| The role of Si during the growth of GaN micro-and nanorods C Tessarek, M Heilmann, E Butzen, A Haab, H Hardtdegen, C Dieker, ... Crystal Growth & Design 14 (3), 1486-1492, 2014 | 88 | 2014 |
| Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer M Heilmann, AM Munshi, G Sarau, M Göbelt, C Tessarek, VT Fauske, ... Nano letters 16 (6), 3524-3532, 2016 | 86 | 2016 |
| Controlling morphology and optical properties of self-catalyzed, mask-free GaN rods and nanorods by metal-organic vapor phase epitaxy C Tessarek, M Bashouti, M Heilmann, C Dieker, I Knoke, E Spiecker, ... Journal of Applied Physics 114 (14), 144304, 2013 | 53 | 2013 |
| Nanoscale characterization of carrier dynamic and surface passivation in InGaN/GaN multiple quantum wells on GaN nanorods W Chen, X Wen, M Latzel, M Heilmann, J Yang, X Dai, S Huang, ... ACS applied materials & interfaces 8 (46), 31887-31893, 2016 | 42 | 2016 |
| Improving the optical properties of self-catalyzed GaN microrods toward whispering gallery mode lasing C Tessarek, R Röder, T Michalsky, S Geburt, H Franke, ... ACS Photonics 1 (10), 990-997, 2014 | 42 | 2014 |
| Efficient nitrogen doping of single-layer graphene accompanied by negligible defect generation for integration into hybrid semiconductor heterostructures G Sarau, M Heilmann, M Bashouti, M Latzel, C Tessarek, S Christiansen ACS applied materials & interfaces 9 (11), 10003-10011, 2017 | 41 | 2017 |
| Growth of GaN Micro-and Nanorods on Graphene-Covered Sapphire: Enabling Conductivity to Semiconductor Nanostructures on Insulating Substrates M Heilmann, G Sarau, M Göbelt, M Latzel, S Sadhujan, C Tessarek, ... Crystal Growth & Design 15 (5), 2079-2086, 2015 | 41 | 2015 |
| Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes A Kumar, M Heilmann, M Latzel, R Kapoor, I Sharma, M Göbelt, ... Scientific reports 6 (1), 1-11, 2016 | 40 | 2016 |
| Defect mediated van der Waals epitaxy of hexagonal boron nitride on graphene M Heilmann, M Bashouti, H Riechert, JMJ Lopes 2D Materials 5 (2), 025004, 2018 | 38 | 2018 |
| Significant performance enhancement of InGaN/GaN nanorod LEDs with multi-layer graphene transparent electrodes by alumina surface passivation M Latzel, P Büttner, G Sarau, K Höflich, M Heilmann, W Chen, X Wen, ... Nanotechnology 28 (5), 055201, 2016 | 37 | 2016 |
| Optical properties of vertical, tilted and in-plane GaN nanowires on different crystallographic orientations of sapphire C Tessarek, S Figge, A Gust, M Heilmann, C Dieker, E Spiecker, ... Journal of Physics D: Applied Physics 47 (39), 394008, 2014 | 31 | 2014 |
| Extended hot carrier lifetimes observed in bulk In0.265±0.02Ga0.735N under high-density photoexcitation Y Zhang, MJY Tayebjee, S Smyth, M Dvořák, X Wen, H Xia, M Heilmann, ... Applied Physics Letters 108 (13), 131904, 2016 | 29 | 2016 |
| Disentangling the effects of nanoscale structural variations on the light emission wavelength of single nano-emitters: InGaN/GaN multiquantum well nano-LEDs for a case study G Sarau, M Heilmann, M Latzel, S Christiansen Nanoscale 6 (20), 11953-11962, 2014 | 29 | 2014 |
| Selective area growth of AlGaN nanopyramid arrays on graphene by metal-organic vapor phase epitaxy AM Munshi, DC Kim, CP Heimdal, M Heilmann, SH Christiansen, ... Applied Physics Letters 113 (26), 263102, 2018 | 19 | 2018 |
| Self-Catalyzed Growth of Vertically Aligned InN Nanorods by Metal–Organic Vapor Phase Epitaxy C Tessarek, S Fladischer, C Dieker, G Sarau, B Hoffmann, M Bashouti, ... Nano Letters 16 (6), 3415-3425, 2016 | 19 | 2016 |
| Growth of boron-doped few-layer graphene by molecular beam epitaxy GV Soares, S Nakhaie, M Heilmann, H Riechert, JMJ Lopes Applied Physics Letters 112 (16), 163103, 2018 | 18 | 2018 |
| Nucleation and growth of atomically thin hexagonal boron nitride on Ni/MgO (111) by molecular beam epitaxy S Nakhaie, M Heilmann, T Krause, M Hanke, JMJ Lopes Journal of Applied Physics 125 (11), 115301, 2019 | 17 | 2019 |
| Carrier-induced refractive index change observed by a whispering gallery mode shift in GaN microrods C Tessarek, R Goldhahn, G Sarau, M Heilmann, S Christiansen New Journal of Physics 17 (8), 083047, 2015 | 17 | 2015 |
| Conduction mechanisms in epitaxial NiO/Graphene gas sensors SS Niavol, M Budde, A Papadogianni, M Heilmann, HM Moghaddam, ... Sensors and Actuators B: Chemical 325, 128797, 2020 | 16 | 2020 |
| Influence of Proximity to Supporting Substrate on van der Waals Epitaxy of Atomically Thin Graphene/Hexagonal Boron Nitride Heterostructures M Heilmann, AS Prikhodko, M Hanke, A Sabelfeld, NI Borgardt, ... ACS Applied Materials & Interfaces 12 (7), 8897-8907, 2020 | 16 | 2020 |
