Folgen
Rytis Dargis
Rytis Dargis
IQE
Keine bestätigte E-Mail-Adresse - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Introducing crystalline rare‐earth oxides into Si technologies
HJ Osten, A Laha, M Czernohorsky, E Bugiel, R Dargis, A Fissel
physica status solidi (a) 205 (4), 695-707, 2008
1062008
Epitaxial aluminum scandium nitride super high frequency acoustic resonators
M Park, Z Hao, R Dargis, A Clark, A Ansari
Journal of Microelectromechanical Systems 29 (4), 490-498, 2020
802020
Strain relaxation in single crystal SrTiO3 grown on Si (001) by molecular beam epitaxy
M Choi, A Posadas, R Dargis, CK Shih, AA Demkov, DH Triyoso, ...
Journal of applied physics 111 (6), 2012
722012
A 10 GHz single-crystalline scandium-doped aluminum nitride Lamb-wave resonator
M Park, Z Hao, DG Kim, A Clark, R Dargis, A Ansari
2019 20th International Conference on Solid-State Sensors, Actuators and …, 2019
442019
Stability of crystalline Gd2O3 thin films on silicon during rapid thermal annealing
M Czernohorsky, D Tetzlaff, E Bugiel, R Dargis, HJ Osten, HDB Gottlob, ...
Semiconductor science and technology 23 (3), 035010, 2008
422008
Crystal structure and strain state of molecular beam epitaxial grown Gd2O3 on Si (1 1 1) substrates: a diffraction study
JX Wang, A Laha, A Fissel, D Schwendt, R Dargis, T Watahiki, R Shayduk, ...
Semiconductor science and technology 24 (4), 045021, 2009
402009
Structural and thermal properties of single crystalline epitaxial Gd2O3 and Er2O3 grown on Si (111)
R Dargis, D Williams, R Smith, E Arkun, R Roucka, A Clark, M Lebby
ECS Journal of Solid State Science and Technology 1 (2), N24, 2012
392012
Integration of functional epitaxial oxides into silicon: From high- application to nanostructures
HJ Osten, D Kühne, A Laha, M Czernohorsky, E Bugiel, A Fissel
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
362007
Single Crystalline ScAlN Surface Acoustic Wave Resonators with Large Figure of Merit (Q× kₜ²)
Z Hao, M Park, DG Kim, A Clark, R Dargis, H Zhu, A Ansari
2019 IEEE MTT-S International Microwave Symposium (IMS), 786-789, 2019
342019
Single‐Crystal Multilayer Nitride, Metal, and Oxide Structures on Engineered Silicon for New‐Generation Radio Frequency Filter Applications
R Dargis, A Clark, A Ansari, Z Hao, M Park, DG Kim, R Yanka, ...
physica status solidi (a) 217 (7), 1900813, 2020
302020
Super high-frequency scandium aluminum nitride crystalline film bulk acoustic resonators
M Park, J Wang, R Dargis, A Clark, A Ansari
2019 IEEE International Ultrasonics Symposium (IUS), 1689-1692, 2019
292019
REO gate dielectric for III-N device on Si substrate
R Dargis, R Smith, A Clark, E Arkun, M Lebby
US Patent 8,878,188, 2014
262014
Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy
A Fissel, R Dargis, E Bugiel, D Schwendt, T Wietler, J Krügener, A Laha, ...
Thin Solid Films 518 (9), 2546-2550, 2010
242010
Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology
R Dargis, A Clark, F Erdem Arkun, T Grinys, R Tomasiunas, A O'Hara, ...
Journal of Vacuum Science & Technology A 32 (4), 2014
192014
Epitaxial growth and thermal stability of silicon layers on crystalline gadolinium oxide
R Dargis, A Fissel, D Schwendt, E Bugiel, J Krügener, T Wietler, A Laha, ...
Vacuum 85 (4), 523-526, 2010
182010
Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride
R Pelzel, R Dargis, A Clark, H Williams, P Chin, M Lebby
US Patent 10,075,143, 2018
152018
Depth-dependent phase change in Gd2O3 epitaxial layers under ion irradiation
N Mejai, A Debelle, L Thomé, G Sattonnay, D Gosset, A Boulle, R Dargis, ...
Applied Physics Letters 107 (13), 2015
142015
REO/ALO/A1N template for III-N material growth on silicon
E Arkun, M Lebby, A Clark, R Dargis
US Patent 8,823,055, 2014
142014
Stress mitigating amorphous SiO2 interlayer
R Dargis, A Clark, E Arkun
US Patent 8,796,121, 2014
142014
Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride
R Pelzel, R Dargis, A Clark, H Williams, P Chin, M Lebby
US Patent 10,566,944, 2020
132020
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20