Krishna Saraswat
Krishna Saraswat
Professor of Electrical Engineering, Stanford University
Bestätigte E-Mail-Adresse bei stanford.edu - Startseite
Titel
Zitiert von
Zitiert von
Jahr
3-D ICs: A novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration
K Banerjee, SJ Souri, P Kapur, KC Saraswat
Proceedings of the IEEE 89 (5), 602-633, 2001
11612001
Interconnect limits on gigascale integration (GSI) in the 21st century
JA Davis, R Venkatesan, A Kaloyeros, M Beylansky, SJ Souri, K Banerjee, ...
Proceedings of the IEEE 89 (3), 305-324, 2001
7412001
Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna
L Tang, SE Kocabas, S Latif, AK Okyay, DS Ly-Gagnon, KC Saraswat, ...
Nature Photonics 2 (4), 226-229, 2008
6922008
Germanium nanowire field-effect transistors with and high-κ gate dielectrics
D Wang, Q Wang, A Javey, R Tu, H Dai, H Kim, PC McIntyre, ...
Applied Physics Letters 83 (12), 2432-2434, 2003
5672003
Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and≪ 60mV/dec subthreshold slope
T Krishnamohan, D Kim, S Raghunathan, K Saraswat
2008 IEEE International Electron Devices Meeting, 1-3, 2008
5222008
Dopant segregation in polycrystalline silicon
MM Mandurah, KC Saraswat, CR Helms, TI Kamins
Journal of applied physics 51 (11), 5755-5763, 1980
4701980
Two-dimensional thermal oxidation of silicon. II. Modeling stress effects in wet oxides
DB Kao, JP Mcvittie, WD Nix, KC Saraswat
IEEE transactions on electron devices 35 (1), 25-37, 1988
4211988
Germanium MOS capacitors incorporating ultrathin high-/spl kappa/gate dielectric
CO Chui, S Ramanathan, BB Triplett, PC McIntyre, KC Saraswat
IEEE Electron Device Letters 23 (8), 473-475, 2002
4192002
Effect of scaling of interconnections on the time delay of VLSI circuits
KC Saraswat, F Mohammadi
IEEE Transactions on Electron Devices 29 (4), 645-650, 1982
4171982
On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates
K Martens, CO Chui, G Brammertz, B De Jaeger, D Kuzum, M Meuris, ...
IEEE Transactions on Electron Devices 55 (2), 547-556, 2008
4022008
Activation and diffusion studies of ion-implanted and dopants in germanium
CO Chui, K Gopalakrishnan, PB Griffin, JD Plummer, KC Saraswat
Applied physics letters 83 (16), 3275-3277, 2003
3512003
Achieving direct band gap in germanium through integration of Sn alloying and external strain
S Gupta, B Magyari-Köpe, Y Nishi, KC Saraswat
Journal of Applied Physics 113 (7), 073707, 2013
3262013
Thermal/microwave remote plasma multiprocessing reactor and method of use
MM Moslehi, KC Saraswat
US Patent 4,913,929, 1990
3091990
A sub-400/spl deg/C germanium MOSFET technology with high-/spl kappa/dielectric and metal gate
CO Chui, H Kim, D Chi, BB Triplett, PC McIntyre, KC Saraswat
Digest. International Electron Devices Meeting,, 437-440, 2002
3042002
Photodetectors and Photoreceivers-Long Wavelength Resonant Cavity Photodetector Based on InP/Air-Gap Bragg Reflectors
H Huang, Y Huang, X Wang, Q Wang, X Ren
IEEE Photonics Technology Letters 16 (1), 245-247, 2004
302*2004
Electrical and materials properties of gate dielectrics grown by atomic layer chemical vapor deposition
CM Perkins, BB Triplett, PC McIntyre, KC Saraswat, S Haukka, ...
Applied Physics Letters 78 (16), 2357-2359, 2001
2982001
Low-leakage germanium-seeded laterally-crystallized single-grain 100-nm TFTs for vertical integration applications
V Subramanian, M Toita, NR Ibrahim, SJ Souri, KC Saraswat
IEEE Electron Device Letters 20 (7), 341-343, 1999
2931999
Two-dimensional thermal oxidation of silicon—I. Experiments
DB Kao, JP McVittie, WD Nix, KC Saraswat
IEEE Transactions on Electron Devices 34 (5), 1008-1017, 1987
2831987
The effect of fluorine in silicon dioxide gate dielectrics
PJ Wright, KC Saraswat
IEEE Transactions on Electron Devices 36 (5), 879-889, 1989
2791989
Effects of crystallization on the electrical properties of ultrathin dielectrics grown by atomic layer deposition
H Kim, PC McIntyre, KC Saraswat
Applied physics letters 82 (1), 106-108, 2003
2722003
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