|A highly-efficient, concentrating-photovoltaic/thermoelectric hybrid generator|
TH Kil, S Kim, DH Jeong, DM Geum, S Lee, SJ Jung, S Kim, C Park, ...
Nano energy 37, 242-247, 2017
|Ultra-high-throughput production of III-V/Si wafer for electronic and photonic applications|
DM Geum, MS Park, JY Lim, HD Yang, JD Song, CZ Kim, E Yoon, SH Kim, ...
Scientific reports 6 (1), 20610, 2016
|Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding-interface-engineered vertical stacking and surface passivation|
DM Geum, SK Kim, CM Kang, SH Moon, J Kyhm, JH Han, DS Lee, ...
Nanoscale 11 (48), 23139-23148, 2019
|Effect of copper surface pre-treatment on the properties of CVD grown graphene|
MS Kim, JM Woo, DM Geum, JR Rani, JH Jang
Aip Advances 4 (12), 2014
|Fabrication of high-quality GaAs-based photodetector arrays on Si|
SH Kim, DM Geum, MS Park, H Kim, JD Song, WJ Choi
Applied Physics Letters 110 (15), 2017
|Bioinspired photoresponsive single transistor neuron for a neuromorphic visual system|
JK Han, DM Geum, MW Lee, JM Yu, SK Kim, S Kim, YK Choi
Nano Letters 20 (12), 8781-8788, 2020
|Heterogeneous integration toward a monolithic 3-D chip enabled by III–V and Ge materials|
SH Kim, SK Kim, JP Shim, DM Geum, G Ju, HS Kim, HJ Lim, HR Lim, ...
IEEE Journal of the Electron Devices Society 6, 579-587, 2018
|Ultra-lightweight, flexible InGaP/GaAs tandem solar cells with a dual-function encapsulation layer|
TS Kim, HJ Kim, DM Geum, JH Han, IS Kim, N Hong, GH Ryu, JH Kang, ...
ACS Applied Materials & Interfaces 13 (11), 13248-13253, 2021
|GaAs solar cell on Si substrate with good ohmic GaAs/Si interface by direct wafer bonding|
SH Kim, DM Geum, MS Park, CZ Kim, WJ Choi
Solar Energy Materials and Solar Cells 141, 372-376, 2015
|In0.53Ga0.47As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors Utilizing Y2O3Buried Oxide|
SH Kim, DM Geum, MS Park, WJ Choi
IEEE Electron Device Letters 36 (5), 451-453, 2015
|Monolithic integration of visible GaAs and near-infrared InGaAs for multicolor photodetectors by using high-throughput epitaxial lift-off toward high-resolution imaging systems|
DM Geum, SH Kim, SK Kim, SS Kang, JH Kyhm, J Song, WJ Choi, E Yoon
Scientific Reports 9 (1), 18661, 2019
|Fabrication and characterization of Pt/Al2O3/Y2O3/In0. 53Ga0. 47As MOSFETs with low interface trap density|
SK Kim, DM Geum, JP Shim, CZ Kim, H Kim, JD Song, WJ Choi, SJ Choi, ...
Applied Physics Letters 110 (4), 2017
|Stackable InGaAs-on-insulator HEMTs for monolithic 3-D integration|
J Jeong, SK Kim, J Kim, DM Geum, J Park, JH Jang, S Kim
IEEE Transactions on Electron Devices 68 (5), 2205-2211, 2021
|3D stackable synaptic transistor for 3D integrated artificial neural networks|
SK Kim, YJ Jeong, P Bidenko, HR Lim, YR Jeon, H Kim, YJ Lee, ...
ACS applied materials & interfaces 12 (6), 7372-7380, 2020
|Highly stable self-aligned Ni-InGaAs and non-self-aligned Mo contact for monolithic 3-D integration of InGaAs MOSFETs|
S Kim, SK Kim, S Shin, JH Han, DM Geum, JP Shim, S Lee, H Kim, G Ju, ...
IEEE Journal of the Electron Devices Society 7, 869-877, 2019
|Understanding the sidewall passivation effects in AlGaInP/GaInP micro-LED|
J Park, W Baek, DM Geum, S Kim
Nanoscale Research Letters 17 (1), 29, 2022
|Arrayed MoS2–In0.53Ga0.47As van der Waals Heterostructure for High‐Speed and Broadband Detection from Visible to Shortwave‐Infrared Light|
DM Geum, S Kim, JH Khym, J Lim, SK Kim, SY Ahn, TS Kim, K Kang, ...
Small 17 (17), 2007357, 2021
|Monolithic 3D integration of InGaAs photodetectors on Si MOSFETs using sequential fabrication process|
DM Geum, SK Kim, S Lee, D Lim, HJ Kim, CH Choi, SH Kim
IEEE Electron Device Letters 41 (3), 433-436, 2020
|10-nm fin-width InGaSb p-channel self-aligned FinFETs using antimonide-compatible digital etch|
W Lu, IP Roh, DM Geum, SH Kim, JD Song, L Kong, JA del Alamo
2017 IEEE international electron devices meeting (IEDM), 17.7. 1-17.7. 4, 2017
|Fabrication of InGaAs-on-insulator substrates using direct wafer-bonding and epitaxial lift-off techniques|
SK Kim, JP Shim, DM Geum, CZ Kim, HS Kim, JD Song, SJ Choi, DH Kim, ...
IEEE Transactions on Electron Devices 64 (9), 3601-3608, 2017