Uedono Akira
Uedono Akira
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Zitiert von
Zitiert von
Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors
SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ...
Nature materials 5 (10), 810-816, 2006
Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO
T Koida, SF Chichibu, A Uedono, A Tsukazaki, M Kawasaki, T Sota, ...
Applied Physics Letters 82 (4), 532-534, 2003
Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar studied by time-resolved photoluminescence and slow …
SF Chichibu, A Uedono, T Onuma, T Sota, BA Haskell, SP DenBaars, ...
Applied Physics Letters 86 (2), 021914, 2005
Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects
SF Chichibu, T Onuma, M Kubota, A Uedono, T Sota, A Tsukazaki, ...
Journal of Applied Physics 99 (9), 093505, 2006
Defects in ZnO thin films grown on substrates probed by a monoenergetic positron beam
A Uedono, T Koida, A Tsukazaki, M Kawasaki, ZQ Chen, SF Chichibu, ...
Journal of Applied Physics 93 (5), 2481-2485, 2003
Radiative and nonradiative processes in strain-free films studied by time-resolved photoluminescence and positron annihilation techniques
T Onuma, SF Chichibu, A Uedono, T Sota, P Cantu, TM Katona, ...
Journal of applied physics 95 (5), 2495-2504, 2004
The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN
SF Chichibu, A Uedono, K Kojima, H Ikeda, K Fujito, S Takashima, M Edo, ...
Journal of applied physics 123 (16), 161413, 2018
Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams
A Uedono, SF Chichibu, ZQ Chen, M Sumiya, R Suzuki, T Ohdaira, ...
Journal of Applied Physics 90 (1), 181-186, 2001
Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN …
SF Chichibu, H Miyake, Y Ishikawa, M Tashiro, T Ohtomo, K Furusawa, ...
Journal of Applied Physics 113 (21), 213506, 2013
Exciton–polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO
SF Chichibu, A Uedono, A Tsukazaki, T Onuma, M Zamfirescu, A Ohtomo, ...
Semiconductor science and technology 20 (4), S67, 2005
Study of oxygen vacancies in by positron annihilation
A Uedono, K Shimayama, M Kiyohara, ZQ Chen, K Yamabe
Journal of applied physics 92 (5), 2697-2702, 2002
Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by -source molecular beam epitaxy
T Koyama, M Sugawara, T Hoshi, A Uedono, JF Kaeding, R Sharma, ...
Applied physics letters 90 (24), 241914, 2007
Brightness enhancement method for a high-intensity positron beam produced by an electron accelerator
N Oshima, R Suzuki, T Ohdaira, A Kinomura, T Narumi, A Uedono, ...
Journal of Applied Physics 103 (9), 094916, 2008
Impact of growth polar direction on the optical properties of GaN grown by metalorganic vapor phase epitaxy
SF Chichibu, A Setoguchi, A Uedono, K Yoshimura, M Sumiya
Applied Physics Letters 78 (1), 28-30, 2001
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
A Uedono, S Ishibashi, S Keller, C Moe, P Cantu, TM Katona, DS Kamber, ...
Journal of Applied Physics 105 (5), 054501, 2009
Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar …
SF Chichibu, K Hazu, Y Ishikawa, M Tashiro, H Namita, S Nagao, K Fujito, ...
Journal of Applied Physics 111 (10), 103518, 2012
Radiative and nonradiative excitonic transitions in nonpolar and polar and (0001) ZnO epilayers
T Koida, SF Chichibu, A Uedono, T Sota, A Tsukazaki, M Kawasaki
Applied physics letters 84 (7), 1079-1081, 2004
Transition and relaxation processes of polyethylene, polypropylene, and polystyrene studied by positron annihilation
A Uedono, T Kawano, S Tanigawa, M Ban, M Kyoto, T Uozumi
Journal of Polymer Science Part B: Polymer Physics 35 (10), 1601-1609, 1997
Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate
K Kojima, S Takashima, M Edo, K Ueno, M Shimizu, T Takahashi, ...
Applied Physics Express 10 (6), 061002, 2017
Vacancy‐type defects and their annealing behaviors in Mg‐implanted GaN studied by a monoenergetic positron beam
A Uedono, S Takashima, M Edo, K Ueno, H Matsuyama, H Kudo, ...
physica status solidi (b) 252 (12), 2794-2801, 2015
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