Eicke R. Weber
Eicke R. Weber
Director, Berkeley Education Alliance for Research in Singapore BEARS
Bestätigte E-Mail-Adresse bei berkeley.edu
Titel
Zitiert von
Zitiert von
Jahr
Room-temperature ultraviolet nanowire nanolasers
MH Huang, S Mao, H Feick, H Yan, Y Wu, H Kind, E Weber, R Russo, ...
science 292 (5523), 1897-1899, 2001
107562001
Catalytic growth of zinc oxide nanowires by vapor transport
MH Huang, Y Wu, H Feick, N Tran, E Weber, P Yang
Advanced materials 13 (2), 113-116, 2001
34762001
Transition metals in silicon
ER Weber
Applied Physics A 30 (1), 1-22, 1983
15101983
Nanowires, nanostructures and devices fabricated therefrom
A Majumdar, A Shakouri, TD Sands, P Yang, SS Mao, RE Russo, H Feick, ...
US Patent 6,882,051, 2005
957*2005
Strain-related phenomena in GaN thin films
C Kisielowski, J Krüger, S Ruvimov, T Suski, JW Ager III, E Jones, ...
Physical review B 54 (24), 17745, 1996
9261996
A systematic analysis of defects in ion-implanted silicon
KS Jones, S Prussin, ER Weber
Applied Physics A 45 (1), 1-34, 1988
6601988
Iron and its complexes in silicon
AA Istratov, H Hieslmair, ER Weber
Applied Physics A 69 (1), 13-44, 1999
6531999
Semiconductors and semimetals
RK Willardson, AC Beer
Academic press, 1977
6061977
Radiation hard silicon detectors—Developments by the RD48 (ROSE) collaboration
G Lindström, M Ahmed, S Albergo, P Allport, D Anderson, L Andricek, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2001
584*2001
Dislocation-related photoluminescence in silicon
R Sauer, J Weber, J Stolz, ER Weber, KH Küsters, H Alexander
Applied Physics A 36 (1), 1-13, 1985
5041985
Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures
M Kaminska, Z Liliental‐Weber, ER Weber, T George, JB Kortright, ...
Applied physics letters 54 (19), 1881-1883, 1989
4851989
The advanced unified defect model for Schottky barrier formation
WE Spicer, Z Liliental‐Weber, E Weber, N Newman, T Kendelewicz, ...
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1988
4711988
Identification of AsGa antisites in plastically deformed GaAs
ER Weber, H Ennen, U Kaufmann, J Windscheif, J Schneider, T Wosinski
Journal of Applied Physics 53 (9), 6140-6143, 1982
4671982
Physics of copper in silicon
AA Istratov, ER Weber
Journal of The Electrochemical Society 149 (1), G21, 2001
4452001
Iron contamination in silicon technology
AA Istratov, H Hieslmair, ER Weber
Applied Physics A 70 (5), 489-534, 2000
4262000
Semiconductors for room temperature nuclear detector applications
TE Schlesinger
Semicond. Semimetals 43, 240, 1995
423*1995
Semiconductors and semimetals
EO Kane
Acad. Press Inc 1, 75, 1966
376*1966
Electrical properties of dislocations and point defects in plastically deformed silicon
P Omling, ER Weber, L Montelius, H Alexander, J Michel
Physical Review B 32 (10), 6571, 1985
3531985
Electrical properties and recombination activity of copper, nickel and cobalt in silicon
AA Istratov, ER Weber
Applied physics A 66 (2), 123-136, 1998
3451998
Native point defects in low‐temperature‐grown GaAs
X Liu, A Prasad, J Nishio, ER Weber, Z Liliental‐Weber, W Walukiewicz
Applied Physics Letters 67 (2), 279-281, 1995
3341995
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