Terence Mittmann
Terence Mittmann
NaMLab gGmbH
Bestätigte E-Mail-Adresse bei
Zitiert von
Zitiert von
Unveiling the double-well energy landscape in a ferroelectric layer
M Hoffmann, FPG Fengler, M Herzig, T Mittmann, B Max, U Schroeder, ...
Nature 565 (7740), 464-467, 2019
Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering
T Mittmann, M Materano, PD Lomenzo, MH Park, I Stolichnov, M Cavalieri, ...
Advanced Materials Interfaces 6 (11), 1900042, 2019
Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices
MH Park, DH Lee, K Yang, JY Park, GT Yu, HW Park, M Materano, ...
Journal of Materials Chemistry C 8 (31), 10526-10550, 2020
Demonstration of High-speed Hysteresis-free Negative Capacitance in Ferroelectric Hf0.5Zr0.5O2
M Hoffmann, B Max, T Mittmann, U Schroeder, S Slesazeck, T Mikolajick
2018 IEEE International Electron Devices Meeting (IEDM), 31.6. 1-31.6. 4, 2018
Optimizing process conditions for improved Hf1− xZrxO2 ferroelectric capacitor performance
T Mittmann, FPG Fengler, C Richter, MH Park, T Mikolajick, U Schroeder
Microelectronic Engineering 178, 48-51, 2017
Many routes to ferroelectric HfO2: A review of current deposition methods
HA Hsain, Y Lee, M Materano, T Mittmann, A Payne, T Mikolajick, ...
Journal of Vacuum Science & Technology A 40 (1), 2022
Influence of Oxygen Content on the Structure and Reliability of Ferroelectric HfxZr1–xO2 Layers
M Materano, T Mittmann, PD Lomenzo, C Zhou, JL Jones, M Falkowski, ...
ACS Applied Electronic Materials 2 (11), 3618-3626, 2020
Fluid Imprint and Inertial Switching in Ferroelectric La:HfO2 Capacitors
P Buragohain, A Erickson, P Kariuki, T Mittmann, C Richter, PD Lomenzo, ...
ACS applied materials & interfaces 11 (38), 35115-35121, 2019
Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium
U Schroeder, M Materano, T Mittmann, PD Lomenzo, T Mikolajick, ...
Japanese Journal of Applied Physics 58 (SL), SL0801, 2019
Impact of vacancies and impurities on ferroelectricity in PVD-and ALD-grown HfO2 films
L Baumgarten, T Szyjka, T Mittmann, M Materano, Y Matveyev, ...
Applied Physics Letters 118 (3), 2021
Impact of oxygen vacancy content in ferroelectric HZO films on the device performance
T Mittmann, M Materano, SC Chang, I Karpov, T Mikolajick, U Schroeder
2020 IEEE International Electron Devices Meeting (IEDM), 18.4. 1-18.4. 4, 2020
Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1–x)O2 Ultrathin Capacitors
I Stolichnov, M Cavalieri, E Colla, T Schenk, T Mittmann, T Mikolajick, ...
ACS applied materials & interfaces 10 (36), 30514-30521, 2018
Stabilizing the ferroelectric phase in HfO 2-based films sputtered from ceramic targets under ambient oxygen
T Mittmann, M Michailow, PD Lomenzo, J Gärtner, M Falkowski, A Kersch, ...
Nanoscale 13 (2), 912-921, 2021
Enhanced Ferroelectric Polarization in TiN/HfO2/TiN Capacitors by Interface Design
T Szyjka, L Baumgarten, T Mittmann, Y Matveyev, C Schlueter, ...
ACS Applied Electronic Materials 2 (10), 3152-3159, 2020
Next generation ferroelectric memories enabled by hafnium oxide
T Mikolajick, U Schroeder, PD Lomenzo, ET Breyer, H Mulaosmanovic, ...
2019 IEEE International Electron Devices Meeting (IEDM), 15.5. 1-15.5. 4, 2019
A silicon nanowire ferroelectric field‐effect transistor
V Sessi, M Simon, H Mulaosmanovic, D Pohl, M Loeffler, T Mauersberger, ...
Advanced Electronic Materials 6 (4), 1901244, 2020
Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf0.5Zr0.5O2 Films
T Mittmann, T Szyjka, H Alex, MC Istrate, PD Lomenzo, L Baumgarten, ...
physica status solidi (RRL)–Rapid Research Letters 15 (5), 2100012, 2021
Temperature‐Dependent Phase Transitions in HfxZr1‐xO2 Mixed Oxides: Indications of a Proper Ferroelectric Material
U Schroeder, T Mittmann, M Materano, PD Lomenzo, P Edgington, ...
Advanced Electronic Materials 8 (9), 2200265, 2022
Harnessing Phase Transitions in Antiferroelectric ZrO2 Using the Size Effect
PD Lomenzo, M Materano, T Mittmann, P Buragohain, A Gruverman, ...
Advanced Electronic Materials 8 (1), 2100556, 2022
Control of unintentional oxygen incorporation in GaN
S Schmult, F Schubert, S Wirth, A Großer, T Mittmann, T Mikolajick
Journal of Vacuum Science & Technology B 35 (2), 2017
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