Wideband 240-GHz transmitter and receiver in BiCMOS technology with 25-Gbit/s data rate MH Eissa, A Malignaggi, R Wang, M Elkhouly, K Schmalz, AC Ulusoy, ...
IEEE Journal of Solid-State Circuits 53 (9), 2532-2542, 2018
115 2018 D-band frequency quadruplers in BiCMOS technology M Kucharski, MH Eissa, A Malignaggi, D Wang, HJ Ng, D Kissinger
IEEE Journal of Solid-State Circuits 53 (9), 2465-2478, 2018
58 2018 4.5 A 13.5 dBm fully integrated 200-to-255GHz power amplifier with a 4-way power combiner in SiGe: C BiCMOS MH Eissa, D Kissinger
2019 IEEE International Solid-State Circuits Conference-(ISSCC), 82-84, 2019
52 2019 Topical treatment of erectile dysfunction: randomised double blind placebo controlled trial of cream containing aminophylline, isosorbide dinitrate, and co-dergocrine mesylate A Gomaa, M Shalaby, M Osman, M Eissa, A Eizat, M Mahmoud, N Mikhail
Bmj 312 (7045), 1512-1515, 1996
42 1996 100 Gbps 0.8-m wireless link based on fully integrated 240 GHz IQ transmitter and receiver MH Eissa, N Maletic, E Grass, R Krämer, D Kissinger, A Malignaggi
2020 IEEE/MTT-S International Microwave Symposium (IMS), 627-630, 2020
41 2020 A 216–256 GHz fully differential frequency multiplier-by-8 chain with 0 dBm output power MH Eissa, A Malignaggi, M Ko, K Schmalz, J Borngräber, AC Ulusoy, ...
International Journal of Microwave and Wireless Technologies 10 (5-6), 562-569, 2018
37 2018 A 220–275 GHz direct-conversion receiver in 130-nm SiGe: C BiCMOS technology MH Eissa, A Awny, M Ko, K Schmalz, M Elkhouly, A Malignaggi, ...
IEEE Microwave and Wireless Components Letters 27 (7), 675-677, 2017
36 2017 Low-Power Miniature -Band Sensors for Dielectric Characterization of Biomaterials FI Jamal, S Guha, MH Eissa, J Borngräber, C Meliani, HJ Ng, D Kissinger, ...
IEEE Transactions on Microwave Theory and Techniques 65 (3), 1012-1023, 2016
35 2016 A 13.5-dBm 200–255-GHz 4-way power amplifier and frequency source in 130-nm BiCMOS MH Eissa, A Malignaggi, D Kissinger
IEEE Solid-State Circuits Letters 2 (11), 268-271, 2019
31 2019 Integrated 240-GHz dielectric sensor with DC readout circuit in a 130-nm SiGe BiCMOS technology D Wang, K Schmalz, MH Eissa, J Borngräber, M Kucharski, M Elkhouly, ...
IEEE Transactions on Microwave Theory and Techniques 66 (9), 4232-4241, 2018
30 2018 Transmitters and receivers in SiGe BiCMOS technology for sensitive gas spectroscopy at 222-270 GHz K Schmalz, N Rothbart, MH Eissa, J Borngräber, D Kissinger, HW Hübers
AIP Advances 9 (1), 2019
28 2019 Full D-band transmit–receive module for phased array systems in 130-nm SiGe BiCMOS A Karakuzulu, MH Eissa, D Kissinger, A Malignaggi
IEEE Solid-State Circuits Letters 4, 40-43, 2021
26 2021 Broadband 110-170 GHz true time delay circuit in a 130-nm SiGe BiCMOS technology A Karakuzulu, MH Eissa, D Kissinger, A Malignaggi
2020 IEEE/MTT-S International Microwave Symposium (IMS), 775-778, 2020
26 2020 A Broadband 110–170-GHz Stagger-Tuned Power Amplifier With 13.5-dBm P sat in 130-nm SiGe A Karakuzulu, MH Eissa, D Kissinger, A Malignaggi
IEEE Microwave and Wireless Components Letters 31 (1), 56-59, 2020
23 2020 A wideband monolithically integrated photonic receiver in 0.25-µm SiGe: C BiCMOS technology MH Eissa, A Awny, G Winzer, M Kroh, S Lischke, D Knoll, L Zimmermann, ...
ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference, 487-490, 2016
20 2016 A 300-GHz low-noise amplifier in 130-nm SiGe SG13G3 technology A Gadallah, MH Eissa, T Mausolf, D Kissinger, A Malignaggi
IEEE Microwave and Wireless Components Letters 32 (4), 331-334, 2021
19 2021 Frequency interleaving IF transmitter and receiver for 240-GHz communication in SiGe: C BiCMOS MH Eissa, N Maletic, L Lopacinski, A Malignaggi, G Panic, R Kraemer, ...
IEEE Transactions on Microwave Theory and Techniques 68 (1), 239-251, 2019
18 2019 Data link layer processor for 100 Gbps terahertz wireless communications in 28 nm CMOS technology L Lopacinski, M Marinkovic, G Panic, MH Eissa, A Hasani, ...
IEEE Access 7, 44489-44502, 2019
17 2019 Dual-band transmitter and receiver with bowtie-antenna in 0.13 μm SiGe BiCMOS for gas spectroscopy at 222-270 GHz K Schmalz, N Rothbart, A Glück, MH Eissa, T Mausolf, E Turkmen, ...
IEEE Access 9, 124805-124816, 2021
16 2021 110–135 GHz SiGe BiCMOS frequency quadrupler based on a single Gilbert cell M Ko, MH Eissa, J Borngräber, AC Ulusoy, D Kissinger
2018 13th European Microwave Integrated Circuits Conference (EuMIC), 101-104, 2018
16 2018