| Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO2/4H-SiC (0001) interface and its correlation with electrical properties H Watanabe, T Hosoi, T Kirino, Y Kagei, Y Uenishi, A Chanthaphan, ... Applied Physics Letters 99 (2), 2011 | 151 | 2011 |
| Investigation of unusual mobile ion effects in thermally grown SiO2 on 4H-SiC (0001) at high temperatures A Chanthaphan, T Hosoi, S Mitani, Y Nakano, T Nakamura, T Shimura, ... Applied Physics Letters 100 (25), 2012 | 54 | 2012 |
| Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas TSHW Atthawut Chanthaphan, Takuji Hosoi AIP Advance 5 (9), 097134, 2015 | 48 | 2015 |
| Understanding and controlling bias-temperature instability in SiC metal-oxide-semiconductor devices induced by unusual generation of mobile ions A Chanthaphan, T Hosoi, Y Nakano, T Nakamura, T Shimura, ... Applied Physics Letters 102 (9), 2013 | 30 | 2013 |
| Improved bias-temperature instability characteristics in SiC metal-oxide-semiconductor devices with aluminum oxynitride dielectrics A Chanthaphan, T Hosoi, Y Nakano, T Nakamura, T Shimura, ... Applied Physics Letters 104 (12), 2014 | 19 | 2014 |
| Enhancing biological relevance of a weighted gene co-expression network for functional module identification S Prom-On, A Chanthaphan, JH Chan, A Meechai Journal of Bioinformatics and Computational Biology 9 (01), 111-129, 2011 | 16 | 2011 |
| Insight into metal-enhanced oxidation using barium on 4H-SiC surfaces A Chanthaphan, Y Katsu, T Hosoi, T Shimura, H Watanabe Japanese Journal of Applied Physics 55 (12), 120303, 2016 | 14 | 2016 |
| Impact of Interface Defect Passivation on Conduction Band Offset at SiO2/4H-SiC Interface T Hosoi, T Kirino, A Chanthaphan, Y Uenishi, D Ikeguchi, A Yoshigoe, ... Materials Science Forum 717, 721-724, 2012 | 10 | 2012 |
| Impact of stacked AlON/SiO2 gate dielectrics for SiC power devices H Watanabe, T Kirino, Y Uenishi, A Chanthaphan, A Yoshigoe, Y Teraoka, ... ECS Transactions 35 (2), 265, 2011 | 10 | 2011 |
| Structure and Surface Morphology of Thermal SiO2 Grown on 4H-SiC by Metal-Enhanced Oxidation Using Barium A Chanthaphan, Y Katsu, T Hosoi, T Shimura, H Watanabe Materials Science Forum 897, 340-343, 2017 | 8 | 2017 |
| Cathodoluminescence study of radiative interface defects in thermally grown SiO2/4H-SiC (0001) structures Y Fukushima, A Chanthaphan, T Hosoi, T Shimura, H Watanabe Applied Physics Letters 106 (26), 2015 | 7 | 2015 |
| Materials Science Forum H Watanabe, T Hosoi, T Kirino, Y Uenishi, A Chanthaphan, A Yoshigoe, ... Trans Tech Publications Ltd, 697-702, 2012 | 6 | 2012 |
| Gate stack technologies for SiC power MOSFETs H Watanabe, T Hosoi, T Kirino, Y Uenishi, A Chanthaphan, D Ikeguchi, ... ECS Transactions 41 (3), 77, 2011 | 5 | 2011 |
| Improvement of SiO2/4H-SiC Interface Quality by Post-Oxidation Annealing in N2 at High-Temperatures A Chanthaphan, YH Cheng, T Hosoi, T Shimura, H Watanabe Materials Science Forum 858, 627-630, 2016 | 3 | 2016 |
| Study on Bias-temperature Instability in 4H-SiC Metal-oxide-semiconductor Devices A Chanthaphan | 3 | 2014 |
| Synchrotron Radiation Photoelectron Spectroscopy Study of Thermally Grown Oxides on 4H-SiC (0001) Si-face and (000-1) C-face Substrates H Watanabe, T Hosoi, T Kirino, Y Uenishi, A Chanthaphan, A Yoshigoe, ... Materials Science Forum 717, 697-702, 2012 | 3 | 2012 |
| Degradation of SiO2/SiC Interface Properties due to Mobile Ions Intrinsically Generated by High-Temperature Hydrogen Annealing A Chanthaphan, T Hosoi, Y Nakano, T Nakamura, T Shimura, ... Materials Science Forum 778, 541-544, 2014 | 2 | 2014 |
| Identifying Functional Modules Using MST-Based Weighted Gene Co-Expression Networks A Chanthaphan, S Prom-on, A Meechai, J Chan 2009 Ninth IEEE International Conference on Bioinformatics and …, 2009 | 2 | 2009 |
| Improvement of physical and electrical properties in SiC-MOS devices using deposited insulators on barium-enhanced thermal oxides A Chanthaphan, T Hosoi, T Shimura, H Watanabe JSAP Annual Meetings Extended Abstracts The 77th JSAP Autumn Meeting 2016 …, 2016 | | 2016 |
| Cathodoluminescence Study of SiO2/4H-SiC Structures Treated with High-Temperature Post-Oxidation Annealing A Chanthaphan, Y Fukushima, K Yamamoto, M Aketa, H Asahara, ... Materials Science Forum 858, 445-448, 2016 | | 2016 |
