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Henry Hieslmair
Henry Hieslmair
DNV
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Titel
Zitiert von
Zitiert von
Jahr
Iron and its complexes in silicon
AA Istratov, H Hieslmair, ER Weber
Applied Physics A 69 (1), 13-44, 1999
7151999
Iron contamination in silicon technology
AA Istratov, H Hieslmair, ER Weber
Applied Physics A 70, 489-534, 2000
4682000
Intrinsic diffusion coefficient of interstitial copper in silicon
AA Istratov, C Flink, H Hieslmair, ER Weber, T Heiser
Physical review letters 81 (6), 1243, 1998
3061998
Gettering of metallic impurities in photovoltaic silicon
SA McHugo, H Hieslmair, ER Weber
Applied Physics A 64, 127-137, 1997
1471997
Electrical and recombination properties of copper‐silicide precipitates in silicon
AA Istratov, H Hedemann, M Seibt, OF Vyvenko, W Schröter, T Heiser, ...
Journal of The Electrochemical Society 145 (11), 3889, 1998
1421998
X-ray beam induced current—a synchrotron radiation based technique for the in situ analysis of recombination properties and chemical nature of metal clusters in …
OF Vyvenko, T Buonassisi, AA Istratov, H Hieslmair, AC Thompson, ...
Journal of Applied Physics 91 (6), 3614-3617, 2002
1112002
Diffusion, solubility and gettering of copper in silicon
AA Istratov, C Flink, H Hieslmair, SA McHugo, ER Weber
Materials Science and Engineering: B 72 (2-3), 99-104, 2000
992000
Solar cell structures, photovoltaic panels and corresponding processes
H Hieslmair
US Patent 8,853,527, 2014
942014
Out-diffusion and precipitation of copper in silicon: an electrostatic model
C Flink, H Feick, SA McHugo, W Seifert, H Hieslmair, T Heiser, AA Istratov, ...
Physical Review Letters 85 (23), 4900, 2000
882000
Silicon/germanium particle inks, doped particles, printing and processes for semiconductor applications
H Hieslmair, VK Dioumaev, S Chiruvolu, H Du
US Patent 8,632,702, 2014
842014
Dynamic design of solar cell structures, photovoltaic modules and corresponding processes
H Hieslmair
US Patent App. 12/070,381, 2008
772008
Gettering of iron by oxygen precipitates
H Hieslmair, AA Istratov, SA McHugo, C Flink, T Heiser, ER Weber
Applied Physics Letters 72 (12), 1460-1462, 1998
741998
Interstitial copper-related center in -type silicon
AA Istratov, H Hieslmair, C Flink, T Heiser, ER Weber
Applied physics letters 71 (16), 2349-2351, 1997
701997
Influence of interstitial copper on diffusion length and lifetime of minority carriers in -type silicon
AA Istratov, C Flink, H Hieslmair, T Heiser, ER Weber
Applied physics letters 71 (15), 2121-2123, 1997
661997
Gettering simulator: physical basis and algorithm
H Hieslmair, S Balasubramanian, AA Istratov, ER Weber
Semiconductor science and technology 16 (7), 567, 2001
642001
Transient ion drift detection of low level copper contamination in silicon
T Heiser, S McHugo, H Hieslmair, ER Weber
Applied physics letters 70 (26), 3576-3578, 1997
621997
Silicon/germanium oxide particle inks, inkjet printing and processes for doping semiconductor substrates
H Hieslmair, S Chiruvolu, H Du
US Patent 7,892,872, 2011
602011
The dissociation energy and the charge state of a copper-pair center in silicon
AA Istratov, H Hieslmair, T Heiser, C Flink, ER Weber
Applied physics letters 72 (4), 474-476, 1998
561998
High throughput ion-implantation for silicon solar cells
H Hieslmair, L Mandrell, I Latchford, M Chun, J Sullivan, B Adibi
Energy Procedia 27, 122-128, 2012
532012
Defect recognition and impurity detection techniques in crystalline silicon for solar cells
AA Istratov, H Hieslmair, OF Vyvenko, ER Weber, R Schindler
Solar energy materials and solar cells 72 (1-4), 441-451, 2002
522002
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