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Kenji Shiraishi
Kenji Shiraishi
名古屋大学　未来材料・システム研究所
Bestätigte E-Mail-Adresse bei imass.nagoya-u.ac.jp
Titel
Zitiert von
Zitiert von
Jahr
Theoretical possibility of stage corrugation in Si and Ge analogs of graphite
K Takeda, K Shiraishi
Physical Review B 50 (20), 14916, 1994
10711994
Visible photoluminescence from oxidized Si nanometer-sized spheres: Exciton confinement on a spherical shell
Y Kanemitsu, T Ogawa, K Shiraishi, K Takeda
Physical Review B 48 (7), 4883, 1993
6621993
A new slab model approach for electronic structure calculation of polar semiconductor surface
K Shiraishi
Journal of the Physical Society of Japan 59 (10), 3455-3458, 1990
4051990
First-Principles Study of Oxide Growth on Si(100) Surfaces and at /Si(100) Interfaces
H Kageshima, K Shiraishi
Physical Review Letters 81 (26), 5936, 1998
2831998
Intrinsic origin of visible light emission from silicon quantum wires: Electronic structure and geometrically restricted exciton
T Ohno, K Shiraishi, T Ogawa
Physical review letters 69 (16), 2400, 1992
2591992
First-principles study of sulfur passivation of GaAs (001) surfaces
T Ohno, K Shiraishi
Physical review B 42 (17), 11194, 1990
2121990
Momentum-matrix-element calculation using pseudopotentials
H Kageshima, K Shiraishi
Physical Review B 56 (23), 14985, 1997
2021997
Universal theory of Si oxidation rate and importance of interfacial Si emission
H Kageshima, K Shiraishi, M Uematsu
Japanese journal of applied physics 38 (9A), L971, 1999
1931999
First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high- dielectrics
N Umezawa, K Shiraishi, T Ohno, H Watanabe, T Chikyow, K Torii, ...
Applied Physics Letters 86 (14), 143507, 2005
1832005
Electronic structure of Si-skeleton materials
K Takeda, K Shiraishi
Physical Review B 39 (15), 11028, 1989
1661989
Oxygen vacancy induced substantial threshold voltage shifts in the Hf-based high-K MISFET with p+ poly-Si gates-A theoretical approach
K Shiraishi, K Yamada, K Torii, Y Akasaka, K Nakajima, M Konno, ...
Japanese Journal of Applied Physics 43 (11A), L1413, 2004
1652004
A massively-parallel electronic-structure calculations based on real-space density functional theory
JI Iwata, D Takahashi, A Oshiyama, T Boku, K Shiraishi, S Okada, ...
Journal of Computational Physics 229 (6), 2339-2363, 2010
1552010
Modified oxygen vacancy induced fermi level pinning model extendable to P-metal pinning
Y Akasaka, G Nakamura, K Shiraishi, N Umezawa, K Yamabe, O Ogawa, ...
Japanese journal of applied physics 45 (12L), L1289, 2006
1452006
A new theoretical approach to adsorption–desorption behavior of Ga on GaAs surfaces
Y Kangawa, T Ito, A Taguchi, K Shiraishi, T Ohachi
Surface science 493 (1-3), 178-181, 2001
1452001
Impact of additional factors in threshold voltage variability of metal/high-k gate stacks and its reduction by controlling crystalline structure and grain size in the metal gates
K Ohmori, T Matsuki, D Ishikawa, T Morooka, T Aminaka, Y Sugita, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
1272008
ON-OFF switching mechanism of resistive–random–access–memories based on the formation and disruption of oxygen vacancy conducting channels
K Kamiya, M Young Yang, SG Park, B Magyari-Köpe, Y Nishi, M Niwa, ...
Applied Physics Letters 100 (7), 073502, 2012
1152012
Mechanism of potential profile formation in silicon single-electron transistors fabricated using pattern-dependent oxidation
S Horiguchi, M Nagase, K Shiraishi, H Kageshima, Y Takahashi, ...
Japanese Journal of Applied Physics 40 (1A), L29, 2001
1092001
Self-diffusion of Si in thermally grown under equilibrium conditions
T Takahashi, S Fukatsu, KM Itoh, M Uematsu, A Fujiwara, H Kageshima, ...
Journal of applied physics 93 (6), 3674-3676, 2003
1032003
Ga adatom diffusion on an As‐stabilized GaAs (001) surface via missing As dimer rows: First‐principles calculation
K Shiraishi
Applied physics letters 60 (11), 1363-1365, 1992
1011992
Electronic structure of silicon-oxygen high polymers
K Takeda, K Shiraishi
Solid state communications 85 (4), 301-305, 1993
941993
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