardar, K Matthews, MO Baykan, J Pater, I Ok, T Ngai, ...
ECS Transactions 50 (4), 201, 2013
32013
Understanding the FinFET mobility by systematic experiments
K Akarvardar, CD Young, MO Baykan, CC Hobbs
Toward Quantum FinFET, 55-79, 2013
22013
Hole mobility enhancement in uniaxially strained SiGe FinFETs: analysis and prospects
R Bijesh, I Ok, M Baykan, C Hobbs, P Majhi, R Jammy, S Datta
69th Device Research Conference, 237-238, 2011
22011
Size-and orientation-dependent strain effects on ballistic Si p-type nanowire field-effect transistors
MO Baykan, SE Thompson, T Nishida
IEEE transactions on nanotechnology 11 (6), 1231-1238, 2012
12012
Strain effects in low-dimensional silicon MOS and AlGaN/GaN HEMT devices
MO Baykan
University of Florida, 2012
12012
Self-aligned gate edge architecture with alternate channel material
B Guha, A Bowonder, W Hsu, MO Baykan, T Ghani
US Patent 11,456,357, 2022
2022
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