| Challenges and opportunities in applying grapho-epitaxy DSA lithography to metal cut and contact/via applications Y Ma, JA Torres, G Fenger, Y Granik, J Ryckaert, G Vanderberghe, ... 30th European Mask and Lithography Conference 9231, 2014 | 57 | 2014 |
| Demonstration of high performance TFTs on silicon-on-glass (SiOG) substrate DF Dawson-Elli, CAK Williams, JG Couillard, JS Cites, RG Manley, ... ECS Transactions 8 (1), 223, 2007 | 36 | 2007 |
| Implementation of templated DSA for via layer patterning at the 7nm node R Gronheid, J Doise, J Bekaert, BT Chan, I Karageorgos, J Ryckaert, ... Alternative Lithographic Technologies VII 9423, 13-22, 2015 | 34 | 2015 |
| Mask 3D effects and compensation for high NA EUV lithography S Raghunathan, G McIntyre, G Fenger, O Wood Extreme Ultraviolet (EUV) Lithography IV 8679, 334-346, 2013 | 30 | 2013 |
| Flare in extreme ultraviolet lithography: metrology, out-of-band radiation, fractal point-spread function, and flare map calibration GF Lorusso, F Van Roey, E Hendrickx, G Fenger, M Lam, C Zuniga, ... Journal of Micro/Nanolithography, MEMS and MOEMS 8 (4), 041505-041505-6, 2009 | 28 | 2009 |
| High-precision contouring from SEM image in 32-nm lithography and beyond H Shindo, A Sugiyama, H Komuro, Y Hojo, R Matsuoka, JL Sturtevant, ... Design for Manufacturability through Design-Process Integration III 7275 …, 2009 | 28 | 2009 |
| Extending SMO into the lens pupil domain MK Sears, G Fenger, J Mailfert, B Smith Optical Microlithography XXIV 7973, 449-457, 2011 | 22 | 2011 |
| High-accuracy OPC-modeling by using advanced CD-SEM based contours in the next-generation lithography D Hibino, H Shindo, Y Abe, Y Hojyo, G Fenger, T Do, I Kusnadi, ... Metrology, Inspection, and Process Control for Microlithography XXIV 7638 …, 2010 | 21 | 2010 |
| N7 logic via patterning using templated DSA: implementation aspects J Bekaert, J Doise, R Gronheid, J Ryckaert, G Vandenberghe, G Fenger, ... Photomask Japan 2015: Photomask and Next-Generation Lithography Mask …, 2015 | 20 | 2015 |
| Physical verification and manufacturing of contact/via layers using grapho-epitaxy DSA processes JA Torres, K Sakajiri, D Fryer, Y Granik, Y Ma, P Krasnova, G Fenger, ... Design-Process-Technology Co-optimization for Manufacturability VIII 9053 …, 2014 | 20 | 2014 |
| High-accuracy optical proximity correction modeling using advanced critical dimension scanning electron microscope-based contours in next-generation lithography D Hibino, H Shindo, Y Abe, Y Hojyo, G Fenger, T Do, I Kusnadi, ... Journal of Micro-Nanolithography MEMS and MOEMS 10 (1), 013012, 2011 | 18 | 2011 |
| Development of integrated electronics on silicon-on-glass (SiOG) substrate R Manley, G Fenger, P Meller, K Hirschman, CAK Williams, D Dawson-Elli, ... ECS Transactions 16 (9), 371, 2008 | 16 | 2008 |
| Calibration and application of a DSA compact model for graphoepitaxy hole processes using contour-based metrology G Fenger, A Burbine, JA Torres, Y Ma, Y Granik, P Krasnova, ... Photomask Technology 2014 9235, 472-483, 2014 | 15 | 2014 |
| Exploring alternative EUV mask absorber for iN5 self-aligned block and contact layers R Sejpal, V Philipsen, A Armeanu, CI Wei, W Gillijns, N Lafferty, G Fenger, ... Photomask Technology 2019 11148, 265-276, 2019 | 14 | 2019 |
| Using machine learning in the physical modeling of lithographic processes K Adam, S Ganjugunte, C Moyroud, K Shchehlik, M Lam, A Burbine, ... Design-Process-Technology Co-optimization for Manufacturability XIII 10962 …, 2019 | 14 | 2019 |
| Directed self-assembly (DSA) grapho-epitaxy template generation with immersion lithography Y Ma, J Lei, JA Torres, L Hong, J Word, G Fenger, A Tritchkov, ... Alternative Lithographic Technologies VII 9423, 23-33, 2015 | 14 | 2015 |
| Probability prediction of EUV process failure due to resist-exposure stochastic: applications of Gaussian random fields excursions and Rice's formula A Latypov, G Khaira, G Fenger, J Sturtevant, CI Wei, P De Bisschop Extreme Ultraviolet (EUV) Lithography XI 11323, 140-164, 2020 | 13 | 2020 |
| Gaussian random field EUV stochastic models, their generalizations and lithographically meaningful stochastic metrics A Latypov, G Khaira, G Fenger, S Wang, M Chew, S Shang Extreme Ultraviolet (EUV) Lithography XII 11609, 104-119, 2021 | 12 | 2021 |
| Reduction of systematic defects with machine learning from design to fab Y Ma, L Hong, J Word, F Jiang, V Liubich, L Cao, S Jayaram, D Kwak, ... Advanced Etch Technology for Nanopatterning IX 11329, 12-25, 2020 | 12 | 2020 |
| Predictable etch model using machine learning Y Kim, S Jung, DH Kwak, V Liubich, G Fenger Optical Microlithography XXXII 10961, 14-24, 2019 | 12 | 2019 |
Yuri GranikFellow, Chief Scientist, Siemens AGVerified email at mentor.com
