| Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures K Uesugi, Y Hayashi, K Shojiki, H Miyake Applied Physics Express 12 (6), 065501, 2019 | 77 | 2019 |
| Suppression of dislocation-induced spiral hillocks in MOVPE-grown AlGaN on face-to-face annealed sputter-deposited AlN template K Uesugi, K Shojiki, Y Tezen, Y Hayashi, H Miyake Applied Physics Letters 116 (6), 2020 | 57 | 2020 |
| Low dislocation density AlN on sapphire prepared by double sputtering and annealing D Wang, K Uesugi, S Xiao, K Norimatsu, H Miyake Applied Physics Express 13 (9), 095501, 2020 | 41 | 2020 |
| Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams A Uedono, K Shojiki, K Uesugi, SF Chichibu, S Ishibashi, M Dickmann, ... Journal of Applied Physics 128 (8), 2020 | 38 | 2020 |
| Performance enhancement of blue light-emitting diodes with InGaN/GaN multi-quantum wells grown on Si substrates by inserting thin AlGaN interlayers S Kimura, H Yoshida, K Uesugi, T Ito, A Okada, S Nunoue Journal of Applied Physics 120 (11), 2016 | 31 | 2016 |
| High-quality AlN/sapphire templates prepared by thermal cycle annealing for high-performance ultraviolet light-emitting diodes D Wang, K Uesugi, S Xiao, K Norimatsu, H Miyake Applied Physics Express 14 (3), 035505, 2021 | 30 | 2021 |
| Quantitative evaluation of strain relaxation in annealed sputter-deposited AlN film S Tanaka, K Shojiki, K Uesugi, Y Hayashi, H Miyake Journal of Crystal Growth 512, 16-19, 2019 | 30 | 2019 |
| 263 nm wavelength UV-C LED on face-to-face annealed sputter-deposited AlN with low screw-and mixed-type dislocation densities K Uesugi, S Kuboya, K Shojiki, S Xiao, T Nakamura, M Kubo, H Miyake Applied Physics Express 15 (5), 055501, 2022 | 29 | 2022 |
| Impact of face-to-face annealed sputtered AlN on the optical properties of AlGaN multiple quantum wells K Shojiki, R Ishii, K Uesugi, M Funato, Y Kawakami, H Miyake AIP advances 9 (12), 2019 | 22 | 2019 |
| MOVPE growth of AlN films on nano-patterned sapphire substrates with annealed sputtered AlN Y Iba, K Shojiki, K Uesugi, S Xiao, H Miyake Journal of Crystal Growth 532, 125397, 2020 | 19 | 2020 |
| Fabrication of AlN templates by high-temperature face-to-face annealing for deep UV LEDs K Uesugi, H Miyake Japanese Journal of Applied Physics 60 (12), 120502, 2021 | 18 | 2021 |
| High‐Quality AlN Template Prepared by Face‐to‐Face Annealing of Sputtered AlN on Sapphire K Shojiki, K Uesugi, S Kuboya, T Inamori, S Kawabata, H Miyake physica status solidi (b) 258 (2), 2000352, 2021 | 18 | 2021 |
| Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing K Uesugi, Y Hayashi, K Shojiki, S Xiao, K Nagamatsu, H Yoshida, ... Journal of Crystal Growth 510, 13-17, 2019 | 15 | 2019 |
| Reduction of threading dislocation densities of N-polar face-to-face annealed sputtered AlN on sapphire K Shojiki, K Uesugi, S Kuboya, H Miyake Journal of Crystal Growth 574, 126309, 2021 | 14 | 2021 |
| Preparation of high-quality thick AlN layer on nanopatterned sapphire substrates with sputter-deposited annealed AlN film by hydride vapor-phase epitaxy S Xiao, N Jiang, K Shojiki, K Uesugi, H Miyake Japanese Journal of Applied Physics 58 (SC), SC1003, 2019 | 14 | 2019 |
| Crystalline quality improvement of face-to-face annealed MOVPE-grown AlN on vicinal sapphire substrate with sputtered nucleation layer S Kuboya, K Uesugi, K Shojiki, Y Tezen, K Norimatsu, H Miyake Journal of Crystal Growth 545, 125722, 2020 | 12 | 2020 |
| Local and anisotropic strain in AlN film on sapphire observed by Raman scattering spectroscopy K Shojiki, Y Hayashi, K Uesugi, H Miyake Japanese Journal of Applied Physics 58 (SC), SCCB17, 2019 | 12 | 2019 |
| Improved emission intensity of UVC-LEDs from using strain relaxation layer on sputter-annealed AlN K Nagamatsu, X Liu, K Uesugi, H Miyake Japanese Journal of Applied Physics 58 (SC), SCCC07, 2019 | 11 | 2019 |
| Extremely high internal quantum efficiency of AlGaN-based quantum wells on face-to-face annealed sputter-deposited AlN templates H Murotani, A Fujii, R Oshimura, T Kusaba, K Uesugi, H Miyake, ... Applied Physics Express 14 (12), 122004, 2021 | 10 | 2021 |
| Curvature-controllable and crack-free AlN/sapphire templates fabricated by sputtering and high-temperature annealing Y Hayashi, K Tanigawa, K Uesugi, K Shojiki, H Miyake Journal of Crystal Growth 512, 131-135, 2019 | 10 | 2019 |
