| Ge Self-Diffusion in Epitaxial Layers NR Zangenberg, JL Hansen, J Fage-Pedersen, AN Larsen Physical Review Letters 87 (12), 125901, 2001 | 186 | 2001 |
| Boron and phosphorus diffusion in strained and relaxed Si and SiGe NR Zangenberg, J Fage-Pedersen, JL Hansen, AN Larsen Journal of Applied Physics 94 (6), 3883-3890, 2003 | 171 | 2003 |
| The EuCARD-2 future magnets European collaboration for accelerator-quality HTS magnets L Rossi, A Badel, M Bajko, A Ballarino, L Bottura, MMJ Dhalle, M Durante, ... IEEE transactions on applied superconductivity 25 (3), 1-7, 2014 | 131 | 2014 |
| Radiation enhanced silicon self-diffusion and the silicon vacancy at high temperatures H Bracht, JF Pedersen, N Zangenberg, AN Larsen, EE Haller, G Lulli, ... Physical review letters 91 (24), 245502, 2003 | 92 | 2003 |
| The EuCARD2 future magnets program for particle accelerator high-field dipoles: Review of results and next steps L Rossi, A Badel, H Bajas, M Bajko, A Ballarino, C Barth, U Betz, L Bottura, ... IEEE Transactions on Applied Superconductivity 28 (3), 1-10, 2017 | 61 | 2017 |
| Status of the demonstrator magnets for the EuCARD-2 future magnets project G Kirby, L Rossi, A Badel, M Bajko, A Ballarino, L Bottura, M Dhallé, ... IEEE transactions on applied superconductivity 26 (3), 1-7, 2016 | 41 | 2016 |
| Conduction cooled high temperature superconducting dipole magnet for accelerator applications N Zangenberg, G Nielsen, N Hauge, BR Nielsen, A Baurichter, ... IEEE transactions on applied superconductivity 22 (3), 4004004-4004004, 2011 | 37 | 2011 |
| Donor level of bond-center hydrogen in germanium L Dobaczewski, KB Nielsen, N Zangenberg, BB Nielsen, AR Peaker, ... Physical Review B 69 (24), 245207, 2004 | 33 | 2004 |
| On-line DLTS investigations of the mono-and di-vacancy in p-type silicon after low temperature electron irradiation N Zangenberg, JJ Goubet, AN Larsen Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002 | 27 | 2002 |
| The effect of biaxial strain on impurity diffusion in Si and SiGe AN Larsen, N Zangenberg, J Fage-Pedersen Materials Science and Engineering: B 124, 241-244, 2005 | 16 | 2005 |
| Bandedge absorption of GaAsN films measured by the photothermal deflection spectroscopy M Beaudoin, ICW Chan, D Beaton, M Elouneg-Jamroz, T Tiedje, ... Journal of crystal growth 311 (7), 1662-1665, 2009 | 15 | 2009 |
| Dipole magnet from high Tc superconductor G Nielsen, N Zangenberg, D Hazelton, N Hauge, BR Nielsen, SP Møller, ... Physics procedia 36, 824-829, 2012 | 13 | 2012 |
| On-line DLTS investigations of vacancy related defects in low-temperature electron irradiated, boron-doped Si NR Zangenberg, A Nylandsted Larsen Applied Physics A 80, 1081-1086, 2005 | 13 | 2005 |
| Boron Diffusion in Strained and Relaxed Si1-xGex NR Zangenberg, J Fage-Pedersen, J Lundsgaard Hansen, ... Defect and Diffusion forum 194, 703-708, 2001 | 11 | 2001 |
| The Meyer–Neldel rule for diffusion in Si and SiGe NR Zangenberg, AN Larsen Physica B: Condensed Matter 340, 780-783, 2003 | 10 | 2003 |
| Activation volume for phosphorus diffusion in silicon and Si0. 93Ge0. 07 Y Zhao, MJ Aziz, NR Zangenberg, AN Larsen Applied Physics Letters 86 (14), 2005 | 9 | 2005 |
| Publisher's Note: Donor level of bond-center hydrogen in germanium [Phys. Rev. B 69, 245207 (2004)] L Dobaczewski, KB Nielsen, N Zangenberg, BB Nielsen, AR Peaker, ... Physical Review B 70 (7), 079901, 2004 | 9 | 2004 |
| How European Big Science organizations and suppliers innovate through public procurement J Li-Ying, J Forneris, SB Korsholm, A Jensen, N Zangenberg Research-Technology Management 64 (2), 46-56, 2021 | 8 | 2021 |
| Steam initiated hydrotalcite conversion coatings: Application to environmental Al alloy surface treatment L Zhou, H Friis, M Roefzaad, KB Hansen, S Eisenhardt, AG Andersen, ... Surface and Coatings Technology 340, 45-54, 2018 | 7 | 2018 |
| Molecular beam epitaxy growth of the dilute nitride GaAs1− xNx with a helical resonator plasma source N Zangenberg, DA Beaton, T Tiedje, S Tixier, M Adamcyk, R Kumaran, ... Journal of Vacuum Science & Technology A 25 (4), 850-856, 2007 | 6 | 2007 |
