Byungjin Cho
Byungjin Cho
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Charge-transfer-based gas sensing using atomic-layer MoS2
B Cho, MG Hahm, M Choi, J Yoon, AR Kim, YJ Lee, SG Park, JD Kwon, ...
Scientific reports 5 (1), 1-6, 2015
Organic resistive memory devices: performance enhancement, integration, and advanced architectures
B Cho, S Song, Y Ji, TW Kim, T Lee
Advanced Functional Materials 21 (15), 2806-2829, 2011
Chemical Sensing of 2D Graphene/MoS2 Heterostructure device
B Cho, J Yoon, SK Lim, AR Kim, DH Kim, SG Park, JD Kwon, YJ Lee, ...
ACS applied materials & interfaces 7 (30), 16775-16780, 2015
Ultrasmooth, extremely deformable and shape recoverable Ag nanowire embedded transparent electrode
S Nam, M Song, DH Kim, B Cho, HM Lee, JD Kwon, SG Park, KS Nam, ...
Scientific reports 4 (1), 1-7, 2014
Three‐dimensional integration of organic resistive memory devices
S Song, B Cho, TW Kim, Y Ji, M Jo, G Wang, M Choe, YH Kahng, ...
Advanced Materials 22 (44), 5048-5052, 2010
Rewritable switching of one diode–one resistor nonvolatile organic memory devices
B Cho, TW Kim, S Song, Y Ji, M Jo, H Hwang, GY Jung, T Lee
Advanced Materials 22 (11), 1228-1232, 2010
Graphene-based gas sensor: metal decoration effect and application to a flexible device
B Cho, J Yoon, MG Hahm, DH Kim, AR Kim, YH Kahng, SW Park, YJ Lee, ...
Journal of Materials Chemistry C 2 (27), 5280-5285, 2014
Stable switching characteristics of organic nonvolatile memory on a bent flexible substrate
Y Ji, B Cho, S Song, TW Kim, M Choe, YH Kahng, T Lee
Advanced Materials 22 (28), 3071-3075, 2010
Flexible molecular-scale electronic devices
S Park, G Wang, B Cho, Y Kim, S Song, Y Ji, MH Yoon, T Lee
Nature nanotechnology 7 (7), 438-442, 2012
Bifunctional Sensing Characteristics of Chemical Vapor Deposition Synthesized Atomic-Layered MoS2
B Cho, AR Kim, Y Park, J Yoon, YJ Lee, S Lee, TJ Yoo, CG Kang, BH Lee, ...
ACS applied materials & interfaces 7 (4), 2952-2959, 2015
Direct observation of Ag filamentary paths in organic resistive memory devices
B Cho, JM Yun, S Song, Y Ji, DY Kim, T Lee
Advanced Functional Materials 21 (20), 3976-3981, 2011
Flexible organic memory devices with multilayer graphene electrodes
Y Ji, S Lee, B Cho, S Song, T Lee
Acs Nano 5 (7), 5995-6000, 2011
Unipolar nonvolatile memory devices with composites of poly (9-vinylcarbazole) and titanium dioxide nanoparticles
B Cho, TW Kim, M Choe, G Wang, S Song, T Lee
Organic Electronics 10 (3), 473-477, 2009
One Transistor–One Resistor Devices for Polymer Non‐Volatile Memory Applications
TW Kim, H Choi, SH Oh, G Wang, DY Kim, H Hwang, T Lee
Advanced Materials 21 (24), 2497-2500, 2009
Effect of Nb Doping on Chemical Sensing Performance of Two-Dimensional Layered MoSe2
SY Choi, Y Kim, HS Chung, AR Kim, JD Kwon, J Park, YL Kim, SH Kwon, ...
ACS applied materials & interfaces 9 (4), 3817-3823, 2017
Structural and Electrical Characterization of a Block Copolymer‐Based Unipolar Nonvolatile Memory Device
NG Kang, B Cho, BG Kang, S Song, T Lee, JS Lee
Advanced Materials 24 (3), 385-390, 2012
Organic nonvolatile memory devices with charge trapping multilayer graphene film
Y Ji, M Choe, B Cho, S Song, J Yoon, HC Ko, T Lee
Nanotechnology 23 (10), 105202, 2012
Analog neuromorphic module based on carbon nanotube synapses
AM Shen, CL Chen, K Kim, B Cho, A Tudor, Y Chen
ACS nano 7 (7), 6117-6122, 2013
Alloyed 2D metal–semiconductor atomic layer junctions
AR Kim, Y Kim, J Nam, HS Chung, DJ Kim, JD Kwon, SW Park, J Park, ...
Nano letters 16 (3), 1890-1895, 2016
Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure
TW Kim, H Choi, SH Oh, M Jo, G Wang, B Cho, DY Kim, H Hwang, T Lee
Nanotechnology 20 (2), 025201, 2008
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