| Oxidation and oxidative vapor-phase etching of few-layer MoS2 TN Walter, F Kwok, H Simchi, HM Aldosari, SE Mohney Journal of Vacuum Science & Technology B 35 (2), 2017 | 63 | 2017 |
| Nanocluster production for solar cell applications HM Al Dosari, AI Ayesh Journal of Applied Physics 114 (5), 2013 | 29 | 2013 |
| Effects of top electrode material in hafnium-oxide-based memristive systems on highly-doped Si S Saylan, HM Aldosari, K Humood, M Abi Jaoude, F Ravaux, ... Scientific reports 10 (1), 19541, 2020 | 14 | 2020 |
| Impact of premetallization surface preparation on nickel-based Ohmic contacts to germanium telluride: an x-ray photoelectron spectroscopic study HM Aldosari, H Simchi, Z Ding, KA Cooley, SY Yu, SE Mohney ACS Applied Materials & Interfaces 8 (50), 34802-34809, 2016 | 13 | 2016 |
| Review of electrical contacts to phase change materials and an unexpected trend between metal work function and contact resistance to germanium telluride KA Cooley, HM Aldosari, K Yang, SE Mohney Journal of Vacuum Science & Technology A 38 (5), 2020 | 10 | 2020 |
| Very low-resistance Mo-based Ohmic contacts to GeTe HM Aldosari, KA Cooley, SY Yu, H Simchi, SE Mohney Journal of Applied Physics 122 (17), 2017 | 10 | 2017 |
| Effect of vacuum annealing on structural and electrical properties of germanium telluride thin films A Ali, SM Ansari, B Ehab, B Mohammad, DH Anjum, HM Aldosari Materials Research Bulletin 146, 111575, 2022 | 9 | 2022 |
| Thermal stability of low-resistance Au Ohmic contacts to GeTe HM Aldosari, KA Cooley, SY Yu, KC Kragh-Buetow, SE Mohney Thin Solid Films 621, 145-150, 2017 | 8 | 2017 |
| Stopping Voltage‐Dependent PCM and RRAM‐Based Neuromorphic Characteristics of Germanium Telluride Y Abbas, SM Ansari, I Taha, H Abunahla, MU Khan, M Rezeq, ... Advanced Functional Materials 34 (15), 2214615, 2024 | 6 | 2024 |
| Production of Size-Controlled Gold Nanoclusters for Vapor–Liquid–Solid Method BMHMA Alam Saj, Shaikha Alketbi, Sumayya M. Ansari, Dalaver H. Anjum Nanomaterials 12 (5), 763, 2022 | 6 | 2022 |
| Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications R Khan, NU Rehman, S Iqbal, S Abdullaev, HM Aldosari ACS Applied Electronic Materials 6 (1), 73-119, 2023 | 4 | 2023 |
| Influence of molybdenum doping on the structural, electrical, and optical properties of germanium telluride thin films SM Ansari, I Taha, X Han, DH Anjum, B Mohammad, N Amrane, ... Journal of Materials Research and Technology 24, 2538-2549, 2023 | 2 | 2023 |
| Factors controlling the resistance of Ohmic contacts to germanium telluride HM Aldosari The Pennsylvania State University, 2016 | 2 | 2016 |
| Temperature dependence of capacitance–voltage characteristics of germanium telluride thin films SM Ansari, S Saylan, I Taha, DH Anjum, B Mohammad, HM Aldosari Journal of Materials Research and Technology 18, 2631-2640, 2022 | 1 | 2022 |
| Growth and characterization of germanium telluride nanowires via vapor–liquid–solid mechanism I Taha, SM Ansari, S Alketbi, B Mohammad, HM Aldosari Nanotechnology 35 (2), 025702, 2023 | | 2023 |
Baker MohammadComputer and Communication Engineering, Khalifa UniversityVerified email at ku.ac.ae
