Strong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi-level unpinning DB Suyatin, V Jain, VA Nebol’sin, J Trägårdh, ME Messing, JB Wagner, ... Nature communications 5 (1), 1-8, 2014 | 54 | 2014 |
Current–voltage characterization of individual as-grown nanowires using a scanning tunneling microscope R Timm, O Persson, DLJ Engberg, A Fian, JL Webb, J Wallentin, ... Nano letters 13 (11), 5182-5189, 2013 | 20 | 2013 |
Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide R Timm, AR Head, S Yngman, JV Knutsson, M Hjort, SR McKibbin, ... Nature communications 9 (1), 1-9, 2018 | 19 | 2018 |
Scanning tunneling spectroscopy on InAs–GaSb esaki diode nanowire devices during operation O Persson, JL Webb, KA Dick, C Thelander, A Mikkelsen, R Timm Nano letters 15 (6), 3684-3691, 2015 | 17 | 2015 |
High resolution scanning gate microscopy measurements on InAs/GaSb nanowire Esaki diode devices JL Webb, O Persson, KA Dick, C Thelander, R Timm, A Mikkelsen Nano Research 7 (6), 877-887, 2014 | 13 | 2014 |
Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy O Persson, E Lind, E Lundgren, J Rubio-Zuazo, GR Castro, ... AIP Advances 3 (7), 072131, 2013 | | 2013 |
Atomic Surface Structure and Electronic Properties of Semiconductor Nanowires Studied by Scanning Tunneling Microscopy and Spectroscopy R Timm, M Hjort, O Persson, J Knutsson, S Lehmann, J Wallentin, ... ICPS 2012, 2012 | | 2012 |