| Strong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi-level unpinning DB Suyatin, V Jain, VA Nebol’sin, J Trägårdh, ME Messing, JB Wagner, ... Nature Communications 5 (1), 3221, 2014 | 71 | 2014 |
| Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide R Timm, AR Head, S Yngman, JV Knutsson, M Hjort, SR McKibbin, ... Nature communications 9 (1), 1412, 2018 | 60 | 2018 |
| Current–voltage characterization of individual as-grown nanowires using a scanning tunneling microscope R Timm, O Persson, DLJ Engberg, A Fian, JL Webb, J Wallentin, ... Nano letters 13 (11), 5182-5189, 2013 | 27 | 2013 |
| Scanning tunneling spectroscopy on InAs–GaSb esaki diode nanowire devices during operation O Persson, JL Webb, KA Dick, C Thelander, A Mikkelsen, R Timm Nano letters 15 (6), 3684-3691, 2015 | 21 | 2015 |
| High resolution scanning gate microscopy measurements on InAs/GaSb nanowire Esaki diode devices JL Webb, O Persson, KA Dick, C Thelander, R Timm, A Mikkelsen Nano Research 7, 877-887, 2014 | 17 | 2014 |
| Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy O Persson, E Lind, E Lundgren, J Rubio-Zuazo, GR Castro, ... AIP Advances 3 (7), 2013 | | 2013 |
| Atomic Surface Structure and Electronic Properties of Semiconductor Nanowires Studied by Scanning Tunneling Microscopy and Spectroscopy R Timm, M Hjort, O Persson, J Knutsson, S Lehmann, J Wallentin, ... ICPS 2012: 31st International Conference on the Physics of Semiconductors, 2012 | | 2012 |
