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Shoeib Babaee Touski
Shoeib Babaee Touski
在 hut.ac.ir 的电子邮件经过验证
标题
引用次数
引用次数
年份
Structural, electrical, and Rashba properties of monolayer Janus ( =P, As, Sb, and Bi)
S Babaee Touski, N Ghobadi
Physical Review B 103 (16), 165404, 2021
352021
Substrate surface corrugation effects on the electronic transport in graphene nanoribbons
S Babaee Touski, M Pourfath
Applied Physics Letters 103 (14), 2013
232013
Bipolar transistor based on graphane
S Gharekhanlou, B and Tousaki, SB and Khorasani
Journal of Physics: Conference Series 248, 012061, 2010
232010
Vertical strain-induced modification of the electrical and spin properties of monolayer MoSi2X4 (X = N, P, As and Sb)
SB Touski, N Ghobadi
Journal of Physics D: Applied Physics 54 (48), 485302, 2021
222021
Electronic and photocatalytic properties of Antimonene nanosheets
A Kokabi, SB Touski
Physica E: Low-dimensional Systems and Nanostructures 124, 114336, 2020
222020
Field-Effect Transistor Based on MoSi2N4 and WSi2N4 Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties
N Ghobadi, M Hosseini, SB Touski
IEEE Transactions on Electron Devices 69 (2), 863-869, 2022
202022
Electrical and electronic properties of strained mono-layer inte
SB Touski, M Ariapour, M Hosseini
Physica E: Low-dimensional Systems and Nanostructures 118, 113875, 2020
202020
A comparative study of substrates disorder on mobility in the Graphene nanoribbon: Charged impurity, surface optical phonon, surface roughness
SB Touski, M Hosseini
Physica E: Low-dimensional Systems and Nanostructures 116, 113763, 2020
192020
The electrical and spin properties of monolayer and bilayer Janus HfSSe under vertical electrical field
N Ghobadi, SB Touski
Journal of Physics: Condensed Matter 33 (8), 085502, 2020
182020
Strain engineering of spin and Rashba splitting in Group-III monochalcogenide MX (M= Ga, In and X= S, Se, Te) monolayer
M Ariapour, SB Touski
Journal of Magnetism and Magnetic Materials 510, 166922, 2020
172020
Enhanced spin-flip scattering by surface roughness in and armchair nanoribbons
SB Touski, R Roldán, M Pourfath, M Pilar Lopez-Sancho
Physical Review B 95 (16), 165301, 2017
142017
Effects of spin-orbit coupling on the electronic properties of the buckled III–V monolayers
N Hasani, A Rajabi-Maram, SB Touski
Journal of Magnetism and Magnetic Materials 543, 168638, 2022
132022
Interplay between stacking order and in-plane strain on the electrical properties of bilayer antimonene
SB Touski, N Ghobadi
Physica E: Low-dimensional Systems and Nanostructures 126, 114407, 2021
132021
Spin splitting and rashba effect at mono-layer gate in the presence of strain
M Ariapour, SB Touski
Materials Research Express 6 (7), 076402, 2019
132019
Tuning electronic properties of MSb (M= C, Si, Ge and Sn) monolayers by strain engineering
A Rajabi-Maram, N Hasani, SB Touski
Physica E: Low-dimensional Systems and Nanostructures 138, 115065, 2022
112022
Strain engineering of electronic and spin properties in SnX (X= P, As, Sb, Bi) monolayers
N Hasani, A Rajabi-Maram, SB Touski
Journal of Physics and Chemistry of Solids 174, 111131, 2023
102023
The effect of electron-electron interaction induced dephasing on electronic transport in graphene nanoribbons
SS Kahnoj, SB Touski, M Pourfath
Applied Physics Letters 105 (10), 2014
92014
Structural, electrical and optical properties of bilayer SiX (X= N, P, As and Sb)
N Ghobadi, SB Touski
Journal of Physics: Condensed Matter 33 (28), 285502, 2021
82021
Spin relaxation in graphene nanoribbons in the presence of substrate surface roughness
Z Chaghazardi, SB Touski, M Pourfath, R Faez
Journal of Applied Physics 120 (5), 2016
72016
Strain induced modification in electronic properties of monolayer InSb
SB Touski
Superlattices and Microstructures 156, 106979, 2021
62021
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