Folgen
Yoshio Honda
Yoshio Honda
Nagoya
Bestätigte E-Mail-Adresse bei nuee.nagoya-u.ac.jp
Titel
Zitiert von
Zitiert von
Jahr
Semiconductor device including an InGaAIN layer
N Sawaki, Y Honda, N Koide, K Furukawa
US Patent 6,635,901, 2003
162*2003
Growth of GaN free from cracks on a (111) Si substrate by selective metalorganic vapor-phase epitaxy
Y Honda, Y Kuroiwa, M Yamaguchi, N Sawaki
Applied physics letters 80 (2), 222-224, 2002
1602002
Correlation between dislocations and leakage current of pn diodes on a free-standing GaN substrate
S Usami, Y Ando, A Tanaka, K Nagamatsu, M Deki, M Kushimoto, S Nitta, ...
Applied Physics Letters 112 (18), 182106, 2018
1352018
Growth of (11̄01) GaN on a 7-degree off-oriented (0 0 1) Si substrate by selective MOVPE
Y Honda, N Kameshiro, M Yamaguchi, N Sawaki
Journal of crystal growth 242 (1-2), 82-86, 2002
1272002
Semiconductor light emitting device and method for producing the same
N Koide, J Yamamoto, T Dohkita, N Sawaki, Y Honda, Y Kuroiwa, ...
US Patent 6,806,115, 2004
126*2004
Growth and properties of semi-polar GaN on a patterned silicon substrate
N Sawaki, T Hikosaka, N Koide, S Tanaka, Y Honda, M Yamaguchi
Journal of Crystal Growth 311 (10), 2867-2874, 2009
1102009
AlGaN-based deep ultraviolet light-emitting diodes fabricated on patterned sapphire substrates
M Kim, T Fujita, S Fukahori, T Inazu, C Pernot, Y Nagasawa, A Hirano, ...
Applied physics express 4 (9), 092102, 2011
1012011
Progress and prospect of the growth of wide-band-gap group III nitrides: Development of the growth method for single-crystal bulk GaN
H Amano
Japanese Journal of Applied Physics 52 (5R), 050001, 2013
972013
Growth of semi‐polar (11‐22) GaN on a (113) Si substrate by selective MOVPE
T Tanikawa, T Hikosaka, Y Honda, M Yamaguchi, N Sawaki
physica status solidi c 5 (9), 2966-2968, 2008
952008
Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique
BO Jung, SY Bae, Y Kato, M Imura, DS Lee, Y Honda, H Amano
CrystEngComm 16 (11), 2273-2282, 2014
852014
Improvement of light extraction efficiency for AlGaN-based deep ultraviolet light-emitting diodes
T Inazu, S Fukahori, C Pernot, MH Kim, T Fujita, Y Nagasawa, A Hirano, ...
Japanese Journal of Applied Physics 50 (12R), 122101, 2011
802011
Optical and electrical properties of grown on a 7° off-axis (001)Si substrate
T Hikosaka, T Narita, Y Honda, M Yamaguchi, N Sawaki
Applied physics letters 84 (23), 4717-4719, 2004
802004
Selective area growth of GaN on Si substrate using SiO 2 mask by metalorganic vapor phase epitaxy
YKY Kawaguchi, YHY Honda, HMH Matsushima, MYM Yamaguchi, ...
Japanese journal of applied physics 37 (8B), L966, 1998
741998
Selective area growth of GaN microstructures on patterned (1 1 1) and (0 0 1) Si substrates
Y Honda, Y Kawaguchi, Y Ohtake, S Tanaka, M Yamaguchi, N Sawaki
Journal of crystal growth 230 (3-4), 346-350, 2001
682001
Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output
M Kaneda, C Pernot, Y Nagasawa, A Hirano, M Ippommatsu, Y Honda, ...
Japanese Journal of Applied Physics 56 (6), 061002, 2017
642017
Growth of non-polar (1 1 2¯ 0) GaN on a patterned (1 1 0) Si substrate by selective MOVPE
T Tanikawa, D Rudolph, T Hikosaka, Y Honda, M Yamaguchi, N Sawaki
Journal of Crystal Growth 310 (23), 4999-5002, 2008
562008
Reduction of efficiency droop in semipolar (1101) InGaN/GaN light emitting diodes grown on patterned silicon substrates
CH Chiu, DW Lin, CC Lin, ZY Li, WT Chang, HW Hsu, HC Kuo, TC Lu, ...
Applied physics express 4 (1), 012105, 2010
522010
Reduction of efficiency droop in semipolar (1101) InGaN/GaN light emitting diodes grown on patterned silicon substrates
CH Chiu, DW Lin, CC Lin, ZY Li, WT Chang, HW Hsu, HC Kuo, TC Lu, ...
Applied physics express 4 (1), 012105, 2010
522010
Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown
H Fukushima, S Usami, M Ogura, Y Ando, A Tanaka, M Deki, ...
Applied Physics Express 12 (2), 026502, 2019
512019
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
BO Jung, SY Bae, SY Kim, S Lee, JY Lee, DS Lee, Y Kato, Y Honda, ...
Nano Energy 11, 294-303, 2015
482015
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20