| Morphological evolution of SiGe layers I Berbezier, A Ronda, F Volpi, A Portavoce Surface science 531 (3), 231-243, 2003 | 45 | 2003 |
| Characterization of low-k SiOCH dielectric for 45 nm technology and link between the dominant leakage path and the breakdown localization M Vilmay, D Roy, F Volpi, JM Chaix Microelectronic engineering 85 (10), 2075-2078, 2008 | 37 | 2008 |
| XPS studies of the ALD-growth of TaN diffusion barriers: Impact of the dielectric surface chemistry on the growth mechanism F Volpi, L Cadix, G Berthomé, E Blanquet, N Jourdan, J Torres Microelectronic engineering 85 (10), 2068-2070, 2008 | 34 | 2008 |
| Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition L Tian, S Ponton, M Benz, A Crisci, R Reboud, G Giusti, F Volpi, ... Surface and Coatings Technology 347, 181-190, 2018 | 33 | 2018 |
| Sb segregation in Si and SiGe: effect on the growth of self-organised Ge dots A Portavoce, F Volpi, A Ronda, P Gas, I Berbezier Thin Solid Films 380 (1-2), 164-168, 2000 | 32 | 2000 |
| Multiscale modeling of the anisotropic electrical conductivity of architectured and nanostructured Cu-Nb composite wires and experimental comparison T Gu, JR Medy, F Volpi, O Castelnau, S Forest, E Hervé-Luanco, ... Acta Materialia 141, 131-141, 2017 | 31 | 2017 |
| Impact of patterning and ashing on electrical properties and reliability of interconnects in a porous SiOCH ultra low-k dielectric material M Aimadeddine, V Arnal, A Farcy, C Guedj, T Chevolleau, N Possémé, ... Microelectronic Engineering 82 (3-4), 341-347, 2005 | 31 | 2005 |
| Identification of the (√ E+ 1/E)-dependence of porous low-k time dependent dielectric breakdown using over one year long package level tests E Chery, X Federspiel, D Roy, F Volpi, JM Chaix Microelectronic Engineering 109, 90-93, 2013 | 30 | 2013 |
| Copper-Line Topology Impact on the Reliability of SiOCH Low- for the 45-nm Technology Node and Beyond M Vilmay, D Roy, C Monget, F Volpi, JM Chaix IEEE Transactions on Device and Materials Reliability 9 (2), 120-127, 2009 | 23 | 2009 |
| Gaseous phase study of the Zr-organometallic ALD precursor TEMAZ by mass spectrometry D Monnier, I Nuta, C Chatillon, M Gros-Jean, F Volpi, E Blanquet Journal of The Electrochemical Society 156 (1), H71, 2008 | 23 | 2008 |
| Nucleation and evolution of Si1− xGex islands on Si (001) F Volpi, A Portavoce, A Ronda, Y Shi, JM Gay, I Berbezier Thin Solid Films 380 (1-2), 46-50, 2000 | 23 | 2000 |
| Electrically active defects induced by sputtering deposition on silicon: The role of hydrogen F Volpi, AR Peaker, I Berbezier, A Ronda Journal of applied physics 95 (9), 4752-4760, 2004 | 22 | 2004 |
| Undoped TiO2 and nitrogen-doped TiO2 thin films deposited by atomic layer deposition on planar and architectured surfaces for photovoltaic applications L Tian, A Soum-Glaude, F Volpi, L Salvo, G Berthomé, S Coindeau, ... Journal of Vacuum Science & Technology A 33 (1), 2015 | 21 | 2015 |
| Study of stress in tensile nitrogen-plasma-treated multilayer silicon nitride films P Morin, G Raymond, D Benoit, D Guiheux, R Pantel, F Volpi, M Braccini Journal of Vacuum Science & Technology A 29 (4), 2011 | 19 | 2011 |
| Copper line topology impact on the SiOCH low-k reliability in sub 45nm technology node. From the time-dependent dielectric breakdown to the product lifetime M Vilmay, D Roy, C Monget, F Volpi, JM Chaix 2009 IEEE International Reliability Physics Symposium, 606-612, 2009 | 19 | 2009 |
| Experimental insights into Si and SiGe growth instabilities: Influence of kinetic growth parameters and substrate orientation A Ronda, I Berbezier, A Pascale, A Portavoce, F Volpi Materials Science and Engineering: B 101 (1-3), 95-101, 2003 | 17 | 2003 |
| Mapping of elastic modulus at sub-micrometer scale with acoustic contact resonance AFM F Mege, F Volpi, M Verdier Microelectronic engineering 87 (3), 416-420, 2010 | 15 | 2010 |
| Quantitative evolution of electrical contact resistance between aluminum thin films D Mercier, V Mandrillon, A Holtz, F Volpi, M Verdier, Y Bréchet 2012 IEEE 58th Holm Conference on Electrical Contacts (Holm), 1-8, 2012 | 14 | 2012 |
| Preparation, microstructure and properties of magnesium-γMg17Al12 complex metallic alloy in situ composites P Donnadieu, S Benrhaiem, C Tassin, F Volpi, JJ Blandin Journal of Alloys and Compounds 702, 626-635, 2017 | 12 | 2017 |
| Resistive-nanoindentation: contact area monitoring by real-time electrical contact resistance measurement S Comby-Dassonneville, F Volpi, G Parry, D Pellerin, M Verdier MRS Communications 9 (3), 1008-1014, 2019 | 11 | 2019 |
