Iulia Salaoru
Iulia Salaoru
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Zitiert von
Zitiert von
On the electronic transport properties of polycrystalline ZnSe films
GI Rusu, ME Popa, GG Rusu, I Salaoru
Applied Surface Science 218 (1-4), 223-231, 2003
Memory impedance in TiO2 based metal-insulator-metal devices
L Qingjiang, A Khiat, I Salaoru, C Papavassiliou, X Hui, T Prodromakis
Scientific reports 4 (1), 1-6, 2014
Resistive switching of oxygen enhanced TiO2 thin-film devices
I Salaoru, T Prodromakis, A Khiat, C Toumazou
Applied Physics Letters 102 (1), 013506, 2013
Investigation of the Switching Mechanism in TiO2-Based RRAM: A Two-Dimensional EDX Approach
D Carta, I Salaoru, A Khiat, A Regoutz, C Mitterbauer, NM Harrison, ...
Acs Applied Materials & Interfaces 8 (30), 19605-19611, 2016
Physical characterization of CdMnS nanocrystalline thin films grown by vacuum thermal evaporation
F Iacomi, I Salaoru, N Apetroaei, A Vasile, CM Teodorescu, D Macovei
Journal of optoelectronics and advanced materials 8 (1), 266, 2006
Pulse-induced resistive and capacitive switching in TiO2 thin film devices
I Salaoru, A Khiat, Q Li, R Berdan, T Prodromakis
Applied Physics Letters 103 (23), 233513, 2013
Memristive devices as parameter setting elements in programmable gain amplifiers
R Berdan, T Prodromakis, I Salaoru, A Khiat, C Toumazou
Applied Physics Letters 101 (24), 243502, 2012
Coexistence of memory resistance and memory capacitance in TiO2 solid-state devices
I Salaoru, Q Li, A Khiat, T Prodromakis
Nanoscale research letters 9 (1), 1-7, 2014
Inkjet printing of polyvinyl alcohol multilayers for additive manufacturing applications
I Salaoru, Z Zhou, P Morris, GJ Gibbons
Journal of Applied Polymer Science 133 (25), 2016
Origin of the OFF state variability in ReRAM cells
I Salaoru, A Khiat, Q Li, R Berdan, C Papavassiliou, T Prodromakis
Journal of Physics D: Applied Physics 47 (14), 145102, 2014
Additive manufacturing of heat-sensitive polymer melt using a pellet-fed material extrusion
Z Zhou, I Salaoru, P Morris, GJ Gibbons
Additive Manufacturing 24, 552-559, 2018
Electrical bistability in a composite of polymer and barium titanate nanoparticles
I Salaoru, S Paul
Philosophical Transactions of the Royal Society A: Mathematical, Physical …, 2009
Memory devices based on small organic molecules donor-acceptor system
I Salaoru, S Paul
Thin solid films 519 (2), 559-562, 2010
Wettability of aluminum–magnesium alloys on silicon carbide substrates
E Candan, HV Atkinson, Y Turen, I Salaoru, S Candan
Journal of the American Ceramic Society 94 (3), 867-874, 2011
Stochastic switching of TiO 2-based memristive devices with identical initial memory states
Q Li, A Khiat, I Salaoru, H Xu, T Prodromakis
Nanoscale research letters 9 (1), 1-5, 2014
Preparation and structural characterization of thin-film CdTe/CdS heterojunctions
I Salaoru, PA Buffat, D Laub, A Amariei, N Apetroaei, M Rusu
Journal of Optoelectronics and Advanced Materials 8 (3), 936, 2006
On the optical characteristics of CdS thin films deposited by quasi-closed volume technique
M Rusu, I Salaoru, ME Popa, GI Rusu
International Journal of Modern Physics B 18 (09), 1287-1297, 2004
Modelling of current percolation channels in emerging resistive switching elements
MW Shihong, T Prodromakis, I Salaoru, C Toumazou
arXiv preprint arXiv:1206.2746, 2012
Non-volatile memory device-using a blend of polymer and ferroelectric nanoparticles
I Salaoru, S Paul
J. Optoelectron. Adv. Mater 10, 3461-3464, 2008
Electrically re-writable non-volatile memory device-using a blend of sea salt and polymer
I Salaoru, S Paul
Advances in science and technology 54, 486-490, 2008
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