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Takahiro Kawamura
Takahiro Kawamura
Bestätigte E-Mail-Adresse bei mach.mie-u.ac.jp
Titel
Zitiert von
Zitiert von
Jahr
Prediction of oxidation behavior of near-α titanium alloys
T Kitashima, T Kawamura
Scripta Materialia 124, 56-58, 2016
402016
Thermal conductivity of SiC calculated by molecular dynamics
T Kawamura, D Hori, Y Kangawa, K Kakimoto, M Yoshimura, Y Mori
Japanese journal of applied physics 47 (12R), 8898, 2008
342008
Effect of water impurity in CsLiB6O10 crystals on bulk laser-induced damage threshold and transmittance in the ultraviolet region
T Kawamura, M Yoshimura, Y Honda, M Nishioka, Y Shimizu, Y Kitaoka, ...
Applied optics 48 (9), 1658-1662, 2009
332009
Investigation of thermal conductivity of GaN by molecular dynamics
T Kawamura, Y Kangawa, K Kakimoto
Journal of crystal growth 284 (1-2), 197-202, 2005
322005
Investigation of the thermal conductivity of a fullerene peapod by molecular dynamics simulation
T Kawamura, Y Kangawa, K Kakimoto
Journal of crystal growth 310 (7-9), 2301-2305, 2008
232008
An investigation of thermal conductivity of nitride-semiconductor nanostructures by molecular dynamics simulation
T Kawamura, Y Kangawa, K Kakimoto
Journal of crystal growth 298, 251-253, 2007
172007
Estimation of growth rate in unidirectionally solidified multicrystalline silicon by the growth-induced striation method
RB Ganesh, H Matsuo, T Kawamura, Y Kangawa, K Arafune, Y Ohshita, ...
Journal of crystal growth 310 (11), 2697-2701, 2008
132008
Investigation of thermal conductivity of nitride mixed crystals and superlattices by molecular dynamics
T Kawamura, Y Kangawa, K Kakimoto
physica status solidi c 3 (6), 1695-1699, 2006
132006
Molecular beam epitaxy growth of GaN under Ga-rich conditions investigated by molecular dynamics simulation
T Kawamura, H Hayashi, T Miki, Y Suzuki, Y Kangawa, K Kakimoto
Japanese Journal of Applied Physics 53 (5S1), 05FL08, 2014
122014
Crystal growth of CsLiB6O10 in a dry atmosphere and from a stoichiometric melt composition
T Kawamura, M Yoshimura, Y Shimizu, M Nishioka, Y Fukushima, ...
Journal of crystal growth 312 (8), 1118-1121, 2010
112010
Structural Analysis of Carbon-Added Na–Ga Melts in Na Flux GaN Growth by First-Principles Calculation
T Kawamura, H Imabayashi, Y Yamada, M Maruyama, M Imade, ...
Japanese Journal of Applied Physics 52 (8S), 08JA04, 2013
102013
Mechanism for enhanced single-crystal GaN growth in the C-assisted Na-flux method
T Kawamura, H Imabayashi, M Maruyama, M Imade, M Yoshimura, Y Mori, ...
Applied Physics Express 9 (1), 015601, 2015
92015
First‐principles investigation of the GaN growth process in carbon‐added Na‐flux method
T Kawamura, H Imabayashi, M Maruyama, M Imade, M Yoshimura, Y Mori, ...
physica status solidi (b) 252 (5), 1084-1088, 2015
92015
Absolute surface energies of oxygen-adsorbed GaN surfaces
T Kawamura, T Akiyama, A Kitamoto, M Imanishi, M Yoshimura, Y Mori, ...
Journal of Crystal Growth 549, 125868, 2020
82020
Growth of bulk nitrides from a Na flux
Y Mori, M Imade, M Maruyama, M Yoshimura, H Yamane, F Kawamura, ...
Handbook of Crystal Growth, 505-533, 2015
72015
Molecular dynamics simulation of diffusion behavior of N atoms on the growth surface in GaN solution growth
T Kawamura, Y Kangawa, K Kakimoto, Y Suzuki
Journal of crystal growth 351 (1), 32-36, 2012
72012
Molecular dynamics simulation of thermal conductivity of GaN/AlN quantum dot superlattices
T Kawamura, Y Kangawa, K Kakimoto
physica status solidi c 4 (7), 2289-2292, 2007
62007
Strain energy analysis of screw dislocations in 4H-SiC by molecular dynamics
T Kawamura, M Mizutani, Y Suzuki, Y Kangawa, K Kakimoto
Japanese journal of applied physics 55 (3), 031301, 2016
52016
Molecular dynamics simulation of graphene growth by surface decomposition of 6H-SiC (0001) and
R Iguchi, T Kawamura, Y Suzuki, M Inoue, Y Kangawa, K Kakimoto
Japanese journal of applied physics 53 (6), 065601, 2014
52014
Investigation of gan solution growth processes on ga-and n-faces by molecular dynamics simulation
T Kawamura, Y Kangawa, K Kakimoto, S Kotake, Y Suzuki
Japanese journal of applied physics 51 (1S), 01AF06, 2012
52012
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