Fundamentals of silicon carbide technology: growth, characterization, devices and applications T Kimoto, JA Cooper John Wiley & Sons, 2014 | 1529 | 2014 |
Material science and device physics in SiC technology for high-voltage power devices T Kimoto Japanese Journal of Applied Physics 54 (4), 040103, 2015 | 1007 | 2015 |
Step-controlled epitaxial growth of SiC: High quality homoepitaxy H Matsunami, T Kimoto Materials Science and Engineering: R: Reports 20 (3), 125-166, 1997 | 763 | 1997 |
Deep defect centers in silicon carbide monitored with deep level transient spectroscopy T Dalibor, G Pensl, H Matsunami, T Kimoto, WJ Choyke, A Schöner, ... physica status solidi (a) 162 (1), 199-225, 1997 | 513 | 1997 |
Power conversion with SiC devices at extremely high ambient temperatures T Funaki, JC Balda, J Junghans, AS Kashyap, HA Mantooth, F Barlow, ... IEEE Transactions on Power electronics 22 (4), 1321-1329, 2007 | 403 | 2007 |
High performance of high-voltage 4H-SiC Schottky barrier diodes A Itoh, T Kimoto, H Matsunami IEEE Electron Device Letters 16 (6), 280-282, 1995 | 306 | 1995 |
Negative- System of Carbon Vacancy in -SiC NT Son, XT Trinh, LS Løvlie, BG Svensson, K Kawahara, J Suda, ... Physical review letters 109 (18), 187603, 2012 | 276 | 2012 |
High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~ 0) face H Yano, T Hirao, T Kimoto, H Matsunami, K Asano, Y Sugawara IEEE Electron Device Letters 20 (12), 611-613, 1999 | 267 | 1999 |
Reduction of deep levels and improvement of carrier lifetime in n-type 4H-SiC by thermal oxidation T Hiyoshi, T Kimoto Applied Physics Express 2 (4), 041101, 2009 | 265 | 2009 |
Performance limiting surface defects in SiC epitaxial pn junction diodes T Kimoto, N Miyamoto, H Matsunami IEEE Transactions on Electron Devices 46 (3), 471-477, 1999 | 265 | 1999 |
Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation K Danno, D Nakamura, T Kimoto Applied physics letters 90 (20), 2007 | 245 | 2007 |
Growth mechanism of 6H‐SiC in step‐controlled epitaxy T Kimoto, H Nishino, WS Yoo, H Matsunami Journal of applied physics 73 (2), 726-732, 1993 | 241 | 1993 |
Interface properties of metal–oxide–semiconductor structures on 4H-SiC {0001} and (1120) formed by N2O oxidation T Kimoto, Y Kanzaki, M Noborio, H Kawano, H Matsunami Japanese journal of applied physics 44 (3R), 1213, 2005 | 234 | 2005 |
Surface kinetics of adatoms in vapor phase epitaxial growth of SiC on 6H‐SiC {0001} vicinal surfaces T Kimoto, H Matsunami Journal of applied physics 75 (2), 850-859, 1994 | 228 | 1994 |
Step bunching mechanism in chemical vapor deposition of 6H–and 4H–SiC {0001} T Kimoto, A Itoh, H Matsunami, T Okano Journal of applied physics 81 (8), 3494-3500, 1997 | 223 | 1997 |
Step‐controlled epitaxial growth of high‐quality SiC layers T Kimoto, A Itoh, H Matsunami physica status solidi (b) 202 (1), 247-262, 1997 | 221 | 1997 |
Defect engineering in SiC technology for high-voltage power devices T Kimoto, H Watanabe Applied Physics Express 13 (12), 120101, 2020 | 195 | 2020 |
Electronic behaviors of high-dose phosphorus-ion implanted 4H–SiC (0001) Y Negoro, K Katsumoto, T Kimoto, H Matsunami Journal of Applied Physics 96 (1), 224-228, 2004 | 195 | 2004 |
Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO/sub 2//SiC MOS system and MOSFET's H Yano, F Katafuchi, T Kimoto, H Matsunami IEEE Transactions on Electron Devices 46 (3), 504-510, 1999 | 191 | 1999 |
Step bunching in chemical vapor deposition of 6H–and 4H–SiC on vicinal SiC (0001) faces T Kimoto, A Itoh, H Matsunami Applied physics letters 66 (26), 3645-3647, 1995 | 191 | 1995 |