| Direct-current measurements of oxide and interface traps on oxidized silicon A Neugroschel, CT Sah, KM Han, MS Carroll, T Nishida, JT Kavalieros, ... IEEE Transactions on Electron Devices 42 (9), 1657-1662, 1995 | 234 | 1995 |
| Experimental study of the minority-carrier transport at the polysilicon—monosilicon interface A Neugroschel, M Arienzo, Y Komem, RD Isaac IEEE transactions on electron devices 32 (4), 807-816, 1985 | 84 | 1985 |
| Systematic analytical solutions for minority-carrier transport in semiconductors with position-dependent composition, with application to heavily doped silicon JS Park, A Neugroschel, FA Lindholm IEEE transactions on electron devices 33 (2), 240-249, 1986 | 78 | 1986 |
| A methodology for experimentally based determination of gap shrinkage and effective lifetimes in the emitter and base of pn junction solar cells and other pn junction devices FA Lindholm, A Neugroschel, CT Sah, MP Godlewski, HW Brandhorst IEEE Transactions on Electron Devices 24 (4), 402-410, 1977 | 73 | 1977 |
| Degradation of bipolar transistor current gain by hot holes during reverse emitter-base bias stress A Neugroschel, CT Sah, MS Carroll IEEE Transactions on Electron Devices 43 (8), 1286-1290, 1996 | 66 | 1996 |
| A method for determining the emitter and base lifetimes in pn junction diodes A Neugroschel, FA Lindholm, CT Sah IEEE Transactions on Electron Devices 24 (6), 662-671, 1977 | 62 | 1977 |
| Degradation of silicon bipolar junction transistors at high forward current densities MS Carroll, A Neugroschel, CT Sah IEEE Transactions on Electron Devices 44 (1), 110-117, 1997 | 60 | 1997 |
| Minority-carrier transport parameters in n-type silicon CH Wang, K Misiakos, A Neugroschel IEEE transactions on electron devices 37 (5), 1314-1322, 1990 | 60 | 1990 |
| A method for determining energy gap narrowing in highly doped semiconductors A Neugroschel, SC Pao, FA Lindholm IEEE Transactions on Electron Devices 29 (5), 894-902, 1982 | 59 | 1982 |
| Determination of lifetimes and recombination currents in pn junction solar cells, diodes, and transistors A Neugroschel IEEE Transactions on Electron Devices 28 (1), 108-115, 1981 | 52 | 1981 |
| Applications of DCIV method to NBTI characterization A Neugroschel, G Bersuker, R Choi Microelectronics Reliability 47 (9-11), 1366-1372, 2007 | 47 | 2007 |
| Diffusion length and lifetime determination in pn junction solar cells and diodes by forward-biased capacitance measurements A Neugroschel, PJ Chen, SC Pao, FA Lindholm IEEE Transactions on Electron Devices 25 (4), 485-490, 1978 | 45 | 1978 |
| Unifying view of transient responses for determining lifetime and surface recombination velocity in silicon diodes and back-surface-field solar cells, with application to … TW Jung, FA Lindholm, A Neugroschel IEEE Transactions on Electron Devices 31 (5), 588-595, 1984 | 44 | 1984 |
| Method of making quasi-grain boundary-free polycrystalline solar cell structure and solar cell structure obtained thereby FN Gonzalez, A Neugroschel US Patent 4,431,858, 1984 | 44 | 1984 |
| Effect of the Interfacial Layer in High- Gate Stacks on NBTI A Neugroschel, G Bersuker, R Choi, BH Lee IEEE Transactions on Device and Materials Reliability 8 (1), 47-61, 2008 | 42 | 2008 |
| Temperature dependence of minority hole mobility in heavily doped silicon CH Wang, K Misiakos, A Neugroschel Applied physics letters 57 (2), 159-161, 1990 | 41 | 1990 |
| Random telegraphic signals in silicon bipolar junction transistors A Neugroschel, CT Sah, MS Carroll Applied physics letters 66 (21), 2879-2881, 1995 | 38 | 1995 |
| Profiling interface traps in MOS transistors by the DC current-voltage method CT Sah, A Neugroschel, KM Han, JT Kavalieros IEEE Electron Device Letters 17 (2), 72-74, 1996 | 36 | 1996 |
| Minority-carrier transport parameters in degenerate n-type silicon CH Wang, A Neugroschel IEEE electron device letters 11 (12), 576-578, 1990 | 33 | 1990 |
| Minority-carrier lifetime and surface recombination velocity measurement by frequency-domain photoluminescence CH Wang, A Neugroschel IEEE transactions on electron devices 38 (9), 2169-2180, 1991 | 30 | 1991 |
