Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET N Loubet, T Hook, P Montanini, CW Yeung, S Kanakasabapathy, ...
2017 symposium on VLSI technology, T230-T231, 2017
793 2017 14nm ferroelectric FinFET technology with steep subthreshold slope for ultra low power applications Z Krivokapic, U Rana, R Galatage, A Razavieh, A Aziz, J Liu, J Shi, ...
2017 IEEE International Electron Devices Meeting (IEDM), 15.1. 1-15.1. 4, 2017
265 2017 A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels R Xie, P Montanini, K Akarvardar, N Tripathi, B Haran, S Johnson, T Hook, ...
2016 IEEE international electron devices meeting (IEDM), 2.7. 1-2.7. 4, 2016
175 2016 Channel geometry impact and narrow sheet effect of stacked nanosheet CW Yeung, J Zhang, R Chao, O Kwon, R Vega, G Tsutsui, X Miao, ...
2018 IEEE international electron devices meeting (IEDM), 28.6. 1-28.6. 4, 2018
78 2018 Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states RV Galatage, DM Zhernokletov, H Dong, B Brennan, CL Hinkle, ...
Journal of Applied Physics 116 (1), 2014
77 2014 Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors RV Galatage, H Dong, DM Zhernokletov, B Brennan, CL Hinkle, ...
Applied Physics Letters 99 (17), 2011
64 2011 High-k metal gate fundamental learning and multi-Vt options for stacked nanosheet gate-all-around transistor J Zhang, T Ando, CW Yeung, M Wang, O Kwon, R Galatage, R Chao, ...
2017 IEEE International Electron Devices Meeting (IEDM), 22.1. 1-22.1. 4, 2017
60 2017 Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors RV Galatage, H Dong, DM Zhernokletov, B Brennan, CL Hinkle, ...
Applied Physics Letters 102 (13), 2013
51 2013 Multilevel Switching in Forming-Free Resistive Memory Devices With Atomic Layer Deposited Nanolaminate B Chakrabarti, RV Galatage, EM Vogel
IEEE electron device letters 34 (7), 867-869, 2013
48 2013 Indium diffusion through high-k dielectrics in high-k/InP stacks H Dong, W Cabrera, R Galatage, S KC, B Brennan, X Qin, S McDonnell, ...
Applied Physics Letters 103 (6), 2013
47 2013 Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO2 gate stacks CL Hinkle, RV Galatage, RA Chapman, EM Vogel, HN Alshareef, ...
Applied Physics Letters 96 (10), 2010
39 2010 Remote phonon and surface roughness limited universal electron mobility of In0. 53Ga0. 47As surface channel MOSFETs AM Sonnet, RV Galatage, PK Hurley, E Pelucchi, K Thomas, A Gocalinska, ...
Microelectronic engineering 88 (7), 1083-1086, 2011
34 2011 Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53) PK Hurley, E O'Connor, S Monaghan, R Long, A O'Mahony, IM Povey, ...
ECS transactions 25 (6), 113, 2009
33 2009 Selective GeOx -scavenging from interfacial layer on Si1−x Gex channel for high mobility Si/Si1−x Gex CMOS application CH Lee, H Kim, P Jamison, RG Southwick, S Mochizuki, K Watanabe, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
32 2016 Chemical and electrical characterization of the HfO2/InAlAs interface B Brennan, RV Galatage, K Thomas, E Pelucchi, PK Hurley, J Kim, ...
Journal of Applied Physics 114 (10), 2013
25 2013 A comparative study of strain and Ge content in Si1−x Gex channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs CH Lee, S Mochizuki, RG Southwick, J Li, X Miao, R Bao, T Ando, ...
2017 IEEE International Electron Devices Meeting (IEDM), 37.2. 1-37.2. 4, 2017
23 2017 Dipole controlled metal gate with hybrid low resistivity cladding for gate-last CMOS with low Vt CL Hinkle, RV Galatage, RA Chapman, EM Vogel, HN Alshareef, ...
2010 Symposium on VLSI Technology, 183-184, 2010
21 2010 The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces T Kent, K Tang, V Chobpattana, MA Negara, M Edmonds, W Mitchell, ...
The Journal of Chemical Physics 143 (16), 2015
19 2015 Surface and interfacial reaction study of InAs (100)-crystalline oxide interface DM Zhernokletov, P Laukkanen, H Dong, RV Galatage, B Brennan, ...
Applied Physics Letters 102 (21), 2013
15 2013 Gate-last TiN/HfO2 band edge effective work functions using low-temperature anneals and selective cladding to control interface composition CL Hinkle, RV Galatage, RA Chapman, EM Vogel, HN Alshareef, ...
Applied Physics Letters 100 (15), 2012
15 2012