| Incipient ferroelectricity in Al‐doped HfO2 thin films S Mueller, J Mueller, A Singh, S Riedel, J Sundqvist, U Schroeder, ... Advanced Functional Materials 22 (11), 2412-2417, 2012 | 772 | 2012 |
| Ferroelectricity in yttrium-doped hafnium oxide J Müller, U Schröder, TS Böscke, I Müller, U Böttger, L Wilde, J Sundqvist, ... Journal of Applied Physics 110 (11), 2011 | 635 | 2011 |
| Ferroelectric Zr0. 5Hf0. 5O2 thin films for nonvolatile memory applications J Müller, TS Böscke, D Bräuhaus, U Schröder, U Böttger, J Sundqvist, ... Applied Physics Letters 99 (11), 2011 | 559 | 2011 |
| Method for forming a dielectric layer E Erben, S Kudelka, A Kersch, A Link, M Patz, J Sundqvist US Patent App. 11/970,654, 2008 | 448 | 2008 |
| Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG J Müller, E Yurchuk, T Schlösser, J Paul, R Hoffmann, S Müller, D Martin, ... 2012 symposium on VLSI technology (VLSIT), 25-26, 2012 | 295 | 2012 |
| Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films E Yurchuk, J Müller, S Knebel, J Sundqvist, AP Graham, T Melde, ... Thin Solid Films 533, 88-92, 2013 | 190 | 2013 |
| Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen K Kukli, M Ritala, J Sundqvist, J Aarik, J Lu, T Sajavaara, M Leskelä, ... Journal of Applied Physics 92 (10), 5698-5703, 2002 | 150 | 2002 |
| Ferroelectric deep trench capacitors based on Al:HfO2 for 3D nonvolatile memory applications P Polakowski, S Riedel, W Weinreich, M Rudolf, J Sundqvist, K Seidel, ... 2014 IEEE 6th International Memory Workshop (IMW), 1-4, 2014 | 118 | 2014 |
| Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD” E Ahvenniemi, AR Akbashev, S Ali, M Bechelany, M Berdova, S Boyadjiev, ... Journal of Vacuum Science & Technology A 35 (1), 2017 | 114 | 2017 |
| Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories E Yurchuk, S Mueller, D Martin, S Slesazeck, U Schroeder, T Mikolajick, ... 2014 IEEE International Reliability Physics Symposium, 2E. 5.1-2E. 5.5, 2014 | 114 | 2014 |
| Growth of SnO2 thin films by atomic layer deposition and chemical vapour deposition: A comparative study J Sundqvist, J Lu, M Ottosson, A Hårsta Thin Solid Films 514 (1-2), 63-68, 2006 | 113 | 2006 |
| Gas sensing properties of epitaxial SnO2 thin films prepared by atomic layer deposition A Rosental, A Tarre, A Gerst, J Sundqvist, A Hårsta, A Aidla, J Aarik, ... Sensors and Actuators B: Chemical 93 (1-3), 552-555, 2003 | 111 | 2003 |
| Selective deposition method T Boescke, A Saenger, S Jakschik, C Fachmann, M Patz, A Avellan, ... US Patent App. 11/729,360, 2008 | 91 | 2008 |
| Microstructure characterisation of ALD-grown epitaxial SnO2 thin films J Lu, J Sundqvist, M Ottosson, A Tarre, A Rosental, J Aarik, A Hårsta Journal of crystal growth 260 (1-2), 191-200, 2004 | 85 | 2004 |
| Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films K Kukli, J Aarik, M Ritala, T Uustare, T Sajavaara, J Lu, J Sundqvist, ... Journal of applied physics 96 (9), 5298-5307, 2004 | 82 | 2004 |
| Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress P Lagger, P Steinschifter, M Reiner, M Stadtmüller, G Denifl, A Naumann, ... Applied Physics Letters 105 (3), 2014 | 81 | 2014 |
| Atomic layer deposition of ruthenium films from (ethylcyclopentadienyl)(pyrrolyl) ruthenium and oxygen K Kukli, M Kemell, E Puukilainen, J Aarik, A Aidla, T Sajavaara, M Laitinen, ... Journal of The Electrochemical Society 158 (3), D158, 2011 | 72 | 2011 |
| Conformity and structure of titanium oxide films grown by atomic layer deposition on silicon substrates I Jõgi, M Pärs, J Aarik, A Aidla, M Laan, J Sundqvist, L Oberbeck, ... Thin Solid Films 516 (15), 4855-4862, 2008 | 67 | 2008 |
| Atomic layer deposition of tantalum oxide thin films from iodide precursor K Kukli, J Aarik, A Aidla, K Forsgren, J Sundqvist, A Hårsta, T Uustare, ... Chemistry of materials 13 (1), 122-128, 2000 | 61 | 2000 |
| Detailed leakage current analysis of metal–insulator–metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO2/Al2O3/ZrO2 as dielectric and TiN electrodes W Weinreich, A Shariq, K Seidel, J Sundqvist, A Paskaleva, M Lemberger, ... Journal of Vacuum Science & Technology B 31 (1), 2013 | 60 | 2013 |
