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Jiyoung Kim
Jiyoung Kim
Professor, Department of Materials Science and Engineering, University of Texas at Dallas
Verified email at utdallas.edu - Homepage
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Cited by
Cited by
Year
GaAs interfacial self-cleaning by atomic layer deposition
CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ...
Applied Physics Letters 92 (7), 2008
4922008
Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure
A Azcatl, X Qin, A Prakash, C Zhang, L Cheng, Q Wang, N Lu, MJ Kim, ...
Nano letters 16 (9), 5437-5443, 2016
4212016
Template-directed synthesis of oxide nanotubes: fabrication, characterization, and applications
C Bae, H Yoo, S Kim, K Lee, J Kim, MM Sung, H Shin
Chemistry of Materials 20 (3), 756-767, 2008
3722008
Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics
B Lee, SY Park, HC Kim, KJ Cho, EM Vogel, MJ Kim, RM Wallace, J Kim
Applied Physics Letters 92 (20), 2008
3652008
Metal Contacts on Physical Vapor Deposited Monolayer MoS2
C Gong, C Huang, J Miller, L Cheng, Y Hao, D Cobden, J Kim, RS Ruoff, ...
ACS nano 7 (12), 11350-11357, 2013
3552013
Formation of TiO2 and ZrO2 Nanotubes Using Atomic Layer Deposition with Ultraprecise Control of the Wall Thickness
H Shin, DK Jeong, J Lee, MM Sung, J Kim
Advanced Materials 16 (14), 1197-1200, 2004
3412004
HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability
S McDonnell, B Brennan, A Azcatl, N Lu, H Dong, C Buie, J Kim, ...
ACS nano 7 (11), 10354-10361, 2013
3272013
Large ferroelectric polarization of TiN/Hf0. 5Zr0. 5O2/TiN capacitors due to stress-induced crystallization at low thermal budget
SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, HS Kim, YC Byun, ...
Applied Physics Letters 111 (24), 2017
3092017
Ferroelectric thin Hf0.5Zr05O2 films: a review of recent advance
SJ Kim, J Mohan, SR Summerfelt, J Kim
JOM 71 (1), 246, 2019
300*2019
Large-Area Deposition of MoS2 by pulsed laser deposition with in situ thickness control
MI Serna, SH Yoo, S Moreno, Y Xi, JP Oviedo, H Choi, HN Alshareef, ...
ACS Nano 10 (6), 6054-6061, 2016
2612016
HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy
R Yue, AT Barton, H Zhu, A Azcatl, LF Pena, J Wang, X Peng, N Lu, ...
ACS nano 9 (1), 474-480, 2015
2512015
MoS2 functionalization for ultra-thin atomic layer deposited dielectrics
A Azcatl, S McDonnell, S KC, X Peng, H Dong, X Qin, R Addou, GI Mordi, ...
Applied Physics Letters 104 (11), 2014
2352014
Ozone adsorption on graphene: ab initio study and experimental validation
G Lee, B Lee, J Kim, K Cho
The Journal of Physical Chemistry C 113 (32), 14225-14229, 2009
2222009
Half-cycle atomic layer deposition reaction studies of on (100) surfaces
M Milojevic, FS Aguirre-Tostado, CL Hinkle, HC Kim, EM Vogel, J Kim, ...
Applied Physics Letters 93 (20), 202902, 2008
1912008
Remote Plasma Oxidation and Atomic Layer Etching of MoS2
H Zhu, X Qin, L Cheng, A Azcatl, J Kim, RM Wallace
ACS Applied Materials & Interfaces 8 (29), 19119-19126, 2016
1902016
Schottky barrier height engineering for electrical contacts of multilayered MoS2 transistors with reduction of metal induced gate states
GS Kim, SH Kim, J Park, K Han, J Kim, HY Yu
ACS Nano 12 (6), 6292, 2018
1772018
Comparison of the sputter rates of oxide films relative to the sputter rate of
DR Baer, MH Engelhard, AS Lea, P Nachimuthu, TC Droubay, J Kim, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 28 (5 …, 2010
1642010
Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozone
S Jandhyala, G Mordi, B Lee, G Lee, C Floresca, PR Cha, J Ahn, ...
ACS nano 6 (3), 2722-2730, 2012
1612012
Defects and Surface Structural Stability of MoTe2 Under Vacuum Annealing
H Zhu, Q Wang, L Cheng, R Addou, J Kim, MJ Kim, RM Wallace
Acs Nano 11 (11), 11005-11014, 2017
1572017
Nucleation and growth of WSe2: enabling large grain transition metal dichalcogenides
R Yue, Y Nie, LA Walsh, R Addou, C Liang, N Lu, AT Barton, H Zhu, ...
2D Materials 4 (4), 045019, 2017
1522017
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