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Anderson Janotti
Anderson Janotti
University of Delaware
Bestätigte E-Mail-Adresse bei udel.edu - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Fundamentals of zinc oxide as a semiconductor
A Janotti, CG Van de Walle
Reports on progress in physics 72 (12), 126501, 2009
38862009
Native point defects in ZnO
A Janotti, CG Van de Walle
Physical Review B 76 (16), 165202, 2007
30302007
Oxygen vacancies in ZnO
A Janotti, CG Van de Walle
Applied Physics Letters 87 (12), 122102, 2005
17952005
First-principles calculations for point defects in solids
C Freysoldt, B Grabowski, T Hickel, J Neugebauer, G Kresse, A Janotti, ...
Reviews of modern physics 86 (1), 253, 2014
17832014
Hydrogen multicentre bonds
A Janotti, CG Van de Walle
Nature materials 6 (1), 44-47, 2007
8082007
Oxygen vacancies and donor impurities in
JB Varley, JR Weber, A Janotti, CG Van de Walle
Applied Physics Letters 97 (14), 142106, 2010
7722010
Quantum computing with defects
JR Weber, WF Koehl, JB Varley, A Janotti, BB Buckley, CG Van de Walle, ...
Proceedings of the National Academy of Sciences 107 (19), 8513-8518, 2010
7262010
Carbon impurities and the yellow luminescence in GaN
JL Lyons, A Janotti, CG Van de Walle
Applied Physics Letters 97 (15), 152108, 2010
6282010
Hybrid functional studies of the oxygen vacancy in
A Janotti, JB Varley, P Rinke, N Umezawa, G Kresse, CG Van de Walle
Physical Review B 81 (8), 085212, 2010
5992010
Why nitrogen cannot lead to -type conductivity in ZnO
JL Lyons, A Janotti, CG Van de Walle
Applied Physics Letters 95 (25), 252105, 2009
4382009
New insights into the role of native point defects in ZnO
A Janotti, CG Van de Walle
Journal of Crystal Growth 287 (1), 58-65, 2006
4352006
Role of self-trapping in luminescence and -type conductivity of wide-band-gap oxides
JB Varley, A Janotti, C Franchini, CG Van de Walle
Physical Review B 85 (8), 081109, 2012
4332012
Sources of Electrical Conductivity in
AK Singh, A Janotti, M Scheffler, CG Van de Walle
Physical Review Letters 101 (5), 055502, 2008
4192008
Effects of cation d states on the structural and electronic properties of III-nitride and II-oxide wide-band-gap semiconductors
A Janotti, D Segev, CG Van de Walle
Physical Review B 74 (4), 045202, 2006
3902006
Direct view at excess electrons in TiO 2 rutile and anatase
M Setvin, C Franchini, X Hao, M Schmid, A Janotti, M Kaltak, ...
Physical review letters 113 (8), 086402, 2014
3722014
Effects of carbon on the electrical and optical properties of InN, GaN, and AlN
JL Lyons, A Janotti, CG Van de Walle
Physical Review B 89 (3), 035204, 2014
3712014
Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs
A Janotti, SH Wei, SB Zhang
Physical Review B 65 (11), 115203, 2002
2922002
Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces
P Moetakef, TA Cain, DG Ouellette, JY Zhang, DO Klenov, A Janotti, ...
Applied Physics Letters 99 (23), 232116, 2011
2882011
Hydrogenated cation vacancies in semiconducting oxides
JB Varley, H Peelaers, A Janotti, CG Van de Walle
Journal of Physics: Condensed Matter 23 (33), 334212, 2011
2712011
Shallow versus deep nature of Mg acceptors in nitride semiconductors
JL Lyons, A Janotti, CG Van de Walle
Physical review letters 108 (15), 156403, 2012
2502012
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