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Bonnie Weir
Bonnie Weir
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Year
Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates
EA Fitzgerald, YH Xie, ML Green, D Brasen, AR Kortan, J Michel, YJ Mii, ...
Applied physics letters 59 (7), 811-813, 1991
9301991
Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates
EA Fitzgerald, YH Xie, ML Green, D Brasen, AR Kortan, J Michel, YJ Mii, ...
Applied physics letters 59 (7), 811-813, 1991
9301991
Relaxed GexSi1−x structures for III–V integration with Si and high mobility two‐dimensional electron gases in Si
EA Fitzgerald, YH Xie, D Monroe, PJ Silverman, JM Kuo, AR Kortan, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992
6771992
Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy
YJ Mii, YH Xie, EA Fitzgerald, D Monroe, FA Thiel, BE Weir, LC Feldman
Applied Physics Letters 59 (13), 1611-1613, 1991
3581991
Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy
JP Chang, ML Green, VM Donnelly, RL Opila, J Eng Jr, J Sapjeta, ...
Journal of Applied Physics 87 (9), 4449-4455, 2000
3232000
Performance of gain-guided surface emitting lasers with semiconductor distributed Bragg reflectors
G Hasnain, K Tai, L Yang, YH Wang, RJ Fischer, JD Wynn, B Weir, ...
IEEE Journal of Quantum Electronics 27 (6), 1377-1385, 1991
2701991
Ultra-thin gate dielectrics: They break down, but do they fail?
BE Weir, PJ Silverman, D Monroe, KS Krisch, MA Alam, GB Alers, ...
International Electron Devices Meeting. IEDM Technical Digest, 73-76, 1997
2451997
Absorption and luminescence studies of free-standing porous silicon films
YH Xie, MS Hybertsen, WL Wilson, SA Ipri, GE Carver, WL Brown, E Dons, ...
Physical Review B 49 (8), 5386, 1994
1581994
Absorption and luminescence studies of free-standing porous silicon films
YH Xie, MS Hybertsen, WL Wilson, SA Ipri, GE Carver, WL Brown, E Dons, ...
Physical Review B 49 (8), 5386, 1994
1561994
Explanation of stress-induced damage in thin oxides
DJ Bude, BE Weir, PJ Silverman
International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998
1511998
Hot-electronic injection testing of transistors on a wafer
B Weir
US Patent 7,898,277, 2011
1452011
Precursor ion damage and angular dependence of single event gate rupture in thin oxides
FW Sexton, DM Fleetwood, MR Shaneyfelt, PE Dodd, GL Hash, ...
IEEE Transactions on Nuclear Science 45 (6), 2509-2518, 1998
1321998
A study of soft and hard breakdown-Part I: Analysis of statistical percolation conductance
MA Alam, BE Weir, PJ Silverman
IEEE Transactions on Electron Devices 49 (2), 232-238, 2002
1292002
90% coupling of top surface emitting GaAs/AlGaAs quantum well laser output into 8 µm diameter core silica fibre
K Tai, G Hasnain, JD Wynn, RJ Fischer, YH Wang, B Weir, J Gamelin, ...
Electronics letters 26 (19), 1628-1629, 1990
1231990
90% coupling of top surface emitting GaAs/AlGaAs quantum well laser output into 8 µm diameter core silica fibre
K Tai, G Hasnain, JD Wynn, RJ Fischer, YH Wang, B Weir, J Gamelin, ...
Electronics letters 26 (19), 1628-1629, 1990
1231990
Low leakage, ultra-thin gate oxides for extremely high performance sub-100 nm nMOSFETs
G Timp, A Agarwal, FH Baumann, T Boone, M Buonanno, R Cirelli, ...
International Electron Devices Meeting. IEDM Technical Digest, 930-932, 1997
1181997
A study of soft and hard breakdown-Part II: Principles of area, thickness, and voltage scaling
MA Alam, BE Weir, PJ Silverman
IEEE Transactions on Electron Devices 49 (2), 239-246, 2002
982002
Mechanically and thermally stable Si‐Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900° C
ML Green, BE Weir, D Brasen, YF Hsieh, G Higashi, A Feygenson, ...
Journal of applied physics 69 (2), 745-751, 1991
981991
Understanding the limits of ultrathin SiO2 and Si O N gate dielectrics for sub-50 nm CMOS
ML Green, TW Sorsch, GL Timp, DA Muller, BE Weir, PJ Silverman, ...
Microelectronic Engineering 48 (1-4), 25-30, 1999
971999
Progress toward 10 nm CMOS devices
G Timp, KK Bourdelle, JE Bower, FH Baumann, T Boone, R Cirelli, ...
International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998
841998
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