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Emmanuel Le Boulbar
Emmanuel Le Boulbar
Research associate, Cardiff University
Bestätigte E-Mail-Adresse bei cardiff.ac.uk
Titel
Zitiert von
Zitiert von
Jahr
Pyroelectric materials and devices for energy harvesting applications
RV CR Bowen, J Taylor, E Le Boulbar, D Zabek, A Chauhan
Energy & Environmental Science 7 (12), 3836-3856, 2014
7892014
Micropatterning of flexible and free standing polyvinylidene difluoride (PVDF) films for enhanced pyroelectric energy transformation
D Zabek, J Taylor, EL Boulbar, CR Bowen
Advanced Energy Materials 5 (8), 1401891, 2015
1082015
A modified figure of merit for pyroelectric energy harvesting
CR Bowen, J Taylor, E Le Boulbar, D Zabek, VY Topolov
Materials Letters 138, 243-246, 2015
912015
Pyroelectric energy harvesting for water splitting
M Xie, S Dunn, E Le Boulbar, CR Bowen
International Journal of Hydrogen Energy 42 (37), 23437-23445, 2017
752017
Pure and Nb-doped TiO1. 5 films grown by pulsed-laser deposition for transparent p–n homojunctions
E Le Boulbar, E Millon, J Mathias, C Boulmer-Leborgne, M Nistor, ...
Applied Surface Science 257 (12), 5380-5383, 2011
512011
Optical properties of rare earth-doped TiO2 anatase and rutile thin films grown by pulsed-laser deposition
E Le Boulbar, E Millon, C Boulmer-Leborgne, C Cachoncinlle, B Hakim, ...
Thin Solid Films 553, 13-16, 2014
492014
Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays
ED Le Boulbar, I Girgel, CJ Lewins, PR Edwards, RW Martin, A Šatka, ...
Journal of Applied Physics 114 (9), 2013
482013
Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays
ED Le Boulbar, I Girgel, CJ Lewins, PR Edwards, RW Martin, A Šatka, ...
Journal of Applied Physics 114 (9), 2013
482013
Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices
ED Le Boulbar, CJ Lewins, DWE Allsopp, CR Bowen, PA Shields
Microelectronic Engineering 153, 132-136, 2016
392016
Effect of bias conditions on pressure sensors based on AlGaN/GaN high electron mobility transistor
ED Le Boulbar, MJ Edwards, S Vittoz, G Vanko, K Brinkfeldt, L Rufer, ...
Sensors and Actuators A: Physical 194, 247-251, 2013
392013
Understanding resolution limit of displacement Talbot lithography
PJP Chausse, ED Le Boulbar, SD Lis, PA Shields
Optics express 27 (5), 5918-5930, 2019
312019
Structural and Optical Emission Uniformity of m-Plane InGaN Single Quantum Wells in Core–Shell Nanorods
ED Le Boulbar, PR Edwards, SH Vajargah, I Griffiths, I Gîrgel, PM Coulon, ...
Crystal Growth & Design 16 (4), 1907-1916, 2016
292016
Optical properties and resonant cavity modes in axial InGaN/GaN nanotube microcavities
PM Coulon, JR Pugh, M Athanasiou, G Kusch, ED Le Boulbar, A Sarua, ...
Optics Express 25 (23), 28246-28257, 2017
262017
UV to NIR photon conversion in Nd-doped rutile and anatase titanium dioxide films for silicon solar cell application
E Le Boulbar, E Millon, E Ntsoenzok, B Hakim, W Seiler, ...
Optical Materials 34 (8), 1419-1425, 2012
252012
Structural impact on the nanoscale optical properties of InGaN core-shell nanorods
JT Griffiths, CX Ren, PM Coulon, ED Le Boulbar, CG Bryce, I Girgel, ...
Applied Physics Letters 110 (17), 2017
242017
Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes
I Gîrgel, PR Edwards, E Le Boulbar, PM Coulon, SL Sahonta, ...
Journal of Nanophotonics 10 (1), 016010-016010, 2016
212016
Hybrid Top‐Down/Bottom‐Up Fabrication of Regular Arrays of AlN Nanorods for Deep‐UV Core–Shell LEDs
PM Coulon, G Kusch, ED Le Boulbar, P Chausse, C Bryce, RW Martin, ...
physica status solidi (b) 255 (5), 1700445, 2018
202018
Strong photonic crystal behavior in regular arrays of core-shell and quantum disc InGaN/GaN nanorod light-emitting diodes
CJ Lewins, ED Le Boulbar, SM Lis, PR Edwards, RW Martin, PA Shields, ...
Journal of Applied Physics 116 (4), 2014
202014
Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane
MJ Edwards, ED Le Boulbar, S Vittoz, G Vanko, K Brinkfeldt, L Rufer, ...
physica status solidi c 9 (3‐4), 960-963, 2012
152012
Optical characterization of magnesium incorporation in p-GaN layers for core–shell nanorod light-emitting diodes
I Gîrgel, A Šatka, J Priesol, PM Coulon, ED Le Boulbar, T Batten, ...
Journal of Physics D: Applied Physics 51 (15), 155103, 2018
142018
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