Reliability of S Kupke, S Knebel, U Schroeder, S Schmelzer, U Bottger, T Mikolajick
IEEE electron device letters 33 (12), 1699-1701, 2012
26 2012 Defect generation and activation processes in HfO2 thin films: Contributions to stress‐induced leakage currents R Öttking, S Kupke, E Nadimi, R Leitsmann, F Lazarevic, P Plänitz, G Roll, ...
physica status solidi (a) 212 (3), 547-553, 2015
23 2015 Influence of frequency dependent time to breakdown on high-k/metal gate reliability S Knebel, S Kupke, U Schroeder, S Slesazeck, T Mikolajick, R Agaiby, ...
IEEE transactions on electron devices 60 (7), 2368-2371, 2013
23 2013 Dynamic off-state TDDB of ultra short channel HKMG nFETS and its implications on CMOS logic reliability S Kupke, S Knebel, S Rahman, S Slesazeck, T Mikolajick, R Agaiby, ...
2014 IEEE International Reliability Physics Symposium, 5B. 1.1-5B. 1.6, 2014
18 2014 Evolution of the structure and magneto-optical properties of ion beam synthesized iron nanoclusters J Kennedy, J Leveneur, Y Takeda, GVM Williams, S Kupke, DRG Mitchell, ...
Journal of Materials Science 47, 1127-1134, 2012
18 2012 The Degradation Process of High- E Nadimi, G Roll, S Kupke, R Öttking, P Plänitz, C Radehaus, M Schreiber, ...
IEEE Transactions on Electron Devices 61 (5), 1278-1283, 2014
17 2014 OFF-state induced threshold voltage relaxation after PBTI stress S Kupke, S Knebel, G Roll, S Slesazeck, T Mikolajick, G Krause, G Kurz
2012 IEEE International Integrated Reliability Workshop Final Report, 95-98, 2012
15 2012 Influence of nitrogen trap states on the electronic properties of high-k metal gate transistors J Ocker, S Kupke, S Slesazeck, T Mikolajick, E Erben, M Drescher, ...
2014 IEEE International Integrated Reliability Workshop Final Report (IIRW …, 2014
4 2014 Experimental proof of the drain-side dielectric breakdown of HKMG nMOSFETs under logic circuit operation S Kupke, S Knebel, J Ocker, S Slesazeck, R Agaiby, M Trentzsch, ...
IEEE Electron Device Letters 36 (5), 430-432, 2015
3 2015 Dielectric backside passivation—improvements by dipole optimization S Jakschik, E Erben, F Benner, S Kupke, I Dirnstorfer, M Rose, I Endler, ...
Proc. 26th European Photovoltaic Solar Energy Conference and Exhibition …, 2011
2 2011 Reliability of high-k/metal gate field-effect transistors considering circuit operational constraints S Kupke
BoD–Books on Demand, 2016
1 2016 Reliability of Formula Not Shown Stacks for DRAM Applications S Kupke, S Knebel, U Schroeder, S Schmelzer, U Bottger, T Mikolajick
IEEE ELECTRON DEVICE LETTERS 33 (12), 1699-1701, 2012
2012 Comparison of the annealing treatments of PVD and ALD Al {sub 2} O {sub 3} passivated silicon for solar cell applications F Benner, S Kupke, S Jakschik, M Tarasova, T Mikolajick
Verhandlungen der Deutschen Physikalischen Gesellschaft, 2011
2011 
Thomas MikolajickScientific Director, NaMLab GmbH and Professor for Nanoelectronics, TU DresdenBestätigte E-Mail-Adresse bei namlab.com
