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T.M. Smeeton
T.M. Smeeton
Vice President, Research at Envisics
Bestätigte E-Mail-Adresse bei envisics.com - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope
TM Smeeton, MJ Kappers, JS Barnard, ME Vickers, CJ Humphreys
Applied physics letters 83 (26), 5419-5421, 2003
3432003
Optical and microstructural studies of InGaN∕ GaN single-quantum-well structures
DM Graham, A Soltani-Vala, P Dawson, MJ Godfrey, TM Smeeton, ...
Journal of applied physics 97 (10), 2005
2702005
Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering
ME Vickers, MJ Kappers, TM Smeeton, EJ Thrush, JS Barnard, ...
Journal of applied physics 94 (3), 1565-1574, 2003
1502003
In-plane imperfections in GaN studied by x-ray diffraction
ME Vickers, MJ Kappers, R Datta, C McAleese, TM Smeeton, ...
Journal of Physics D: Applied Physics 38 (10A), A99, 2005
1232005
The impact of electron beam damage on the detection of indium-rich localisation centres in InGaN quantum wells using transmission electron microscopy.
TM Smeeton, CJ Humphreys, JS Barnard, MJ Kappers
Journal of materials science 41 (9), 2006
572006
Strong carrier confinement in quantum dots grown by molecular beam epitaxy
M Sénès, KL Smith, TM Smeeton, SE Hooper, J Heffernan
Physical Review B—Condensed Matter and Materials Physics 75 (4), 045314, 2007
462007
Head mounted display using spatial light modulator to move the viewing zone
KH Tam, DJ Montgomery, TM Smeeton
US Patent App. 15/060,957, 2017
452017
Design of a creep resistant nickel base superalloy for power plant applications: Part 3-Experimental results
F Tancret, T Sourmail, MA Yescas, RW Evans, C McAleese, L Singh, ...
Materials Science and Technology 19 (3), 296-302, 2003
452003
Degradation of InGaN∕ GaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings
M Rossetti, TM Smeeton, WS Tan, M Kauer, SE Hooper, J Heffernan, ...
Applied Physics Letters 92 (15), 2008
402008
Continuous-wave operation of InGaN multiple quantum well laser diodes grown by molecular beam epitaxy
M Kauer, SE Hooper, V Bousquet, K Johnson, C Zellweger, JM Barnes, ...
Electronics Letters 41 (13), 739-741, 2005
402005
Analysis of InGaN/GaN single quantum wells by X‐ray scattering and transmission electron microscopy
TM Smeeton, MJ Kappers, JS Barnard, ME Vickers, CJ Humphreys
physica status solidi (b) 240 (2), 297-300, 2003
382003
Semiconductor device and a method of manufacture thereof
TM Smeeton, KL Smith, MX Sénès, SE Hooper
US Patent 8,334,157, 2012
312012
Breath analyser and detection methods
S Rihani, TM Smeeton
US Patent 9,568,465, 2017
292017
Synthesis of widely tunable and highly luminescent zinc nitride nanocrystals
PN Taylor, MA Schreuder, TM Smeeton, AJD Grundy, JAR Dimmock, ...
Journal of Materials Chemistry C 2 (22), 4379-4382, 2014
262014
Deep ultraviolet (UVC) laser for sterilisation and fluorescence applications
EA Boardman, LSW Huang, JJ Robson-Hemmings, TM Smeeton, ...
Sharp technical report, 31, 2012
242012
36‐4: Solution‐Processed Transparent Top Electrode for QD‐LED
HT Hopkin, EA Boardman, TM Smeeton
SID Symposium Digest of Technical Papers 51 (1), 516-519, 2020
232020
Active matrix QD‐LED with top emission structure by UV lithography for RGB patterning
Y Nakanishi, T Takeshita, Y Qu, H Imabayashi, S Okamoto, H Utsumi, ...
Journal of the Society for Information Display 28 (6), 499-508, 2020
222020
Sterilizing apparatus
J Mori, TM Smeeton
US Patent 10,307,495, 2019
212019
AlInGaN light-emitting device
KL Smith, MX Sénès, TM Smeeton, SE Hooper
US Patent 7,858,962, 2010
212010
Touch sensor for display with shield
N Clark, TM Smeeton
US Patent 10,452,201, 2019
192019
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