Eicke R. Weber
Eicke R. Weber
Director, Berkeley Education Alliance for Research in Singapore BEARS
Bestätigte E-Mail-Adresse bei berkeley.edu
Zitiert von
Zitiert von
Room-temperature ultraviolet nanowire nanolasers
MH Huang, S Mao, H Feick, H Yan, Y Wu, H Kind, E Weber, R Russo, ...
science 292 (5523), 1897-1899, 2001
Catalytic growth of zinc oxide nanowires by vapor transport
MH Huang, Y Wu, H Feick, N Tran, E Weber, P Yang
Advanced materials 13 (2), 113-116, 2001
Transition metals in silicon
ER Weber
Applied Physics A 30 (1), 1-22, 1983
Nanowires, nanostructures and devices fabricated therefrom
A Majumdar, A Shakouri, TD Sands, P Yang, SS Mao, RE Russo, H Feick, ...
US Patent 6,882,051, 2005
Strain-related phenomena in GaN thin films
C Kisielowski, J Krüger, S Ruvimov, T Suski, JW Ager III, E Jones, ...
Physical review B 54 (24), 17745, 1996
A systematic analysis of defects in ion-implanted silicon
KS Jones, S Prussin, ER Weber
Applied Physics A 45 (1), 1-34, 1988
Iron and its complexes in silicon
AA Istratov, H Hieslmair, ER Weber
Applied Physics A 69 (1), 13-44, 1999
Semiconductors and semimetals
RK Willardson, AC Beer
Academic press, 1977
Radiation hard silicon detectors—Developments by the RD48 (ROSE) collaboration
G Lindström, M Ahmed, S Albergo, P Allport, D Anderson, L Andricek, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2001
Dislocation-related photoluminescence in silicon
R Sauer, J Weber, J Stolz, ER Weber, KH Küsters, H Alexander
Applied Physics A 36 (1), 1-13, 1985
Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures
M Kaminska, Z Liliental‐Weber, ER Weber, T George, JB Kortright, ...
Applied physics letters 54 (19), 1881-1883, 1989
The advanced unified defect model for Schottky barrier formation
WE Spicer, Z Liliental‐Weber, E Weber, N Newman, T Kendelewicz, ...
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1988
Identification of AsGa antisites in plastically deformed GaAs
ER Weber, H Ennen, U Kaufmann, J Windscheif, J Schneider, T Wosinski
Journal of Applied Physics 53 (9), 6140-6143, 1982
Physics of copper in silicon
AA Istratov, ER Weber
Journal of The Electrochemical Society 149 (1), G21, 2001
Iron contamination in silicon technology
AA Istratov, H Hieslmair, ER Weber
Applied Physics A 70 (5), 489-534, 2000
Semiconductors for room temperature nuclear detector applications
TE Schlesinger
Semicond. Semimetals 43, 240, 1995
Semiconductors and semimetals
EO Kane
Acad. Press Inc 1, 75, 1966
Electrical properties of dislocations and point defects in plastically deformed silicon
P Omling, ER Weber, L Montelius, H Alexander, J Michel
Physical Review B 32 (10), 6571, 1985
Electrical properties and recombination activity of copper, nickel and cobalt in silicon
AA Istratov, ER Weber
Applied physics A 66 (2), 123-136, 1998
Native point defects in low‐temperature‐grown GaAs
X Liu, A Prasad, J Nishio, ER Weber, Z Liliental‐Weber, W Walukiewicz
Applied Physics Letters 67 (2), 279-281, 1995
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