| Determination of defect level parameters in semi-insulating GaAs: Cr from transient photocurrent experiment H Belgacem, A Merazga, C Longeaud Semiconductor science and technology 20 (1), 56, 2004 | 12 | 2004 |
| Transient photoconductivity, density of tail states and doping effect in amorphous silicon A Merazga, H Belgacem, C Main, S Reynolds Solid state communications 112 (10), 535-539, 1999 | 12 | 1999 |
| Density of states in Bi12TiO20 from time-of-flight measurements C Longeaud, H Belgacem, C Douay Journal of Physics: Condensed Matter 19 (47), 476202, 2007 | 8 | 2007 |
| Determination of the density of localized states in semiconductors from the pre-recombination transient photoconductivity H Belgacem, A Merazga Solid-state electronics 52 (1), 73-77, 2008 | 6 | 2008 |
| A new approach for determination of free carriers lifetime and density of localised states in disordered semiconductors H Belgacem, S Reynolds Philosophical Magazine 99 (2), 131-147, 2019 | | 2019 |
| Développement d’une Nouvelle Technique Spectroscopique de Détermination de la Densité des Etats Localisés dans les Semi-conducteurs à partir de la Photoconductivité Transitoire H Belgacem Université de Batna 2, 2010 | | 2010 |
| Density of states in Bi {sub 12} TiO {sub 20} from time-of-flight measurements C Longeaud, H Belgacem, C Douay Journal of Physics. Condensed Matter 19, 2007 | | 2007 |
| Transient photoconductivity, density of tail states and doping effect in a-Si: H A Merazga, H Belgacem, C Main, S Reynolds ICM'99. Proceedings. Eleventh International Conference on Microelectronics …, 1999 | | 1999 |
Amar MerazgaProfessor, Solid State Physics, Taif UniversityVerified email at tu.edu.sa
