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Daniel Seidlitz
Daniel Seidlitz
Verified email at win.tu-berlin.de
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Year
High-power high-brightness semiconductor lasers based on novel waveguide concepts
D Bimberg, K Posilovic, V Kalosha, T Kettler, D Seidlitz, VA Shchukin, ...
Novel In-Plane Semiconductor Lasers IX 7616, 321-334, 2010
382010
Tilted wave lasers: A way to high brightness sources of light
V Shchukin, N Ledentsov, K Posilovic, V Kalosha, T Kettler, D Seidlitz, ...
IEEE Journal of Quantum Electronics 47 (7), 1014-1027, 2011
332011
Nanoscopy of Phase Separation in InxGa1–xN Alloys
Y Abate, D Seidlitz, A Fali, S Gamage, V Babicheva, VS Yakovlev, ...
ACS Applied Materials & Interfaces 8 (35), 23160-23166, 2016
192016
10.7 W peak power picosecond pulses from high-brightness photonic band crystal laser diode
S Riecke, K Posilovic, T Kettler, D Seidlitz, VA Shchukin, NN Ledentsov, ...
Electronics letters 46 (20), 1, 2010
162010
Photovoltaic solar module having a polyurethane frame
H Ehbing, F Schauseil, A Hoffmann, D Seidlitz
US Patent 8,381,466, 2013
122013
Modeling of photonic-crystal-based high-power high-brightness semiconductor lasers
V Shchukin, N Ledentsov, V Kalosha, T Kettler, K Posilovic, D Seidlitz, ...
Physics and Simulation of Optoelectronic Devices XVIII 7597, 274-291, 2010
92010
Kinetically stabilized high-temperature InN growth
GB Cross, Z Ahmad, D Seidlitz, M Vernon, N Dietz, D Deocampo, ...
Journal of Crystal Growth 536, 125574, 2020
82020
Method for producing soft to semi-rigid polyurethane integral foamed materials
N Eisen, D Seidlitz
US Patent 6,590,003, 2003
82003
Strong Near-Field Light–Matter Interaction in Plasmon-Resonant Tip-Enhanced Raman Scattering in Indium Nitride
E Poliani, D Seidlitz, M Ries, SJ Choi, JS Speck, A Hoffmann, MR Wagner
The Journal of Physical Chemistry C 124 (51), 28178-28185, 2020
72020
Effect of AlN buffer layers on the structural and optoelectronic properties of InN/AlN/Sapphire heterostructures grown by MEPA-MOCVD
IS MK, D Seidlitz, A Fali, B Cross, Y Abate, N Dietz
Fifteenth International Conference on Solid State Lighting and LED-based …, 2016
62016
Surface and optical properties of indium-rich InGaN layers grown on sapphire by migration-enhanced plasma assisted metal organic chemical vapor deposition
C Zhang, Y Li, Y Qian, Y Liang, DN Talwar, SY Huang, Q Li, D Seidlitz, ...
Materials Research Express 6 (1), 016407, 2018
52018
Nanoscale InN clusters and compositional inhomogeneities in InGaN epitaxial layers quantified by tip-enhanced Raman scattering
D Seidlitz, E Poliani, M Ries, A Hoffmann, MR Wagner
Applied Physics Letters 118 (16), 2021
42021
Optoelectronic and structural properties of InGaN nanostructures grown by plasma-assisted MOCVD
D Seidlitz, MKI Senevirathna, Y Abate, A Hoffmann, N Dietz
Fourteenth International Conference on Solid State Lighting and LED-based …, 2015
42015
Tilted waveguide and PBC lasers: Novel cavity designs for narrow far-fields and high brightness
D Bimberg, K Posilovic, V Kalosha, T Kettler, D Seidlitz, VA Shchukin, ...
2010 23rd Annual Meeting of the IEEE Photonics Society, 475-476, 2010
22010
Growth and characterization of InN and In-rich InGaN alloys by migration-enhanced plasma-assisted MOCVD
D Seidlitz
PQDT-Global, 2019
12019
Impact of nanoscale fluctuations and cap-layer thickness in buried InGaN single quantum wells probed by tip-enhanced Raman scattering
M Ries, E Poliani, F Nippert, D Seidlitz, LTH Greif, I Koslow, J Bläsing, ...
Journal of Applied Physics 133 (9), 2023
2023
P-23 Understanding electrical conduction in MEPA-MOCVD grown InN
B Cross, A Kozhanov, Z Ahmad, M Vernon, D Seidlitz, C Cooper, A Dryer, ...
2021
Infrared nanoscopy of In-rich InGaN epilayers (Conference Presentation)
D Seidlitz, A Fali, ISM Kankanamge, D Alden, R Collazo, A Hoffmann, ...
Fifteenth International Conference on Solid State Lighting and LED-based …, 2016
2016
processo para preparaÇço de corpos de poliuretano macios atÉ semi-rÍgidos, bem como partes moldadas assim obtidas.
N Eisen, D Seidlitz
2011
Photovoltaisches solarmodul
H Ehbing, F Schauseil, A Hoffmann, D Seidlitz
2009
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