Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope TM Smeeton, MJ Kappers, JS Barnard, ME Vickers, CJ Humphreys
Applied physics letters 83 (26), 5419-5421, 2003
343 2003 Optical and microstructural studies of InGaN∕ GaN single-quantum-well structures DM Graham, A Soltani-Vala, P Dawson, MJ Godfrey, TM Smeeton, ...
Journal of applied physics 97 (10), 2005
270 2005 Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering ME Vickers, MJ Kappers, TM Smeeton, EJ Thrush, JS Barnard, ...
Journal of applied physics 94 (3), 1565-1574, 2003
150 2003 In-plane imperfections in GaN studied by x-ray diffraction ME Vickers, MJ Kappers, R Datta, C McAleese, TM Smeeton, ...
Journal of Physics D: Applied Physics 38 (10A), A99, 2005
123 2005 The impact of electron beam damage on the detection of indium-rich localisation centres in InGaN quantum wells using transmission electron microscopy. TM Smeeton, CJ Humphreys, JS Barnard, MJ Kappers
Journal of materials science 41 (9), 2006
57 2006 Strong carrier confinement in quantum dots grown by molecular beam epitaxy M Sénès, KL Smith, TM Smeeton, SE Hooper, J Heffernan
Physical Review B—Condensed Matter and Materials Physics 75 (4), 045314, 2007
46 2007 Head mounted display using spatial light modulator to move the viewing zone KH Tam, DJ Montgomery, TM Smeeton
US Patent App. 15/060,957, 2017
45 2017 Design of a creep resistant nickel base superalloy for power plant applications: Part 3-Experimental results F Tancret, T Sourmail, MA Yescas, RW Evans, C McAleese, L Singh, ...
Materials Science and Technology 19 (3), 296-302, 2003
45 2003 Degradation of InGaN∕ GaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings M Rossetti, TM Smeeton, WS Tan, M Kauer, SE Hooper, J Heffernan, ...
Applied Physics Letters 92 (15), 2008
40 2008 Continuous-wave operation of InGaN multiple quantum well laser diodes grown by molecular beam epitaxy M Kauer, SE Hooper, V Bousquet, K Johnson, C Zellweger, JM Barnes, ...
Electronics Letters 41 (13), 739-741, 2005
40 2005 Analysis of InGaN/GaN single quantum wells by X‐ray scattering and transmission electron microscopy TM Smeeton, MJ Kappers, JS Barnard, ME Vickers, CJ Humphreys
physica status solidi (b) 240 (2), 297-300, 2003
38 2003 Semiconductor device and a method of manufacture thereof TM Smeeton, KL Smith, MX Sénès, SE Hooper
US Patent 8,334,157, 2012
31 2012 Breath analyser and detection methods S Rihani, TM Smeeton
US Patent 9,568,465, 2017
29 2017 Synthesis of widely tunable and highly luminescent zinc nitride nanocrystals PN Taylor, MA Schreuder, TM Smeeton, AJD Grundy, JAR Dimmock, ...
Journal of Materials Chemistry C 2 (22), 4379-4382, 2014
26 2014 Deep ultraviolet (UVC) laser for sterilisation and fluorescence applications EA Boardman, LSW Huang, JJ Robson-Hemmings, TM Smeeton, ...
Sharp technical report, 31, 2012
24 2012 36‐4: Solution‐Processed Transparent Top Electrode for QD‐LED HT Hopkin, EA Boardman, TM Smeeton
SID Symposium Digest of Technical Papers 51 (1), 516-519, 2020
23 2020 Active matrix QD‐LED with top emission structure by UV lithography for RGB patterning Y Nakanishi, T Takeshita, Y Qu, H Imabayashi, S Okamoto, H Utsumi, ...
Journal of the Society for Information Display 28 (6), 499-508, 2020
22 2020 Sterilizing apparatus J Mori, TM Smeeton
US Patent 10,307,495, 2019
21 2019 AlInGaN light-emitting device KL Smith, MX Sénès, TM Smeeton, SE Hooper
US Patent 7,858,962, 2010
21 2010 Touch sensor for display with shield N Clark, TM Smeeton
US Patent 10,452,201, 2019
19 2019