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Barry O'Sullivan
Barry O'Sullivan
Verified email at imec.be
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Cited by
Year
Ubiquitous relaxation in BTI stressing—New evaluation and insights
B Kaczer, T Grasser, J Roussel, J Martin-Martinez, R O'Connor, ...
2008 IEEE International Reliability Physics Symposium, 20-27, 2008
2952008
Nanocrystalline TiO2 films studied by optical, XRD and FTIR spectroscopy
JY Zhang, IW Boyd, BJ O'sullivan, PK Hurley, PV Kelly, JP Senateur
Journal of Non-Crystalline Solids 303 (1), 134-138, 2002
2232002
Comphy—A compact-physics framework for unified modeling of BTI
G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ...
Microelectronics Reliability 85, 49-65, 2018
1592018
interface properties following rapid thermal processing
BJ O’sullivan, PK Hurley, C Leveugle, JH Das
Journal of Applied Physics 89 (7), 3811-3820, 2001
992001
Crystalline thin‐foil silicon solar cells: where crystalline quality meets thin‐film processing
F Dross, K Baert, T Bearda, J Deckers, V Depauw, O El Daif, I Gordon, ...
Progress in Photovoltaics: Research and Applications 20 (6), 770-784, 2012
972012
Estimation of fixed charge densities in hafnium-silicate gate dielectrics
VS Kaushik, BJ O'Sullivan, G Pourtois, N Van Hoornick, A Delabie, ...
IEEE Transactions on Electron Devices 53 (10), 2627-2633, 2006
892006
Investigation of TiO2-doped HfO2 thin films deposited by photo-CVD
Q Fang, JY Zhang, ZM Wang, JX Wu, BJ O'Sullivan, PK Hurley, ...
Thin Solid Films 428 (1-2), 263-268, 2003
772003
Interface of ultrathin HfO2 films deposited by UV-photo-CVD
Q Fang, JY Zhang, Z Wang, M Modreanu, BJ O'sullivan, PK Hurley, ...
Thin Solid Films 453, 203-207, 2004
732004
Adherence to COPD management guidelines in general practice? A review of the literature
J Sehl, J O’doherty, R O’connor, B O’sullivan, A O’regan
Irish Journal of Medical Science (1971-) 187, 403-407, 2018
542018
Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies
C Dubourdieu, H Roussel, C Jiménez, M Audier, JP Sénateur, S Lhostis, ...
Materials Science and Engineering: B 118 (1-3), 105-111, 2005
502005
Characterisation of HfO2 deposited by photo-induced chemical vapour deposition
Q Fang, JY Zhang, ZM Wang, JX Wu, BJ O'Sullivan, PK Hurley, ...
Thin Solid Films 427 (1-2), 391-396, 2003
462003
Examination of the Si (111) SiO2, Si (110) SiO2, and Si (100) SiO2 interfacial properties following rapid thermal annealing
PK Hurley, BJ O’Sullivan, FN Cubaynes, PA Stolk, FP Widdershoven, ...
Journal of the Electrochemical Society 149 (3), G194, 2002
462002
Passivation of a metal contact with a tunneling layer
X Loozen, JB Larsen, F Dross, M Aleman, T Bearda, BJ O'sullivan, ...
Energy Procedia 21, 75-83, 2012
432012
Impact of Charge trapping on Imprint and its Recovery in HfO2 based FeFET
Y Higashi, N Ronchi, B Kaczer, K Banerjee, SRC McMitchell, ...
2019 IEEE International Electron Devices Meeting (IEDM), 15.6. 1-15.6. 4, 2019
342019
Interface States and P b Defects at the Si (100)/HfO2 Interface
PK Hurley, BJ O’Sullivan, VV Afanas’ev, A Stesmans
Electrochemical and solid-state letters 8 (2), G44, 2004
342004
Analysis of centers at the interface following rapid thermal annealing
PK Hurley, A Stesmans, VV Afanas’ ev, BJ O’sullivan, E O’Callaghan
Journal of Applied Physics 93 (7), 3971-3973, 2003
342003
Effective work function modulation by controlled dielectric monolayer deposition
L Pantisano, T Schram, B O’Sullivan, T Conard, S De Gendt, ...
Applied physics letters 89 (11), 2006
332006
Solving the BEOL compatibility challenge of top-pinned magnetic tunnel junction stacks
J Swerts, E Liu, S Couet, S Mertens, S Rao, W Kim, K Garello, L Souriau, ...
2017 IEEE International Electron Devices Meeting (IEDM), 38.6. 1-38.6. 4, 2017
302017
Low VT CMOS using doped Hf-based oxides, TaC-based Metals and Laser-only Anneal
S Kubicek, T Schram, V Paraschiv, R Vos, M Demand, C Adelmann, ...
2007 IEEE International Electron Devices Meeting, 49-52, 2007
292007
Defect profiling in FEFET Si: HfO2 layers
BJ O'sullivan, V Putcha, R Izmailov, V Afanas' ev, E Simoen, T Jung, ...
Applied Physics Letters 117 (20), 2020
262020
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