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Yanbing Han
Yanbing Han
Verified email at zzu.edu.cn
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Year
Wide band gap chalcogenide semiconductors
R Woods-Robinson, Y Han, H Zhang, T Ablekim, I Khan, KA Persson, ...
Chemical reviews 120 (9), 4007-4055, 2020
3042020
Effects of silicon doping on the performance of tin oxide thin film transistors
J Yang, Z Yang, T Meng, Y Han, X Wang, Q Zhang
physica status solidi (a) 213 (4), 1010-1015, 2016
382016
Optoelectronic Properties of Strontium and Barium Copper Sulfides Prepared by Combinatorial Sputtering
H Yanbing, S Sebastian, Z Qun, Z Andriy
Chemistry of Materials, 2017
342017
Fabrication of 2D PdSe2/3D CdTe Mixed-Dimensional van der Waals Heterojunction for Broadband Infrared Detection
D Wu, Z Mo, Y Han, P Lin, Z Shi, X Chen, Y Tian, XJ Li, H Yuan, YH Tsang
ACS Applied Materials & Interfaces 13 (35), 41791-41801, 2021
322021
Combinatorial tuning of structural and optoelectronic properties in CuxZn1− xS
R Woods-Robinson, Y Han, JS Mangum, CL Melamed, BP Gorman, ...
Matter 1 (4), 862-880, 2019
322019
Characteristic of bismuth-doped tin oxide thin-film transistors
J Yang, S Pi, Y Han, R Fu, T Meng, Q Zhang
IEEE Transactions on Electron Devices 63 (5), 1904-1909, 2016
292016
Stabilization of wide band-gap p-type wurtzite MnTe thin films on amorphous substrates
S Siol, Y Han, J Mangum, P Schulz, AM Holder, TR Klein, MFAM van Hest, ...
Journal of Materials Chemistry C 6 (23), 6297-6304, 2018
272018
H2O adsorption on amorphous In-Ga-Zn-O thin-film transistors under negative bias stress
J Yang, PY Liao, TC Chang, HC Chiang, BW Chen, YC Chien, D Lin, ...
Applied Physics Letters 111 (7), 2017
252017
H2O Induced Hump Phenomenon in Capacitance–Voltage Measurements of a-IGZO Thin-Film Transistors
Y Han, C Cui, J Yang, MY Tsai, TC Chang, Q Zhang
IEEE Transactions on Device and Materials Reliability 16 (1), 20-24, 2015
212015
Preparation of rare-earth thulium doped tin-oxide thin films and their applications in thin film transistors
J Ren, Y Huang, K Li, J Shen, W Zeng, C Sheng, J Shao, Y Han, Q Zhang
Applied Surface Science 493, 63-69, 2019
202019
Zinc-stabilized manganese telluride with wurtzite crystal structure
Y Han, AM Holder, S Siol, S Lany, Q Zhang, A Zakutayev
The Journal of Physical Chemistry C 122 (32), 18769-18775, 2018
202018
Enhancing the optical absorption of chalcogenide perovskite BaZrS3 by optimizing the synthesis and post-processing conditions
J Xu, Y Fan, W Tian, L Ye, Y Zhang, Y Tian, Y Han, Z Shi
Journal of Solid State Chemistry 307, 122872, 2022
162022
Influences of nitrogen doping on the electrical characteristics of indium-zinc-oxide thin film transistors
Y Han, H Yan, YC Tsai, Y Li, Q Zhang, HPD Shieh
IEEE Transactions on Device and Materials Reliability 16 (4), 642-646, 2016
162016
Combinatorial nitrogen gradients in sputtered thin films
Y Han, B Matthews, D Roberts, KR Talley, SR Bauers, C Perkins, Q Zhang, ...
ACS Combinatorial Science 20 (7), 436-442, 2018
142018
Effects of nitrogen doping on performance of amorphous SnSiO thin film transistor
J Yang, Y Han, R Fu, Q Zhang
Journal of Display Technology 12 (12), 1560-1564, 2016
122016
The stability of tin silicon oxide thin-film transistors with different annealing temperatures
J Yang, R Fu, Y Han, T Meng, Q Zhang
Europhysics Letters 115 (2), 28006, 2016
122016
Regulating Exciton De‐Trapping of Te4+‐Doped Zero‐Dimensional Scandium‐Halide Perovskite for Fluorescence Thermometry with Record High Time‐Resolved …
G Li, X Chen, M Wang, S Cheng, D Yang, D Wu, Y Han, M Jia, X Li, ...
Advanced Materials 35 (44), 2305495, 2023
102023
P-type conductive BaZrS3 thin film and its band gap tunning via Ruddlesden-Popper Ba3Zr2S7 and titanium alloying
Y Han, J Xu, Y Liang, X Chen, M Jia, J Zhang, L Lian, Y Liu, X Li, Z Shi
Chemical Engineering Journal 473, 145351, 2023
102023
Amorphous nickel incorporated tin oxide thin film transistors
J Yang, J Ren, D Lin, Y Han, M Qu, S Pi, R Fu, Q Zhang
Journal of Physics D: Applied Physics 50 (35), 355103, 2017
102017
Parametric study on controllable growth of SrZrS3 thin films with good conductivity for photodetectors
Y Liang, Y Zhang, J Xu, J Ma, H Jiang, X Li, B Zhang, X Chen, Y Tian, ...
Nano Research 16 (5), 7867-7873, 2023
92023
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