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Puneet Suvarna
Puneet Suvarna
College of Nanoscale Science and Engineering
Bestätigte E-Mail-Adresse bei albany.edu
Titel
Zitiert von
Zitiert von
Jahr
Single photon counting UV solar-blind detectors using silicon and III-nitride materials
S Nikzad, M Hoenk, AD Jewell, JJ Hennessy, AG Carver, TJ Jones, ...
Sensors 16 (6), 927, 2016
542016
A Tersoff‐based interatomic potential for wurtzite AlN
M Tungare, Y Shi, N Tripathi, P Suvarna, F Shahedipour‐Sandvik
physica status solidi (a) 208 (7), 1569-1572, 2011
532011
Visible-blind APD heterostructure design with superior field confinement and low operating voltage
J Bulmer, P Suvarna, J Leathersich, J Marini, I Mahaboob, N Newman, ...
IEEE Photonics Technology Letters 28 (1), 39-42, 2015
262015
Design and growth of visible-blind and solar-blind III-N APDs on sapphire substrates
P Suvarna, M Tungare, JM Leathersich, P Agnihotri, ...
Journal of electronic materials 42, 854-858, 2013
262013
The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes
RP Tompkins, TA Walsh, MA Derenge, KW Kirchner, S Zhou, CB Nguyen, ...
Journal of Materials Research 26 (23), 2895-2900, 2011
202011
Ion implantation-based edge termination to improve III-N APD reliability and performance
P Suvarna, J Bulmer, JM Leathersich, J Marini, I Mahaboob, J Hennessy, ...
IEEE Photonics Technology Letters 27 (5), 498-501, 2014
192014
HVPE GaN for high power electronic Schottky diodes
RP Tompkins, TA Walsh, MA Derenge, KW Kirchner, S Zhou, CB Nguyen, ...
Solid-state electronics 79, 238-243, 2013
172013
Novel Cs-free GaN photocathodes
N Tripathi, LD Bell, S Nikzad, M Tungare, PH Suvarna, FS Sandvik
Journal of electronic materials 40, 382-387, 2011
162011
GaN power schottky diodes with drift layers grown on four substrates
RP Tompkins, JR Smith, KW Kirchner, KA Jones, JH Leach, K Udwary, ...
Journal of electronic materials 43, 850-856, 2014
152014
Deposition of GaN films on crystalline rare earth oxides by MOCVD
J Leathersich, E Arkun, A Clark, P Suvarna, J Marini, R Dargis, ...
Journal of crystal growth 399, 49-53, 2014
132014
Homoepitaxial growth of non-polar AlN crystals using molecular dynamics simulations
J Leathersich, P Suvarna, M Tungare, FS Shahedipour-Sandvik
Surface science 617, 36-41, 2013
122013
Enhanced performance of an AlGaN/GaN high electron mobility transistor on Si by means of improved adatom diffusion length during MOCVD epitaxy
F Shahedipour-Sandvik, J Leathersich, RP Tompkins, P Suvarna, ...
Semiconductor science and technology 28 (7), 074002, 2013
92013
Annealing studies of AlN capped, MOCVD grown GaN films
MA Derenge, KW Kirchner, KA Jones, P Suvarna, S Shahedipour-Sandvik
Solid-state electronics 101, 23-28, 2014
62014
Crack-free III-nitride structures (> 3.5 μm) on silicon
M Tungare, JM Leathersich, N Tripathi, P Suvarna, ...
MRS Online Proceedings Library (OPL) 1324, mrss11-1324-d01-04, 2011
62011
F.(Shadi) Shahedipour-Sandvik
J Leathersich, E Arkun, A Clark, P Suvarna, J Marini, R Dargis
J. Cryst. Growth 399, 49, 2014
52014
Modification of dislocation behavior in GaN overgrown on engineered AlN film-on-bulk Si substrate
M Tungare, X Weng, JM Leathersich, P Suvarna, JM Redwing
Journal of Applied Physics 113 (16), 2013
52013
Development of small unit cell avalanche photodiodes for UV imaging applications
AK Sood, RE Welser, RA Richwine, YR Puri, RD Dupuis, JH Ryou, ...
Advanced Photon Counting Techniques VI 8375, 158-168, 2012
42012
Ion-Implantation-Induced Damage Characteristics Within AlN and Si for GaN-on-Si Epitaxy
JM Leathersich, M Tungare, X Weng, P Suvarna, P Agnihotri, M Evans, ...
Journal of electronic materials 42, 833-837, 2013
22013
III-Nitride devices on Si: Challenges and opportunities
F Shahedipour-Sandvik, M Tungare, J Leathersich, P Suvarna, ...
2011 International Semiconductor Device Research Symposium (ISDRS), 1-2, 2011
22011
Atomic-layer Deposition for Improved Performance of III-N Avalanche Photodiodes
J Hennessy, LD Bell, S Nikzad, P Suvarna, JM Leathersich, J Marini, ...
MRS Online Proceedings Library (OPL) 1635, 23-28, 2014
12014
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