Tim Echtermeyer
Titel
Zitiert von
Zitiert von
Jahr
A graphene field-effect device
MC Lemme, TJ Echtermeyer, M Baus, H Kurz
IEEE Electron Device Letters 28 (4), 282-284, 2007
11782007
Strong plasmonic enhancement of photovoltage in graphene
TJ Echtermeyer, L Britnell, PK Jasnos, A Lombardo, RV Gorbachev, ...
Nature communications 2 (1), 1-5, 2011
8182011
Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO 2
V Geringer, M Liebmann, T Echtermeyer, S Runte, M Schmidt, ...
Physical review letters 102 (7), 076102, 2009
3852009
Non-volatile switching in graphene field effect devices
TJ Echtermeyer, MC Lemme, M Baus, BN Szafranek, AK Geim, H Kurz
IEEE Electron Device Letters 29 (8), 952-954, 2008
1932008
Synthesis of graphene on silicon dioxide by a solid carbon source
J Hofrichter, BN Szafranek, M Otto, TJ Echtermeyer, M Baus, A Majerus, ...
Nano letters 10 (1), 36-42, 2010
1692010
Photo-thermoelectric and photoelectric contributions to light detection in metal-graphene-metal photodetectors
TJ Echtermeyer, P Nene, M Trushin, RV Gorbachev, A Eiden, S Milana, ...
Nano Letters 14 (7), 3733–3742, 2014
1392014
Mobility in graphene double gate field effect transistors
MC Lemme, TJ Echtermeyer, M Baus, BN Szafranek, J Bolten, M Schmidt, ...
Solid-State Electronics 52 (4), 514-518, 2008
1332008
Surface plasmon polariton graphene photodetectors
TJ Echtermeyer, S Milana, U Sassi, A Eiden, M Wu, E Lidorikis, AC Ferrari
Nano Letters 16 (1), 8-20, 2016
1222016
Bistability and oscillatory motion of natural nanomembranes appearing within monolayer graphene on silicon dioxide
T Mashoff, M Pratzer, V Geringer, TJ Echtermeyer, MC Lemme, ...
Nano letters 10 (2), 461-465, 2010
1192010
Strong plasmonic enhancement of photovoltage in graphene Nat
TJ Echtermeyer, L Britnell, PK Jasnos, A Lombardo, RV Gorbachev, ...
Commun 2, 458, 2011
662011
Graphene field-effect devices
TJ Echtermeyer, MC Lemme, J Bolten, M Baus, M Ramsteiner, H Kurz
The European Physical Journal Special Topics 148 (1), 19-26, 2007
642007
0.86-nm CET Gate Stacks With EpitaxialHigh-Dielectrics and FUSI NiSi Metal Electrodes
HDB Gottlob, T Echtermeyer, M Schmidt, T Mollenhauer, JK Efavi, ...
IEEE electron device letters 27 (10), 814-816, 2006
542006
CMOS integration of epitaxial Gd2O3 high-k gate dielectrics
HDB Gottlob, T Echtermeyer, T Mollenhauer, JK Efavi, M Schmidt, ...
Solid-State Electronics 50 (6), 979-985, 2006
492006
Nonperturbative harmonic generation in graphene from intense midinfrared pulsed light
M Taucer, TJ Hammond, PB Corkum, G Vampa, C Couture, N Thiré, ...
Physical Review B 96 (19), 195420, 2017
372017
Electron-beam-induced direct etching of graphene
C Thiele, A Felten, TJ Echtermeyer, AC Ferrari, C Casiraghi, H Löhneysen, ...
Carbon 64, 84-91, 2013
362013
Towards substrate engineering of graphene–silicon Schottky diode photodetectors
H Selvi, N Unsuree, E Whittaker, MP Halsall, EW Hill, A Thomas, ...
Nanoscale 10 (7), 3399-3409, 2018
202018
Investigation of MOS capacitors and SOI–MOSFETs with epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) electrodes
T Echtermeyer, HDB Gottlob, T Wahlbrink, T Mollenhauer, M Schmidt, ...
Solid-State Electronics 51 (4), 617-621, 2007
182007
Complementary metal oxide semiconductor integration of epitaxial
MC Lemme, HDB Gottlob, TJ Echtermeyer, M Schmidt, H Kurz, R Endres, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
152009
Scalable gate first process for silicon on insulator metal oxide semiconductor field effect transistors with epitaxial high- dielectrics
HDB Gottlob, T Mollenhauer, T Wahlbrink, M Schmidt, T Echtermeyer, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006
142006
Graphene-based MIM diode and associated methods
A Colli, SA Awan, A Lombardo, TJ Echtermeyer, TS Kulmala, AC Ferrari
US Patent 9,202,945, 2015
132015
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