Massimo Rudan
Massimo Rudan
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Zitiert von
Zitiert von
A new discretization strategy of the semiconductor equations comprising momentum and energy balance
A Forghieri, R Guerrieri, P Ciampolini, A Gnudi, M Rudan, G Baccarani
IEEE transactions on computer-aided design of integrated circuits and …, 1988
Multi‐dimensional discretization scheme for the hydrodynamic model of semiconductor devices
M Rudan, F Odeh
COMPEL-The international journal for computation and mathematics in …, 1986
Electron and hole mobility in silicon at large operating temperatures. I. Bulk mobility
S Reggiani, M Valdinoci, L Colalongo, M Rudan, G Baccarani, AD Stricker, ...
IEEE Transactions on Electron devices 49 (3), 490-499, 2002
HFIELDS: A highly flexible 2-D semiconductor-device analysis program
G Baccarani
Proc. of the NASECODE IV Conference, 3-12, 1985
Modeling electron and hole transport with full-band structure effects by means of the spherical-harmonics expansion of the BTE
MC Vecchi, M Rudan
IEEE Transactions on Electron Devices 45 (1), 230-238, 1998
Low-field electron mobility model for ultrathin-body SOI and double-gate MOSFETs with extremely small silicon thicknesses
S Reggiani, E Gnani, A Gnudi, M Rudan, G Baccarani
IEEE Transactions on Electron Devices 54 (9), 2204-2212, 2007
Band-structure effects in ultrascaled silicon nanowires
E Gnani, S Reggiani, A Gnudi, P Parruccini, R Colle, M Rudan, ...
IEEE Transactions on Electron Devices 54 (9), 2243-2254, 2007
Physics of semiconductor devices
M Rudan
Springer, 2015
Numerical solution of the hydrodynamic model for a one‐dimensional semiconductor device
M Rudan, F Odeh, J White
COMPEL-The international journal for computation and mathematics in …, 1987
Analytical IGFET model including drift and diffusion currents
G Baccarani, M Rudan, G Spadini
IEE Journal on Solid-State and Electron Devices 2 (2), 62-68, 1978
Investigation of non‐local transport phenomena in small semiconductor devices
A Gnudi, F Odeh, M Rudan
European Transactions on Telecommunications 1 (3), 307-312, 1990
Electronic, optical and thermal properties of the hexagonal and rocksalt-like Ge2Sb2Te5 chalcogenide from first-principle calculations
T Tsafack, E Piccinini, BS Lee, E Pop, M Rudan
Journal of Applied Physics 110 (6), 2011
Coherent electron transport in bent cylindrical surfaces
A Marchi, S Reggiani, M Rudan, A Bertoni
Physical Review B 72 (3), 035403, 2005
Analysis of conductivity degradation in gold/platinum-doped silicon
M Valdinoci, L Colalongo, A Pellegrini, M Rudan
IEEE Transactions on Electron Devices 43 (12), 2269-2275, 1996
Physical models for numerical device simulation
G Baccarani, M Rudan, R Guerrieri, P Ciampolini
Process and device modeling, 107-158, 1986
Impact ionization within the hydrodynamic approach to semiconductor transport
W Quade, E Schöll, M Rudan
Solid-state electronics 36 (10), 1493-1505, 1993
Investigating the performance limits of silicon-nanowire and carbon-nanotube FETs
A Marchi, E Gnani, S Reggiani, M Rudan, G Baccarani
Solid-State Electronics 50 (1), 78-85, 2006
Impact-ionization in silicon at large operating temperature
M Valdinoci, D Ventura, MC Vecchi, M Rudan, G Baccarani, F Illien, ...
1999 International Conference on Simulation of Semiconductor Processes and …, 1999
Band-structure calculations of SiO/sub 2/by means of Hartree-Fock and density-functional techniques
E Gnani, S Reggiani, R Colle, M Rudan
IEEE Transactions on electron devices 47 (10), 1795-1803, 2000
Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures
S Reggiani, E Gnani, M Rudan, G Baccarani, C Corvasce, D Barlini, ...
IEEE transactions on electron devices 52 (10), 2290-2299, 2005
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