Juan B. Roldán
Juan B. Roldán
Department of Electronics and Computer Technology. Granada University (Spain)
Bestätigte E-Mail-Adresse bei ugr.es
Titel
Zitiert von
Zitiert von
Jahr
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
2332019
Surface roughness at the interfaces in fully depleted silicon-on-insulator inversion layers
F Gamiz, JB Roldan, JA Lopez-Villanueva, P Cartujo-Cassinello, ...
Journal of Applied Physics 86 (12), 6854-6863, 1999
1421999
Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET's
F Gámiz, JA López-Villanueva, JB Roldán, JE Carceller, P Cartujo
IEEE Transactions on Electron Devices 45 (5), 1122-1126, 1998
1001998
Modeling the centroid and the inversion charge in cylindrical surrounding gate MOSFETs, including quantum effects
JB Roldan, A Godoy, F Gamiz, M Balaguer
IEEE transactions on electron devices 55 (1), 411-416, 2007
912007
Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility
L Donetti, F Gámiz, JB Roldán, A Godoy
Journal of applied physics 100 (1), 013701, 2006
832006
Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates
F Gamiz, P Cartujo-Cassinello, JB Roldán, F Jiménez-Molinos
Journal of Applied Physics 92 (1), 288-295, 2002
822002
Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers
F Gamiz, JB Roldán, P Cartujo-Cassinello, JA López-Villanueva, ...
Journal of Applied Physics 89 (3), 1764-1770, 2001
792001
A Monte Carlo study on the electron‐transport properties of high‐performance strained‐Si on relaxed Si1−xGex channel MOSFETs
JB Roldán, F Gámiz, JA López‐Villanueva, JE Carceller
Journal of applied physics 80 (9), 5121-5128, 1996
701996
Modeling effects of electron-velocity overshoot in a MOSFET
JB Roldan, F Gamiz, JA Lopez-Villanueva, JE Carceller
IEEE Transactions on Electron Devices 44 (5), 841-846, 1997
641997
Simulation of thermal reset transitions in resistive switching memories including quantum effects
MA Villena, MB González, F Jiménez-Molinos, F Campabadal, JB Roldán, ...
Journal of Applied Physics 115 (21), 214504, 2014
622014
Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers
F Gamiz, JB Roldán, P Cartujo-Cassinello, JE Carceller, ...
Journal of applied physics 86 (11), 6269-6275, 1999
601999
An in-depth simulation study of thermal reset transitions in resistive switching memories
MA Villena, F Jiménez-Molinos, JB Roldán, J Suńé, S Long, X Lian, ...
Journal of Applied Physics 114 (14), 144505, 2013
572013
Scattering of electrons in silicon inversion layers by remote surface roughness
F Gamiz, JB Roldan
Journal of applied physics 94 (1), 392-399, 2003
502003
Monte Carlo simulation of remote-Coulomb-scattering-limited mobility in metal–oxide–semiconductor transistors
F Gámiz, JB Roldan, JE Carceller, P Cartujo
Applied physics letters 82 (19), 3251-3253, 2003
432003
An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs
MA Villena, MB González, JB Roldán, F Campabadal, F Jiménez-Molinos, ...
Solid-State Electronics 111, 47-51, 2015
392015
A SPICE Compact Model for Unipolar RRAM Reset Process Analysis
F Jimenez-Molinos, MA Villena, JB Roldan, AM Roldan
IEEE Transactions on Electron Devices, 2015
392015
Phonon-limited electron mobility in ultrathin silicon-on-insulator inversion layers
F Gámiz, JB Roldán, JA López-Villanueva
Journal of Applied Physics 83 (9), 4802-4806, 1998
391998
The dependence of the electron mobility on the longitudinal electric field in MOSFETs
JB Roldán, F Gámiz, JA López-Villanueva, JE Carceller, P Cartujo
Semiconductor science and technology 12 (3), 321, 1997
391997
A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs
S Aldana, P García-Fernández, A Rodríguez-Fernández, R Romero-Zaliz, ...
Journal of Physics D: Applied Physics 50 (33), 335103, 2017
382017
An Analytical Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects
JB Roldan, F Gamiz, F Jiménez-Molinos, C Sampedro, A Godoy, ...
IEEE transactions on electron devices 57 (11), 2925-2933, 2010
382010
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