| 12 W/mm AlGaN-GaN HFETs on silicon substrates JW Johnson, EL Piner, A Vescan, R Therrien, P Rajagopal, JC Roberts, ... IEEE Electron Device Letters 25 (7), 459-461, 2004 | 308 | 2004 |
| Current instabilities in GaN-based devices I Daumiller, D Theron, C Gaquière, A Vescan, R Dietrich, A Wieszt, ... IEEE Electron Device Letters 22 (2), 62-64, 2001 | 199 | 2001 |
| Gallium nitride material devices including an electrode-defining layer and methods of forming the same JW Johnson, RJ Therrien, A Vescan, JD Brown US Patent 7,071,498, 2006 | 180 | 2006 |
| AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon (111) substrates JD Brown, R Borges, E Piner, A Vescan, S Singhal, R Therrien Solid-State Electronics 46 (10), 1535-1539, 2002 | 161 | 2002 |
| Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis R Stoklas, D Gregušová, J Novák, A Vescan, P Kordoš Applied Physics Letters 93 (12), 2008 | 129 | 2008 |
| Diamond surface-channel FET structure with 200 V breakdown voltage P Gluche, A Aleksov, A Vescan, W Ebert, E Kohn IEEE Electron Device Letters 18 (11), 547-549, 1997 | 126 | 1997 |
| Heat-spreading diamond films for GaN-based high-power transistor devices M Seelmann-Eggebert, P Meisen, F Schaudel, P Koidl, A Vescan, H Leier Diamond and Related Materials 10 (3-7), 744-749, 2001 | 109 | 2001 |
| Very high temperature operation of diamond Schottky diode A Vescan, I Daumiller, P Gluche, W Ebert, E Kohn IEEE Electron Device Letters 18 (11), 556-558, 1997 | 97 | 1997 |
| Diamond junction FETs based on δ-doped channels A Aleksov, A Vescan, M Kunze, P Gluche, W Ebert, E Kohn, A Bergmeier, ... Diamond and Related Materials 8 (2-5), 941-945, 1999 | 94 | 1999 |
| Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces B Reuters, H Hahn, A Pooth, B Holländer, U Breuer, M Heuken, H Kalisch, ... Journal of Physics D: Applied Physics 47 (17), 175103, 2014 | 87 | 2014 |
| Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates N Ketteniss, LR Khoshroo, M Eickelkamp, M Heuken, H Kalisch, ... Semiconductor science and technology 25 (7), 075013, 2010 | 87 | 2010 |
| High temperature, high voltage operation of diamond Schottky diode A Vescan, I Daumiller, P Gluche, W Ebert, E Kohn Diamond and related materials 7 (2-5), 581-584, 1998 | 87 | 1998 |
| Recessed-gate enhancement-mode AlGaN/GaN heterostructure field-effect transistors on Si with record DC performance H Hahn, G Lükens, N Ketteniss, H Kalisch, A Vescan Applied Physics Express 4 (11), 114102, 2011 | 85 | 2011 |
| The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices H Yacoub, D Fahle, M Finken, H Hahn, C Blumberg, W Prost, H Kalisch, ... Semiconductor Science and Technology 29 (11), 115012, 2014 | 75 | 2014 |
| P-channel enhancement and depletion mode GaN-based HFETs with quaternary backbarriers H Hahn, B Reuters, A Pooth, B Holländer, M Heuken, H Kalisch, A Vescan IEEE transactions on electron devices 60 (10), 3005-3011, 2013 | 75 | 2013 |
| Material, process, and device development of GaN-based HFETs on silicon substrates JW Johnson, J Gao, JD BROWN, A HANSON, S SINGHAL, R BORGES Proceedings-Electrochemical Society, 405-419, 2004 | 73 | 2004 |
| Diamond diodes and transistors A Aleksov, A Denisenko, M Kunze, A Vescan, A Bergmaier, G Dollinger, ... Semiconductor science and technology 18 (3), S59, 2003 | 71 | 2003 |
| Highly Responsive Flexible Photodetectors Based on MOVPE Grown Uniform Few-Layer MoS2 DS Schneider, A Grundmann, A Bablich, V Passi, S Kataria, H Kalisch, ... Acs Photonics 7 (6), 1388-1395, 2020 | 70 | 2020 |
| Small signal and power measurements of AlGaN/GaN HEMT with SiN passivation JS Lee, A Vescan, A Wieszt, R Dietrich, H Leier, YS Kwon Electronics Letters 37 (2), 130-131, 2001 | 65 | 2001 |
| High-temperature, high-voltage operation of pulse-doped diamond MESFET A Vescan, P Gluche, W Ebert, E Kohn IEEE Electron Device Letters 18 (5), 222-224, 1997 | 65 | 1997 |
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